公开(公告)号：EP1552547A4

公开(公告)日：2008-09-24

申请号：EP03765671

申请日：2003-07-18

申请人： AVIZA TECH INC

发明人： YOSHIHIDE SENZAKI

IPC分类号： H01L27/04 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/20

CPC分类号： H01L21/28562 ,  C23C16/308 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45529 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40 ,  H01L28/60

摘要： The invention describes an in-situ method of fabricating a metal insulator metal (MIM) capacitor and products formed by the same. The method utilizes atomic layer deposition (ALD) or metal-organic chemical vapor deposition (MOCVD). In the method, a metal precursor is sequentially reacted with a nitrogen source, oxidant, and then a nitrogen source again. Reaction with the nitrogen source generates the outermost conductive metal nitride (MN) layers (121). Reaction with the oxidant generates an inner dielectric metal oxide (MOx) layer (110). Alternatively, or in addition, the metal precursor can be reacted with a mixture of oxidant and nitrogen source to generate inner dielectric layer(s) (231, 232, 310) of metal oxynitride (MOxNy). Because the same metal is used throughout the capacitor, the layers in the MIM capacitor exhibits excellent compatibility and stability.