公开(公告)号：EP1258909A2

公开(公告)日：2002-11-20

申请号：EP02076864.4

申请日：2002-05-13

申请人： ASM INTERNATIONAL N.V.

发明人： Storm, Arjen ,  Bast, Ronald ,  Kuznetsov, Vladimir Ivanovich ,  Zinger, Jan

IPC分类号： H01L21/00

CPC分类号： H01L21/00 ,  H01L21/67109

摘要： Method and device for the heat treatment of flat substrates, wherein the substrates are positioned in the vicinity of a heated, essentially flat furnace body extending over the surface of the substrate. In order to provide a reproducible treatment when treating a number of substrates successively, the temperature of the furnace body is measured so close to the surface adjacent to the substrate that the withdrawal of heat from the furnace body by the substrate can be detected. The introduction of each substrate takes place at a point in time when the temperature measured in this way is, within certain limits, equal to a desired initial treatment temperature T trig .

摘要翻译： 用于平面基板的热处理的方法和装置，其中基板位于在衬底的表面上延伸的加热的基本平坦的炉体附近。 为了在连续处理多个基板时提供可再现的处理，炉体的温度被测量为与基板相邻的表面接近，可以检测到通过基板取出炉体的热量。 每个衬底的引入在这样测量的温度在一定限度内等于期望的初始处理温度T trig的时间点发生。

公开(公告)号：EP1258909B1

公开(公告)日：2008-07-30

申请号：EP02076864.4

申请日：2002-05-13

申请人： ASM INTERNATIONAL N.V.

发明人： Storm, Arjen ,  Bast, Ronald ,  Kuznetsov, Vladimir Ivanovich ,  Zinger, Jan

IPC分类号： H01L21/00

CPC分类号： H01L21/00 ,  H01L21/67109

公开(公告)号：EP1111658B1

公开(公告)日：2006-12-13

申请号：EP00204696.9

申请日：2000-12-22

申请人： ASM INTERNATIONAL N.V.

发明人： Snijders, Gert-Jan ,  de Ridder, Christianus Gerardus Maria ,  Kuznetsov, Vladimir Ivanovich ,  Terhorst, Herbert

IPC分类号： H01L21/00

CPC分类号： H01L21/67017 ,  H01L21/67109 ,  H01L21/6838

公开(公告)号：EP1258909A3

公开(公告)日：2006-04-12

申请号：EP02076864.4

申请日：2002-05-13

申请人： ASM INTERNATIONAL N.V.

发明人： Storm, Arjen ,  Bast, Ronald ,  Kuznetsov, Vladimir Ivanovich ,  Zinger, Jan

IPC分类号： H01L21/00

CPC分类号： H01L21/00 ,  H01L21/67109

摘要： Method and device for the heat treatment of flat substrates, wherein the substrates are positioned in the vicinity of a heated, essentially flat furnace body extending over the surface of the substrate. In order to provide a reproducible treatment when treating a number of substrates successively, the temperature of the furnace body is measured so close to the surface adjacent to the substrate that the withdrawal of heat from the furnace body by the substrate can be detected. The introduction of each substrate takes place at a point in time when the temperature measured in this way is, within certain limits, equal to a desired initial treatment temperature T trig .

公开(公告)号：EP1111658A1

公开(公告)日：2001-06-27

申请号：EP00204696.9

申请日：2000-12-22

申请人： ASM INTERNATIONAL N.V.

发明人： Snijders, Gert-Jan ,  de Ridder, Christianus Gerardus Maria ,  Kuznetsov, Vladimir Ivanovich ,  Terhorst, Herbert

IPC分类号： H01L21/00

CPC分类号： H01L21/67017 ,  H01L21/67109 ,  H01L21/6838

摘要： An apparatus for treating a wafer manufactured from semiconducting material, the apparatus comprising a first and a second housing part arranged for movement away from and towards each other, the two housing parts bounding a treatment chamber, while around the treatment chamber there is provided a first groove connected to gas discharge means, while in at least one of the two boundary surfaces there is provided a second groove connected to gas feed means, the first groove being located radially within the second groove, and, in use, the pressure created by the gas feed means being such that from the second groove, gas flows both in radial inward and in radial outward direction in the gap between the first and the second boundary surface.

摘要翻译： 一种用于处理由半导体材料制造的晶片的设备，该设备包括布置成彼此远离并朝向彼此移动的第一和第二壳体部分，两个壳体部分包围处理室，而在处理室周围设置有第一 沟槽连接到气体排出装置，而在两个边界表面中的至少一个中设置有连接到气体供给装置的第二凹槽，第一凹槽径向位于第二凹槽内，并且在使用中由 气体供给装置使得从第二凹槽，气体在第一和第二边界表面之间的间隙中径向向内和径向向外的方向流动。