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    A method of operating a high density plasma CVD reactor with combined inductive and capacitive coupling.
    1.
    发明公开
    A method of operating a high density plasma CVD reactor with combined inductive and capacitive coupling. 失效
    用在组合电感和电容耦合操作CVD反应器高的等离子体的光的方法。

    公开(公告)号：EP0680072A3

    公开(公告)日：1998-12-09

    申请号：EP95302801

    申请日：1995-04-26

    申请人： APPLIED MATERIALS INC

    发明人： SAHIN TURGUT ,  REDEKER FRED C ,  NOWAK ROMUALD ,  LI SHIJIAN ,  DYER TIMOTHY ,  WITTY DEREK R

    IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

    CPC分类号： H01J37/32862 ,  C23C16/4405 ,  H01J37/32082

    摘要： The disclosure relates to a method of cleaning a plasma reactor by creating a vacuum in the chamber (10) while introducing an etchant gas into the chamber through the gas injection ports (14), and applying RF energy to a ceiling electrode (24) in the chamber while not necessarily applying RF energy to the coil antenna (26), so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactor's coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber. In yet another embodiment the method includes performing chemical vapor deposition on a wafer by introducing a deposition precursor gas into the chamber while maintaining an inductively coupled plasma therein by applying RF power to the coil antenna while grounding the ceiling electrode, and cleaning the reactor by introducing a precursor cleaning gas into the chamber while maintaining a capacitively coupled plasma in the chamber by applying RF power to the ceiling electrode.

    Substrate support
    3.
    发明公开
    Substrate support 失效
    Substratträger

    公开(公告)号：EP0803904A3

    公开(公告)日：1998-09-30

    申请号：EP97106583

    申请日：1997-04-21

    申请人： APPLIED MATERIALS INC

    发明人： LUE BRIAN ,  REDEKER FRED C ,  ISHIKAWA TETSUYA ,  WONG MANUS ,  LI SHIJIAN

    IPC分类号： H01L21/302 ,  G03F7/20 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/68

    CPC分类号： H01L21/6875 ,  G03F7/707 ,  G03F7/70708 ,  H01L21/6833

    摘要： Substrate support (64) is provided with multiple pressure zones (68,70) on its surface. A seal area (72) is provided between the different zones to allow different gas pressures in the two zones. A higher gas pressure is provided to a zone (70) corresponding to an area of the substrate where greater heat transfer is desired. The gap between the substrate support and the gas pressure is selected to provide the desired amount of heat transfer. Another aspect is a limited substrate contact using protrusions (66), to maximize heat transfer gas flow. A closed loop control system varies the heat transfer gas pressure in accordance with a temperature sensor. For an electrostatic chuck (64), the dielectric thickness (86) is varied to give a higher electrostatic force at the periphery (94) of the substrate (82).

    摘要翻译： 改进的衬底支撑件在其表面上设置有多个压力区域。 在不同区域之间设置密封区域，以允许两个区域中的不同气体压力。 更高的气体压力被提供给对应于期望更大热传递的基底的区域的区域。 选择衬底支撑件和气体压力之间的间隙以提供所需量的热传递。 另一方面是使用突起的有限的衬底接触，以使热传递气流最大化。 闭环控制系统根据温度传感器改变传热气体压力。 对于静电卡盘，电介质厚度是变化的，以在衬底的周围产生更高的静电力。