公开(公告)号：EP1861520B1

公开(公告)日：2009-08-12

申请号：EP06724824.5

申请日：2006-01-05

申请人： AIXTRON AG

发明人： REINHOLD, Markus ,  BAUMANN, Peter

IPC分类号： C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45512

摘要： The invention relates to a gas inlet element (2) for a CVD reactor with a chamber (4), which has a multitude of bottom-side outlet openings (23), via which a process gas introduced into the chamber (4) via edge-side access openings (10) exits into a process chamber (21) of the CVD reactor (1). In order to homogenize the gas composition, the invention provides that at least one mixing chamber arrangement (11, 12, 13) is situated upstream from the access openings (10), and at least two process gases are mixed with one another inside this mixing chamber arrangement.

公开(公告)号：EP1774057A1

公开(公告)日：2007-04-18

申请号：EP05762972.7

申请日：2005-07-01

申请人： Aixtron AG

发明人： BAUMANN, Peter ,  STRYZEWSKI, Piotr ,  SCHUMACHER, Marcus ,  LINDNER, Johannes ,  KÜSTERS, Antonio, Mesquida

IPC分类号： C23C16/54

CPC分类号： C23C16/458 ,  B05C3/18 ,  B05D1/36 ,  C23C16/45551

摘要： The invention relates to a device for depositing at least one especially thin layer onto at least one substrate (9). Said device comprises a process chamber (1, 20, 11, 11', 40, 21), housed in a reactor housing (2) and comprising a movable susceptor (20) which carries the at least one substrate (9). A plurality of gas feed lines (24) run into said process chamber and feed different process gases which comprise coat-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the coat-forming components onto the substrate (9). In order to increase the throughput of said method, the process chamber is provided with a plurality of separate deposition chambers (11, 11') into which different gas feed lines (24, 24') run, thereby feeding individual gas compositions. The substrate (9) can be fed to said chambers one after the other by moving the susceptor (20) and depositing different layers or layer components.

公开(公告)号：EP1479056A1

公开(公告)日：2004-11-24

申请号：EP03742525.3

申请日：2003-02-15

申请人： Aixtron AG

发明人： BAUMANN, Peter ,  STRAUCH, Gerd ,  SCHUMACHER, Marcus ,  FRANKEN, Walter

IPC分类号： G08C17/02 ,  C30B25/16 ,  C23C14/54

CPC分类号： C23C16/52 ,  C23C16/4586 ,  C30B25/16

摘要： The invention relates to a device for depositing thin, especially crystalline layers on at least one substrate (1), especially a crystalline substrate. Said device comprises a substrate holder (3) which is rotationally arranged in a reactor housing (2) and at least one sensor (4, 5) for measuring a process parameter and a transferring means for transferring the measured values of the process parameter to an evaluation device. The inventive transfer takes place in a wireless manner. The transmitter (6) is arranged inside the reactor housing (2) and a receiver (7) is arranged outside the reactor housing.

公开(公告)号：EP1479056B1

公开(公告)日：2007-09-05

申请号：EP03742525.3

申请日：2003-02-15

申请人： Aixtron AG

发明人： BAUMANN, Peter ,  STRAUCH, Gerd ,  SCHUMACHER, Marcus ,  FRANKEN, Walter

IPC分类号： G08C17/02 ,  C30B25/16 ,  C23C14/54

CPC分类号： C23C16/52 ,  C23C16/4586 ,  C30B25/16

摘要： The invention relates to a device for depositing thin, especially crystalline layers on at least one substrate (1), especially a crystalline substrate. Said device comprises a substrate holder (3) which is rotationally arranged in a reactor housing (2) and at least one sensor (4, 5) for measuring a process parameter and a transferring means for transferring the measured values of the process parameter to an evaluation device. The inventive transfer takes place in a wireless manner. The transmitter (6) is arranged inside the reactor housing (2) and a receiver (7) is arranged outside the reactor housing.

