摘要:
The invention relates to a device for depositing at least one especially thin layer onto at least one substrate (9). Said device comprises a process chamber (1, 20, 11, 11', 40, 21), housed in a reactor housing (2) and comprising a movable susceptor (20) which carries the at least one substrate (9). A plurality of gas feed lines (24) run into said process chamber and feed different process gases which comprise coat-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the coat-forming components onto the substrate (9). In order to increase the throughput of said method, the process chamber is provided with a plurality of separate deposition chambers (11, 11') into which different gas feed lines (24, 24') run, thereby feeding individual gas compositions. The substrate (9) can be fed to said chambers one after the other by moving the susceptor (20) and depositing different layers or layer components.
摘要:
The invention relates to a method for supplying a CVD reactor with a liquid starting material entering into a gaseous phase, consisting of a nozzle (1) comprising a liquid channel (2) which leads crosswise into a gas flow channel (3) for producing an aerosol which evaporates with heat. The aim of the invention is to improve the dosability of the generic method or device in such a way that the heat from evaporation is subsequently removed from the gas.
摘要:
The invention relates to a method for supplying a CVD reactor with a liquid starting material entering into a gaseous phase, consisting of a nozzle (1) comprising a liquid channel (2) which leads crosswise into a gas flow channel (3) for producing an aerosol which evaporates with heat. The aim of the invention is to improve the dosability of the generic method or device in such a way that the heat from evaporation is subsequently removed from the gas.
摘要:
The invention relates to a method for the metered delivery of low volumetric flows by the introduction of a gaseous stream into a tank containing a liquid and the displacement of the liquid through a liquid conduit. To improve said method, a partial gaseous stream (Q2) is diverted from a mass-flow controlled gaseous stream (Q1), at a pressure (P1) that is maintained at a constant level and that essentially corresponds to the gaseous pressure (P2) in the tank (4), and is guided into said tank to displace the liquid, the mass flow of the partial gaseous stream (2) being measured. A variation in the pressure (P1) allows a partial gaseous mass-flow to be set, whose volumetric flow, determined by taking into consideration the gas density (Q1), corresponds to the desired value for the liquid volumetric flow (Q3).
摘要:
The invention relates to a method for the deposition of at least one layer on at least one substrate in a process chamber, whereby the layer comprises at least one component. The at least one first metal component is vaporised in a particularly conditioned carrier gas by means of a non-continuous injection of a starting material in the form of a liquid or dissolved in a liquid and at least one second component as chemically-reactive starting material. The starting materials are alternately introduced into the process chamber and the second starting material is a chemically-reactive gas or a chemically-reactive liquid.
摘要:
Disclosed is a device for depositing at least one precursor (6') on at least one substrate, said precursor being present in the liquid or dissolved form. The inventive device comprises at least one storage container (6) for the individual or mixed precursor/s and a reaction chamber (1), wherein the substrate/s is/are arranged. The aim of the invention is to mount the layers on said substrate/s. The inventive device also comprises a conveying device (8) that conveys the precursor/s from the storage container/s to the area by means of at least one line, whereby the precursor/s are vaporised in said area. Said device further comprises a control unit which controls the conveying device (8). The invention is characterised in that a sensor unit (41, 42) is provided which detects the amount of the supplied precursors and has an output signal that is applied to the control unit as a real signal. The control unit controls the conveying device in such a way that the mass flow pertaining to the precursors has a value over a certain period, whereby the mean of said mass flow is taken and said value can be pre-determined.
摘要:
The invention relates to a method for the metered delivery of low volumetric flows by the introduction of a gaseous stream into a tank containing a liquid and the displacement of the liquid through a liquid conduit. To improve said method, a partial gaseous stream (Q2) is diverted from a mass-flow controlled gaseous stream (Q1), at a pressure (P1) that is maintained at a constant level and that essentially corresponds to the gaseous pressure (P2) in the tank (4), and is guided into said tank to displace the liquid, the mass flow of the partial gaseous stream (2) being measured. A variation in the pressure (P1) allows a partial gaseous mass-flow to be set, whose volumetric flow, determined by taking into consideration the gas density (Q1), corresponds to the desired value for the liquid volumetric flow (Q3).
摘要:
Disclosed is a device for depositing at least one precursor (6') on at least one substrate, said precursor being present in liquid or dissolved form. The inventive device comprises at least one storage container (6) for the individual or mixed precursor(s) and a reaction chamber (1) in which the substrate(s) is/are arranged, the layers being placed on said substrate(s). The inventive device also comprises a conveying device (8) that conveys the precursor(s) from the storage container(s) to the area by means of at least one line, whereby the precursor(s) are vaporised in said area. Said device further comprises a control unit which controls the conveying device (8). The invention is characterised in that a sensor unit (41, 42) is provided which detects the amount of the supplied precursors and has an output signal that is applied to the control unit as a real signal. The control unit controls the conveying device in such a way that the mass flow pertaining to the precursors has a mean predetermined value during a given time period.
摘要:
The invention relates to a method for depositing at least one semiconductor layer on at least one substrate in a processing chamber (2). Said semiconductor layer is composed of several components which are evaporated by non-continuously injecting a liquid starting material (3) or a starting material (3) dissolved in a liquid into a tempered evaporation chamber (4) with the aid of one respective injector unit (5) while said vapor is fed to the processing chamber by means of a carrier gas (7). The inventive method is characterized in that the mass flow rate parameters, such as the preliminary injection pressure, the injection frequency, the pulse/pause ratio, and the phase relation between the pulses/pauses and the pulses/pauses of the other injector unit(s), which determine the progress of the mass flow rate of a first silicon-containing starting material and a germanium-containing second starting material (3) through the associated injector unit (5), are individually adjusted or varied.