公开(公告)号：EP1163696A1

公开(公告)日：2001-12-19

申请号：EP00906825.5

申请日：2000-02-01

申请人： Acreo AB

发明人： HARRIS, Christopher ,  KONSTANTINOV, Andrei

IPC分类号： H01L21/335 ,  H01L29/772 ,  H01L29/24

摘要： A lateral field effected transistor of SiC for high switching frequencies comprises a source region layer (5) and a drain region layer (6) laterally spaced and highly doped n-type, an n-type channel layer (4) extending laterally and interconnecting the source region layer and the drain region layer for conducting a current between these layers in the on-state of the transistor, and a gate electrode (9) arranged to control the channel layer to be conducting or blocking through varying the potential applied to the gate electrode. A highly doped p-type base layer (12) is arranged next to the channel layer at least partially overlapping the gate electrode and being at a lateral distance to the drain region layer. The base layer is shorted to the source region layer.

公开(公告)号：EP1258034A1

公开(公告)日：2002-11-20

申请号：EP01902922.2

申请日：2001-01-26

申请人： Acreo AB

发明人： HARRIS, Christopher ,  KONSTANTINOV, Andrei ,  ADAS, Christian ,  KARLSSON, Stefan ,  HÖRMAN, Thomas

IPC分类号： H01L21/3063 ,  B81C1/00 ,  H01L41/22

CPC分类号： B81C1/00539 ,  B81C2201/0114 ,  B81C2201/0139 ,  H01L21/0475

摘要： The invention relates to a method for selective etching of SiC, the etching being carried out by applying a positive potential to a layer (3; 8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC. The invention also relates to a method for producing a SiC micro structure having free hanging parts (i.e. diaphragm, cantilever or beam) on a SiC-substrate, a method for producing a MEMS device of SiC having a free hanging structure, and a method for producing a piezo-resistive pressure sensor comprising the step of applying a positive potential to a layer (8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC.

公开(公告)号：EP1186053A2

公开(公告)日：2002-03-13

申请号：EP00928059.5

申请日：2000-04-20

申请人： Acreo AB

发明人： KONSTANTINOV, Andrei ,  HARRIS, Christopher ,  SAVAGE, Susan

IPC分类号： H01L29/78 ,  H01L29/24 ,  H01L21/336

CPC分类号： H01L29/0847 ,  G01N27/4143 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7828 ,  H01L29/7838

摘要： A field effect transistor of SiC for high temperature application has the source region layer (4), the drain region layer (5) and the channel region layer (6, 7) vertically separated from a front surface (14), where a gate electrode (12) is arranged, for reducing the electric field at said surface in operation of the transistor and in the case of operation as a gas sensor permitting all electrodes except for the gate electrode to be protected from the atmosphere.