VORRICHTUNG UND VERFAHREN ZUR CHEMISCHEN GASPHASENABSCHEIDUNG MIT HOHEM DURCHSATZ
    1.
    发明公开
    VORRICHTUNG UND VERFAHREN ZUR CHEMISCHEN GASPHASENABSCHEIDUNG MIT HOHEM DURCHSATZ 有权
    DEVICE AND METHOD FOR化学气相沉积的高通量

    公开(公告)号:EP1774057A1

    公开(公告)日:2007-04-18

    申请号:EP05762972.7

    申请日:2005-07-01

    申请人: Aixtron AG

    IPC分类号: C23C16/54

    摘要: The invention relates to a device for depositing at least one especially thin layer onto at least one substrate (9). Said device comprises a process chamber (1, 20, 11, 11', 40, 21), housed in a reactor housing (2) and comprising a movable susceptor (20) which carries the at least one substrate (9). A plurality of gas feed lines (24) run into said process chamber and feed different process gases which comprise coat-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the coat-forming components onto the substrate (9). In order to increase the throughput of said method, the process chamber is provided with a plurality of separate deposition chambers (11, 11') into which different gas feed lines (24, 24') run, thereby feeding individual gas compositions. The substrate (9) can be fed to said chambers one after the other by moving the susceptor (20) and depositing different layers or layer components.

    VERFAHREN UND VORRICHTUNG ZUR DOSIERTEN ABGABE KLEINER FLÜSSIGKEITSVOLUMENSTRÖME
    4.
    发明授权
    VERFAHREN UND VORRICHTUNG ZUR DOSIERTEN ABGABE KLEINER FLÜSSIGKEITSVOLUMENSTRÖME 有权
    方法和设备的液体低体积流量的计量输送

    公开(公告)号:EP1358364B1

    公开(公告)日:2004-07-21

    申请号:EP01989461.7

    申请日:2001-11-10

    申请人: Aixtron AG

    摘要: The invention relates to a method for the metered delivery of low volumetric flows by the introduction of a gaseous stream into a tank containing a liquid and the displacement of the liquid through a liquid conduit. To improve said method, a partial gaseous stream (Q2) is diverted from a mass-flow controlled gaseous stream (Q1), at a pressure (P1) that is maintained at a constant level and that essentially corresponds to the gaseous pressure (P2) in the tank (4), and is guided into said tank to displace the liquid, the mass flow of the partial gaseous stream (2) being measured. A variation in the pressure (P1) allows a partial gaseous mass-flow to be set, whose volumetric flow, determined by taking into consideration the gas density (Q1), corresponds to the desired value for the liquid volumetric flow (Q3).

    VERFAHREN UND VORRICHTUNG ZUM ABSCHEIDEN EINES IN FLÜSSIGER FORM VORLIEGENDEN PREKURSORS AUF EINEM SUBSTRAT
    6.
    发明授权
    VERFAHREN UND VORRICHTUNG ZUM ABSCHEIDEN EINES IN FLÜSSIGER FORM VORLIEGENDEN PREKURSORS AUF EINEM SUBSTRAT 有权
    方法和设备对该前驱物在衬底上的液状分离

    公开(公告)号:EP1252362B1

    公开(公告)日:2004-01-02

    申请号:EP01946907.1

    申请日:2001-01-29

    申请人: Aixtron AG

    IPC分类号: C23C16/448 H01L21/00

    CPC分类号: C23C16/4485

    摘要: Disclosed is a device for depositing at least one precursor (6') on at least one substrate, said precursor being present in the liquid or dissolved form. The inventive device comprises at least one storage container (6) for the individual or mixed precursor/s and a reaction chamber (1), wherein the substrate/s is/are arranged. The aim of the invention is to mount the layers on said substrate/s. The inventive device also comprises a conveying device (8) that conveys the precursor/s from the storage container/s to the area by means of at least one line, whereby the precursor/s are vaporised in said area. Said device further comprises a control unit which controls the conveying device (8). The invention is characterised in that a sensor unit (41, 42) is provided which detects the amount of the supplied precursors and has an output signal that is applied to the control unit as a real signal. The control unit controls the conveying device in such a way that the mass flow pertaining to the precursors has a value over a certain period, whereby the mean of said mass flow is taken and said value can be pre-determined.

