公开(公告)号：EP1186053A2

公开(公告)日：2002-03-13

申请号：EP00928059.5

申请日：2000-04-20

申请人： Acreo AB

发明人： KONSTANTINOV, Andrei ,  HARRIS, Christopher ,  SAVAGE, Susan

IPC分类号： H01L29/78 ,  H01L29/24 ,  H01L21/336

CPC分类号： H01L29/0847 ,  G01N27/4143 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7828 ,  H01L29/7838

摘要： A field effect transistor of SiC for high temperature application has the source region layer (4), the drain region layer (5) and the channel region layer (6, 7) vertically separated from a front surface (14), where a gate electrode (12) is arranged, for reducing the electric field at said surface in operation of the transistor and in the case of operation as a gas sensor permitting all electrodes except for the gate electrode to be protected from the atmosphere.