公开(公告)号：EP0585084B1

公开(公告)日：1998-11-04

申请号：EP93306631.8

申请日：1993-08-20

申请人： AT&T Corp.

发明人： Bacon, Donald Dingley ,  Katz, Avishay ,  Lee, Chien-Hsun ,  Tai, King Lien ,  Wong, Yiu-Man

IPC分类号： H01L23/492 ,  H01L21/58 ,  H01L21/60

CPC分类号： H01L24/83 ,  B23K20/023 ,  B23K20/233 ,  B23K35/001 ,  B23K2035/008 ,  H01L23/3732 ,  H01L24/29 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/04026 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32014 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/157 ,  H01S5/022 ,  H01S5/02272 ,  H01S5/02484 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/0133 ,  H01L2924/00015

公开(公告)号：EP0585084A1

公开(公告)日：1994-03-02

申请号：EP93306631.8

申请日：1993-08-20

申请人： AT&T Corp.

发明人： Bacon, Donald Dingley ,  Katz, Avishay ,  Lee, Chien-Hsun ,  Tai, King Lien ,  Wong, Yiu-Man

IPC分类号： H01L23/492 ,  H01L21/58 ,  H01L21/60

CPC分类号： H01L24/83 ,  B23K20/023 ,  B23K20/233 ,  B23K35/001 ,  B23K2035/008 ,  H01L23/3732 ,  H01L24/29 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/04026 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32014 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/157 ,  H01S5/022 ,  H01S5/02272 ,  H01S5/02484 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/0133 ,  H01L2924/00015

摘要： A laser device is bonded to a diamond submount (20) by means of a procedure including (1) codepositing an auxiliary layer (22), on a layer of barrier metal (21) that has been deposited overlying the submount, followed by (2) depositing a wetting layer (23) on the auxiliary layer, and (3) by depositing a solder layer (24) comprising alternating metallic layers, preferably of gold and tin sufficient to form an overall tin-rich gold-tin eutectic composition. The barrier metal is typically W, Mo, Cr, or Ru. Prior to bonding, a conventional metallization such as Ti-Pt-Au (three layers) is deposited on the laser device's bottom ohmic contact, typically comprising Ge. Then, during bonding, the solder layer is brought into physical contact with the laser device's metallization under enough heat and pressure, followed by cooling, to form a permanent joint between them. The thickness of the solder layer is advantageously less than approximately 5 µm. The wetting layer is preferably the intermetallic compound Ni₃Sn₄, and the auxiliary layer is formed by codepositing the metallic components of this intermetallic together with the barrier metal.

摘要翻译： 通过包括（1）共沉积辅助层（22）的方法将激光装置结合到金刚石基座（20）上，所述方法包括在已经沉积在所述基座上的阻挡金属层（21）上，其后是（2 在所述辅助层上沉积润湿层（23），以及（3）通过沉积包含交替的金属层（优选为金和锡）的焊料层（24），其足以形成总体富锡金锡共晶组合物。 阻挡金属通常是W，Mo，Cr或Ru。 在接合之前，常规的金属化例如Ti-Pt-Au（三层）沉积在激光器的底部欧姆接触件上，通常包括Ge。 然后，在接合期间，焊料层在足够的热和压力下与激光器件的金属化物理接触，随后冷却，以在它们之间形成永久接合。 焊料层的厚度有利地小于约5μm。 润湿层优选为金属间化合物Ni3Sn4，并且辅助层通过与阻挡金属一起共沉积该金属间化合物的金属成分而形成。