    VERFAHREN UND VORRICHTUNG ZUR DOSIERTEN ABGABE KLEINER FLÜSSIGKEITSVOLUMENSTRÖME
    7.
    发明公开
    VERFAHREN UND VORRICHTUNG ZUR DOSIERTEN ABGABE KLEINER FLÜSSIGKEITSVOLUMENSTRÖME 有权
    方法和设备的液体低体积流量的计量输送

    公开(公告)号:EP1358364A2

    公开(公告)日:2003-11-05

    申请号:EP01989461.7

    申请日:2001-11-10

    申请人: Aixtron AG

    摘要: The invention relates to a method for the metered delivery of low volumetric flows by the introduction of a gaseous stream into a tank containing a liquid and the displacement of the liquid through a liquid conduit. To improve said method, a partial gaseous stream (Q2) is diverted from a mass-flow controlled gaseous stream (Q1), at a pressure (P1) that is maintained at a constant level and that essentially corresponds to the gaseous pressure (P2) in the tank (4), and is guided into said tank to displace the liquid, the mass flow of the partial gaseous stream (2) being measured. A variation in the pressure (P1) allows a partial gaseous mass-flow to be set, whose volumetric flow, determined by taking into consideration the gas density (Q1), corresponds to the desired value for the liquid volumetric flow (Q3).

    VERFAHREN UND VORRICHTUNG ZUM ABSCHEIDEN EINES IN FLÜSSIGER FORM VORLIEGENDEN PREKURSORS AUF EINEM SUBSTRAT
    8.
    发明公开
    VERFAHREN UND VORRICHTUNG ZUM ABSCHEIDEN EINES IN FLÜSSIGER FORM VORLIEGENDEN PREKURSORS AUF EINEM SUBSTRAT 有权
    方法和设备对该前驱物在衬底上的液状分离

    公开(公告)号:EP1252362A2

    公开(公告)日:2002-10-30

    申请号:EP01946907.1

    申请日:2001-01-29

    申请人: Aixtron AG

    IPC分类号: C23C16/448 H01L21/00

    CPC分类号: C23C16/4485

    摘要: Disclosed is a device for depositing at least one precursor (6') on at least one substrate, said precursor being present in liquid or dissolved form. The inventive device comprises at least one storage container (6) for the individual or mixed precursor(s) and a reaction chamber (1) in which the substrate(s) is/are arranged, the layers being placed on said substrate(s). The inventive device also comprises a conveying device (8) that conveys the precursor(s) from the storage container(s) to the area by means of at least one line, whereby the precursor(s) are vaporised in said area. Said device further comprises a control unit which controls the conveying device (8). The invention is characterised in that a sensor unit (41, 42) is provided which detects the amount of the supplied precursors and has an output signal that is applied to the control unit as a real signal. The control unit controls the conveying device in such a way that the mass flow pertaining to the precursors has a mean predetermined value during a given time period.

    VERFAHREN ZUR ABSCHEIDUNG VON SILIZIUM UND GERMANIUM ENTHALTENDEN SCHICHTEN
    10.
    发明公开
    VERFAHREN ZUR ABSCHEIDUNG VON SILIZIUM UND GERMANIUM ENTHALTENDEN SCHICHTEN 有权
    工艺用于硅的分离和锗含有层

    公开(公告)号:EP1774056A1

    公开(公告)日:2007-04-18

    申请号:EP05716765.2

    申请日:2005-02-22

    申请人: Aixtron AG

    IPC分类号: C23C16/30 C30B29/52

    CPC分类号: C30B29/52 C30B25/02 C30B25/14

    摘要: The invention relates to a method for depositing at least one semiconductor layer on at least one substrate in a processing chamber (2). Said semiconductor layer is composed of several components which are evaporated by non-continuously injecting a liquid starting material (3) or a starting material (3) dissolved in a liquid into a tempered evaporation chamber (4) with the aid of one respective injector unit (5) while said vapor is fed to the processing chamber by means of a carrier gas (7). The inventive method is characterized in that the mass flow rate parameters, such as the preliminary injection pressure, the injection frequency, the pulse/pause ratio, and the phase relation between the pulses/pauses and the pulses/pauses of the other injector unit(s), which determine the progress of the mass flow rate of a first silicon-containing starting material and a germanium-containing second starting material (3) through the associated injector unit (5), are individually adjusted or varied.