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    Electroplating system
    1.
    发明公开
    Electroplating system 审中-公开
    电镀系统

    公开(公告)号：EP1067590A3

    公开(公告)日：2004-05-12

    申请号：EP00305658.7

    申请日：2000-07-05

    申请人： Applied Materials, Inc.

    发明人： Cheng, Robin ,  Carl, Daniel A. ,  Dordi, Yezdi N. ,  Hey, Peter ,  Morad, Ratson ,  Chen, Liang-Yuh ,  Smith, Paul F. ,  Sinha, Ashok K.

    IPC分类号： H01L21/00 ,  C25D7/12 ,  C23C18/16

    CPC分类号： H01L21/68721 ,  C25D7/123 ,  C25D17/001 ,  H01L21/68728 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The disclosure relates to a system and method that deposits an electroless seed layer on a substrate prior to subsequent processing. The system is designed with flexible architecture and can be configured in several ways. The electroless deposition process is performed in-situ with an electroplating process to minimize oxidation and other contaminants prior to the electroplating process. The system allows the substrate to be transferred from the electroless deposition process to the electroplating process with a protective coating to also minimise oxidation. The system generally includes a mainframe (214) having a mainframe substrate transfer robot (228), a loading station (210) disposed in connection with the mainframe, one or more processing facilities (218) disposed in connection with the mainframe, and an electroless supply (220) fluidly connected to the one or more processing applicators (240). Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station (212) disposed between the loading station and the mainframe, a rapid thermal anneal chamber (211) attached to the loading station, and a system controller for controlling the deposition processes and the components of the electro-chemical deposition system. The electroless deposition fills defects and discontinues in the activation, or seed, layer and allows subsequent processing, such as electroplating, to fill the remainder of the features without substantial voids in the deposited material.

    Atomic layer deposition of Ta205 and high-K dielectrics
    3.
    发明公开
    Atomic layer deposition of Ta205 and high-K dielectrics 审中-公开
    Abscheidung von Atomschichten aus Ta2O5和aus Dielektrika mit hohem K-Wert

    公开(公告)号：EP1205574A2

    公开(公告)日：2002-05-15

    申请号：EP01309503.9

    申请日：2001-11-09

    申请人： Applied Materials, Inc.

    发明人： Ravi, Jallepally ,  Duboust, Alain ,  Li, Shih-Hung ,  Song, Kevin ,  Majewski, Robert B. ,  Chen, Liang-Yuh ,  Carl, Daniel A.

    IPC分类号： C23C16/40 ,  H01L21/316

    CPC分类号： C23C16/45553 ,  C23C16/308 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45531 ,  H01L21/31604

    摘要： Methods of forming compound thin films through atomic layer deposition using high-k dielectric Group VB species are described. A substrate is placed in a reaction chamber. A first reactant gas of a Group VB element is injected into the reaction chamber where it is chemisorbed as an atomic layer on the substrate surface. A second reactant gas, when injected into the reaction chamber, flows over the atomic layer of the first reactant gas and forms an atomic layer on the atomic layer of the first reactant gas. This process can be repeated, alternately subjecting the surface to the first reactant gas and the second reactant gas, until the compound thin film reaches the desired thickness. A purge gas is injected into the reaction chamber between two successive reactant gas injections to purge the chamber of any excess, or unreacted, reactant gas.

    摘要翻译： 描述了使用高k电介质组VB物质通过原子层沉积形成复合薄膜的方法。 将基板放置在反应室中。 将VB族元素的第一反应气体注入到反应室中，在反应室中被化学吸附为基底表面上的原子层。 第二反应气体在注入反应室时流过第一反应气体的原子层，并在第一反应气体的原子层上形成原子层。 可以重复该过程，交替地将表面经受第一反应气体和第二反应气体，直到化合物薄膜达到所需厚度。 在两次连续的反应气体注入之间，将一个净化气体注入反应室中，以清除室内任何过量或未反应的反应气体。

    Heavy gas plasma sputtering
    5.
    发明公开
    Heavy gas plasma sputtering 审中-公开
    Plasmazerstäubungmit schweren Gasen

    公开(公告)号：EP1096036A1

    公开(公告)日：2001-05-02

    申请号：EP00309650.0

    申请日：2000-11-01

    申请人： Applied Materials, Inc.

    发明人： Ding, Peijun ,  Tao, Rong ,  Chin, Barry ,  Carl, Daniel A.