公开(公告)号：EP1733073A2

公开(公告)日：2006-12-20

申请号：EP05750695.8

申请日：2005-03-09

申请人： Aixtron AG

发明人： BAUMANN, Peter ,  SCHUMACHER, Marcus ,  LINDNER, Johannes

IPC分类号： C23C16/455 ,  C23C16/448

CPC分类号： C23C16/45523 ,  C23C16/4408 ,  C23C16/4481

摘要： The invention relates to a method for the deposition of at least one layer on at least one substrate in a process chamber, whereby the layer comprises at least one component. The at least one first metal component is vaporised in a particularly conditioned carrier gas by means of a non-continuous injection of a starting material in the form of a liquid or dissolved in a liquid and at least one second component as chemically-reactive starting material. The starting materials are alternately introduced into the process chamber and the second starting material is a chemically-reactive gas or a chemically-reactive liquid.

公开(公告)号：EP1774057B1

公开(公告)日：2009-09-02

申请号：EP05762972.7

申请日：2005-07-01

申请人： AIXTRON AG

发明人： BAUMANN, Peter ,  STRYZEWSKI, Piotr ,  SCHUMACHER, Marcus ,  LINDNER, Johannes ,  KÜSTERS, Antonio, Mesquida

IPC分类号： C23C16/54

CPC分类号： C23C16/458 ,  B05C3/18 ,  B05D1/36 ,  C23C16/45551

公开(公告)号：EP1774056A1

公开(公告)日：2007-04-18

申请号：EP05716765.2

申请日：2005-02-22

申请人： Aixtron AG

发明人： SCHUMACHER, Marcus ,  BAUMANN, Peter ,  LINDNER, Johannes ,  MCENTEE, Timothy

IPC分类号： C23C16/30 ,  C30B29/52

CPC分类号： C30B29/52 ,  C30B25/02 ,  C30B25/14

摘要： The invention relates to a method for depositing at least one semiconductor layer on at least one substrate in a processing chamber (2). Said semiconductor layer is composed of several components which are evaporated by non-continuously injecting a liquid starting material (3) or a starting material (3) dissolved in a liquid into a tempered evaporation chamber (4) with the aid of one respective injector unit (5) while said vapor is fed to the processing chamber by means of a carrier gas (7). The inventive method is characterized in that the mass flow rate parameters, such as the preliminary injection pressure, the injection frequency, the pulse/pause ratio, and the phase relation between the pulses/pauses and the pulses/pauses of the other injector unit(s), which determine the progress of the mass flow rate of a first silicon-containing starting material and a germanium-containing second starting material (3) through the associated injector unit (5), are individually adjusted or varied.

公开(公告)号：EP1664380A2

公开(公告)日：2006-06-07

申请号：EP04787104.1

申请日：2004-09-07

申请人： Aixtron AG

发明人： SCHUMACHER, Marcus ,  BAUMANN, Peter ,  LINDNER, Johannes ,  DESCHLER, Marc

IPC分类号： C23C16/52

CPC分类号： C23C16/4411 ,  C23C16/4481 ,  C23C16/52

摘要： The invention relates to a method and device for depositing at least one layer on at least one substrate in a process chamber (2). Said layer comprises several components and is insulating, passivating or electrically conductive. The components are vaporized in a tempered vaporization chamber (4) by means of non-continuous injection of a liquid starting material (3) or a starting material (3) dissolved in a liquid using a respective injector unit (5). Said vapor is guided to the process chamber by means of a carrier gas (7). It is important to individually adjust or vary the material flow parameters, such as injection frequency and the pulse/pause ratio and the phase relation of the pulse/pauses to the pulse/pauses of the other injector unit (s), determining the time response of the flow of material through each injector unit (5). The pressure in the process chamber (2) is less than 100 mbars, the process chamber (2) is tempered and several series of layers are deposited on the substrate (1) during one process step.