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    NON-EUTECTIC BONDING METHOD WITH FORMATION OF A SOLID SOLUTION WITH A POROUS STRUCTURE WITH A SECOND PHASE DISPERSED THEREIN AND CORRESPONDING JOINT
    1.
    发明公开
    NON-EUTECTIC BONDING METHOD WITH FORMATION OF A SOLID SOLUTION WITH A POROUS STRUCTURE WITH A SECOND PHASE DISPERSED THEREIN AND CORRESPONDING JOINT 审中-公开
    形成具有第二相分散和多孔结构的多孔结构的固体溶液的非共晶粘合方法

    公开(公告)号：EP3226282A1

    公开(公告)日：2017-10-04

    申请号：EP16163263.3

    申请日：2016-03-31

    申请人： Techni Holding AS

    发明人： LARSSON, Andreas ,  TOLLEFSEN, Torleif A.

    IPC分类号： H01L21/58 ,  H05K3/34 ,  B23K20/02 ,  B23K20/233 ,  B23K35/26 ,  B23K35/30

    CPC分类号： B23K20/02 ,  B23K20/026 ,  B23K20/233 ,  B23K35/26 ,  B23K35/3013 ,  C22C5/00 ,  C22C19/00 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05155 ,  H01L2224/05187 ,  H01L2224/05644 ,  H01L2224/27462 ,  H01L2224/29109 ,  H01L2224/29144 ,  H01L2224/3201 ,  H01L2224/32503 ,  H01L2224/83075 ,  H01L2224/8309 ,  H01L2224/83101 ,  H01L2224/83203 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83948 ,  H01L2224/92 ,  H01L2224/94 ,  H05K3/34 ,  H01L2924/01032 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/048 ,  H01L2924/01028 ,  H01L2224/05144 ,  H01L2924/01015 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/27 ,  H01L21/78 ,  H01L2224/83

    摘要： The present invention relates to a method of forming a joint (25) bonding together two solid objects (20, 22) and a joint (25) made by the method, where the joint (25) is formed by a layer (24) of a binary system of components A and B which upon heat treatment forms a porous, coherent and continuous single-phased solid-solution of the components A and B extending across a bonding layer of the joint (25) and a second phase of the components A and B dispersed in the porous, coherent and continuous single-phased solid-solution structure. Components A and B may be fully miscible in the solid state. Alternatively, the binary system of components A and B may be a partly miscible eutectic system. The first and second solid objects (20, 22) may be any physical objects which are to be bonded together, i.e. materials such as e.g. Si, SiC, GaAs, GaN, SOI, Alumina, AIN, Si3N4, glass, Kovar, Cu, Al, etc. and/or components such as e.g. MEMS, transistors, substrates, resistances, condensers, ICs, diodes, etc.
    The present invention has the advantages of enabling forming the bond (25) at a relatively low process temperature which may be less than the intended operation temperature of the bond (25) and also of partly remelting the bonding layer (25) if the operation temperature becomes higher than the solidus temperature. The partly remelting of the bond layer (25) according to the invention is believed to provide an advantage of releasing thermal stresses in the bond (25), possible recovery of zones with significant defect concentrations at grain boundaries, and probably also reducing the occurrence of a detrimental Kirkendall voiding effect between the bonded components (20, 22). Thus the joints (25) according to the present invention are believed to be more resilient when exposed to thermal loads such as cycling and high temperature operation, especially when the thermal cycling involves temperatures above the solidus temperature. Another benefit of the joint (25) according to the invention is that it avoids fragile intermetallic compounds.

    摘要翻译： 本发明涉及一种形成将两个固体物体（20,22）和通过该方法制造的接头（25）接合在一起的接头（25）的方法，其中接头（25）由 组分A和组分B的二元体系，其在热处理时形成组分A和组分B的多孔的，连贯的和连续的单相固体溶液，组分A和组分B延伸穿过接头（25）的粘结层并且组分A 和B分散在多孔，连贯和连续的单相固溶体结构中。 组分A和B可以在固态下完全混溶。 或者，组分A和B的二元体系可以是部分可混溶的共晶体系。 第一和第二固体物体（20,22）可以是要粘合在一起的任何物理物体，例如， Si，SiC，GaAs，GaN，SOI，氧化铝，AlN，Si 3 N 4，玻璃，可伐合金，Cu，Al等和/或例如 MEMS，晶体管，衬底，电阻，电容器，IC，二极管等。本发明具有能够在相对低的工艺温度下形成结合部（25）的优点，所述工艺温度可以低于结合部 ），并且如果操作温度变得高于固相线温度，则部分重熔接合层（25）。 相信根据本发明的粘结层（25）的部分重熔提供了释放粘结（25）中的热应力的优点，可能恢复晶界处具有显着缺陷浓度的区域，并且还可能减少 粘合组件之间的有害Kirkendall空洞效应（20,22）。 因此，当暴露于热负荷如循环和高温操作时，尤其是当热循环涉及高于固相线温度的温度时，据信本发明的接头（25）更具有弹性。 根据本发明的接头（25）的另一个益处在于它避免了脆弱的金属间化合物。