公开(公告)号：EP1497481A2

公开(公告)日：2005-01-19

申请号：EP03725039.6

申请日：2003-04-16

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  STRAUCH, Gerhard, Karl

IPC分类号： C23C16/458 ,  C30B25/12 ,  C30B25/02

CPC分类号： C23C16/45565 ,  C23C16/45589

摘要： The invention relates to a method and a device for depositing thin layers on a substrate in a process chamber (4) arranged in a reactor housing (1, 2, 3), the bottom of said process chamber consisting of a temperable substrate holder (5) which can be rotatably driven about its vertical axis (6), and the cover of said chamber consisting of a gas inlet element (7). Said cover extends parallel to the bottom and forms, together with its gas outlets (8) arranged in a sieve-type manner, a gas exit surface (10) which extends over the entire substrate bearing surface (9) of the substrate holder (5), the process gas being introduced into the process chamber (4) through said gas exit surface. The invention is characterised in that the height of the process chamber which is defined by the distance (H) between the substrate bearing surface (9) and the gas exit surface (10) is varied before the beginning of the deposition process and/or during the deposition process.

公开(公告)号：EP1488023A1

公开(公告)日：2004-12-22

申请号：EP03744817.2

申请日：2003-03-19

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  HEUKEN, Michael

IPC分类号： C23C16/448 ,  C23C14/22 ,  C23C14/54 ,  C23C16/52 ,  C23C14/12

CPC分类号： C23C14/228 ,  C23C14/12 ,  C23C14/22 ,  C23C16/45525 ,  H01L51/0008 ,  H01L51/001

摘要： The invention relates to a method and a device for coating at least one substrate with a thin layer in a processing chamber (2) of a reactor (1). A solid or liquid starting material (15) stored at least in a reservoir (12) is guided into the processing chamber (2) as a gas or an aerosol by means of a carrier gas, where it is condensed on the substrate (3). The solid or liquid starting material (15) is maintained at a source temperature which is higher than the substrate temperature. In order to enable a targeted adjustment of the composition, sequence of layers and properties of the contact surface which determine the properties of the components, the carrier gas flows through the starting material (15) and the supply of the gaseous starting material to the processing chamber (2) is controlled by means of at least one valve (8) and one mass flow regulator (9).

公开(公告)号：EP1255876B1

公开(公告)日：2003-07-30

申请号：EP01903774.6

申请日：2001-02-15

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  KÄPPELER, Johannes ,  STRAUCH, Gert ,  SCHMITZ, Dietmar

IPC分类号： C23C16/448 ,  C23C16/46 ,  C23C16/52

CPC分类号： C23C16/45574 ,  C23C14/0015 ,  C23C14/12 ,  C23C14/22 ,  C23C14/228 ,  C23C16/006 ,  C23C16/4481 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572

摘要： A method and device for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterised in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.

公开(公告)号：EP1313897A1

公开(公告)日：2003-05-28

申请号：EP01957962.2

申请日：2001-07-13

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  STRAUCH, Gerd ,  KÄPPELER, Johannes

IPC分类号： C30B25/14 ,  C23C16/44

CPC分类号： C23C16/45572 ,  C23C16/455 ,  C30B25/14

摘要： The invention relates to a device and method for the deposition of, in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber (1), by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber (1) has a first wall (3) and a second wall (4), lying opposite the first. The first wall is provided with at least one heated substrate holder (45), to which at least one reaction gas is led by means of a gas inlet device (6). According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device (1) is liquid cooled.

公开(公告)号：EP1273027A1

公开(公告)日：2003-01-08

申请号：EP01933607.2

申请日：2001-04-12

申请人： Aixtron AG

发明人： FRANKEN, Walter ,  STRAUCH, Gerd ,  KÄPPELER, Johannes ,  JÜRGENSEN, Holger

IPC分类号： H01J37/32

CPC分类号： H01J37/321 ,  H01J37/32577

摘要： The invention relates to a reaction chamber especially for carrying out substrate coating methods, such as CVD methods, characterized in that at least one opening is provided in at least one outer wall in which an HF and especially an RF feedthrough is inserted in a pressure or vacuum tight manner. The inventive reaction chamber is further characterized by a combination of the following features: a support plate is sealingly inserted in every opening; the support plate has at least one opening for an HF line; every HF line is provided with a collar in the zone disposed in the reaction chamber, a first seal being mounted on said collar; a first disc from an insulating material is inserted between a second seal on the support pate and the first seal on the collar; a thread is provided in the zone outside the reaction chamber of every HF line, a screw element being screwed onto said thread in such a manner that it sealingly forces the collar of the HF line against the insulating disc via the first seal and said disc against the support plate via the second seal, without an electrical contact between the HF line and the support plate being established or an arc-over between the HF line and the support plate occurring.

