公开(公告)号：EP0680072A3

公开(公告)日：1998-12-09

申请号：EP95302801

申请日：1995-04-26

申请人： APPLIED MATERIALS INC

发明人： SAHIN TURGUT ,  REDEKER FRED C ,  NOWAK ROMUALD ,  LI SHIJIAN ,  DYER TIMOTHY ,  WITTY DEREK R

IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  H01J37/32082

摘要： The disclosure relates to a method of cleaning a plasma reactor by creating a vacuum in the chamber (10) while introducing an etchant gas into the chamber through the gas injection ports (14), and applying RF energy to a ceiling electrode (24) in the chamber while not necessarily applying RF energy to the coil antenna (26), so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactor's coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber. In yet another embodiment the method includes performing chemical vapor deposition on a wafer by introducing a deposition precursor gas into the chamber while maintaining an inductively coupled plasma therein by applying RF power to the coil antenna while grounding the ceiling electrode, and cleaning the reactor by introducing a precursor cleaning gas into the chamber while maintaining a capacitively coupled plasma in the chamber by applying RF power to the ceiling electrode.