公开(公告)号：EP1252363A1

公开(公告)日：2002-10-30

申请号：EP01915184.4

申请日：2001-02-02

申请人： Aixtron AG

发明人： SCHUMACHER, Marcus ,  STRZYZEWSKI, Piotr ,  STRAUCH, Gerd ,  DAUELSBERG, Martin ,  JÜRGENSEN, Holger

IPC分类号： C23C16/455

CPC分类号： C23C16/45574 ,  C23C16/45514 ,  C23C16/4557 ,  C23C16/45572 ,  Y10T117/10 ,  Y10T117/1016

摘要： The invention relates to a device and method for depositing one or more layers onto at least one substrate (2) placed inside a reaction chamber (1). The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit (8) to the reaction chamber (1) where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit though closely arranged outlet openings while also being spatial separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.

公开(公告)号：EP1523585B1

公开(公告)日：2009-05-20

申请号：EP03764944.9

申请日：2003-07-07

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  KÄPPELER, Johannes ,  FRANKEN, Walter

IPC分类号： C23C16/458 ,  H01L21/00

CPC分类号： H01L21/68764 ,  C23C14/56 ,  C23C16/4585 ,  C23C16/54 ,  H01L21/67754 ,  H01L21/68707 ,  H01L21/68771

摘要： The invention relates to a device for loading at least one substrate (1) into a process chamber of a coating unit and unloading the at least one substrate (1) therefrom by means of a gripper (2) of a handling machine. The inventive device comprises a loading plate (3) which can be gripped by the gripper (2) and embodies a storage place for each at least one substrate (1), said storage place being formed by an edge (4) of an opening (5) that is assigned to each substrate (1). The inventive device also comprises a substrate holder (7) that is provided with a pedestal-type substrate support which is adapted to the loading plate (3) and on which the substrate plate can be placed such that some sectors of the surface of the substrate support are located at a certain gap distance from the substrate or the substrate lies in a planar manner on a sector of the surface.

公开(公告)号：EP1313897B1

公开(公告)日：2007-01-03

申请号：EP01957962.2

申请日：2001-07-13

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  STRAUCH, Gerd ,  KÄPPELER, Johannes

IPC分类号： C30B25/14 ,  C23C16/44

CPC分类号： C23C16/45572 ,  C23C16/455 ,  C30B25/14

摘要： The invention relates to a device and method for the deposition of, in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber (1), by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber (1) has a first wall (3) and a second wall (4), lying opposite the first. The first wall is provided with at least one heated substrate holder (45), to which at least one reaction gas is led by means of a gas inlet device (6). According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device (1) is liquid cooled.

公开(公告)号：EP1320636B9

公开(公告)日：2004-10-13

申请号：EP01974282.4

申请日：2001-09-22

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  STRAUCH, Gerd ,  SCHWAMBERA, Markus

IPC分类号： C23C16/448 ,  C23C16/455

CPC分类号： C23C14/228 ,  C23C14/12 ,  C23C14/185 ,  C23C16/4402 ,  C23C16/4481 ,  Y10T117/1004 ,  Y10T117/1008

摘要： The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor (1), a non-gaseous starting material (3) that is stored in a source (I) in the form of a container (2) is transported from said source (I) to a substrate (II) by a carrier gas (4) in gaseous form (5) and is deposited on said substrate (II). The rate of production of the gaseous starting material by the source is unpredictable due to a heat input that cannot be regulated in a reproducible manner and due to cooling resulting from the carrier gas. The invention therefor provides that the preheated (6) carrier gas (4) washes through the starting material (3) from bottom to top, the starting material being kept essentially isothermal in relation to the carrier gas by the heated (7) container walls (13).

摘要翻译： 本发明涉及用于沉积特别是有机层的方法和设备。 在加热的反应器（1）中，储存在容器（2）形式的源（I）中的非气态起始材料（3）通过以下方式从所述源（I）输送到基底 气态形式的载气（4）（5）并沉积在所述基底（II）上。 由于不能以可重复的方式调节的热量输入以及由于载气产生的冷却，热源导致的气态原料的产生速率是不可预测的。 本发明规定，预热的（6）载气（4）从底部到顶部通过起始材料（3）进行洗涤，起始材料通过加热的（7）容器壁相对于载气基本保持等温 13）。

公开(公告)号：EP1320636B1

公开(公告)日：2004-04-21

申请号：EP01974282.4

申请日：2001-09-22

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  STRAUCH, Gerd ,  SCHWAMBERA, Markus

IPC分类号： C23C16/448 ,  C23C16/455

CPC分类号： C23C14/228 ,  C23C14/12 ,  C23C14/185 ,  C23C16/4402 ,  C23C16/4481 ,  Y10T117/1004 ,  Y10T117/1008

摘要： The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor (1), a non-gaseous starting material (3) that is stored in a source (I) in the form of a container (2) is transported from said source (I) to a substrate (II) by a carrier gas (4) in gaseous form (5) and is deposited on said substrate (II). The rate of production of the gaseous starting material by the source is unpredictable due to a heat input that cannot be regulated in a reproducible manner and due to cooling resulting from the carrier gas. The invention therefor provides that the preheated (6) carrier gas (4) washes through the starting material (3) from bottom to top, the starting material being kept essentially isothermal in relation to the carrier gas by the heated (7) container walls (13).