    IPC分类号： C23C14/04 ,  C23C14/35

    CPC分类号： C23C14/046 ,  C23C14/358

    摘要： A copper metallization method for depositing a conformal barrier layer (174) and seed layer (176) in a plasma chamber (100). The barrier layer and seed layer are preferably deposited in a plasma chamber having an inductive coil (122) and a target (104) comprising the material to be sputtered. One or more plasma gases having high molar masses relative to the target material are then introduced into the chamber to form a plasma. Preferably, the plasma gases are selected from xenon, krypton or a combination thereof.

    摘要翻译： 一种用于在等离子体室（100）中沉积保形阻挡层（174）和种子层（176）的铜金属化方法。 阻挡层和种子层优选沉积在具有感应线圈（122）的等离子体室和包括要溅射的材料的靶（104）上。 然后将相对于靶材料具有高摩尔质量的一种或多种等离子体气体引入室中以形成等离子体。 优选地，等离子体气体选自氙，氪或其组合。

    Conductive polishing article for electrochemical mechanical polishing
    6.
    发明公开
    Conductive polishing article for electrochemical mechanical polishing 有权
    LeitenderPolierkörperzum elektrochemisch-mechanischen Polieren

    公开(公告)号：EP1640113A1

    公开(公告)日：2006-03-29

    申请号：EP05077958.6

    申请日：2002-04-10

    申请人： APPLIED MATERIALS, INC.

    发明人： Chen, Liang-Yuh ,  Wang, Yan ,  Wang, Yuchun ,  Duboust, Alain ,  Carl, Daniel A. ,  Birang, Manoocher ,  Mavliev, Rashid ,  Wadensweiler, Ralph ,  Butterfield, Paul D. ,  Tsai, Stan D.

    IPC分类号： B24B37/04 ,  B24D13/14 ,  B23H5/08

    CPC分类号： B24B37/26 ,  B23H5/08 ,  B24B37/24 ,  C25F7/00

    摘要： An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a mounting surface. A plurality of perforations may be formed in the polishing article for flow of material therethrough. In another aspect, a polishing article for polishing a substrate includes a body having a polishing surface and a conductive element disposed therein. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. The polishing surface may have one or more pockets formed therein. The conductive element may be disposed in each of the polishing pockets.

    摘要翻译： 提供了一种用于平坦化基板表面的制造和设备。 在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括抛光制品，所述抛光制品包括具有适于抛光所述衬底和安装表面的至少部分导电表面的主体。 可以在抛光制品中形成多个穿孔，以使材料流过其中。 另一方面，用于抛光衬底的抛光制品包括具有抛光表面和设置在其中的导电元件的主体。 导电元件可以具有延伸超过由抛光表面限定的平面的接触表面。 抛光表面可以具有形成在其中的一个或多个凹穴。 导电元件可以设置在每个抛光槽中。

    Electroplating system
    7.
    发明公开
    Electroplating system 审中-公开
    Elektroplattierungssystem

    公开(公告)号：EP1067590A2

    公开(公告)日：2001-01-10

    申请号：EP00305658.7

    申请日：2000-07-05

    申请人： Applied Materials, Inc.

    发明人： Cheng, Robin ,  Carl, Daniel A. ,  Dordi, Yezdi N. ,  Hey, Peter ,  Morad, Ratson ,  Chen, Liang-Yuh ,  Smith, Paul F. ,  Sinha, Ashok K.

    IPC分类号： H01L21/00

    CPC分类号： H01L21/68721 ,  C25D7/123 ,  C25D17/001 ,  H01L21/68728 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The disclosure relates to a system and method that deposits an electroless seed layer on a substrate prior to subsequent processing. The system is designed with flexible architecture and can be configured in several ways. The electroless deposition process is performed in-situ with an electroplating process to minimize oxidation and other contaminants prior to the electroplating process. The system allows the substrate to be transferred from the electroless deposition process to the electroplating process with a protective coating to also minimise oxidation. The system generally includes a mainframe (214) having a mainframe substrate transfer robot (228), a loading station (210) disposed in connection with the mainframe, one or more processing facilities (218) disposed in connection with the mainframe, and an electroless supply (220) fluidly connected to the one or more processing applicators (240). Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station (212) disposed between the loading station and the mainframe, a rapid thermal anneal chamber (211) attached to the loading station, and a system controller for controlling the deposition processes and the components of the electro-chemical deposition system. The electroless deposition fills defects and discontinues in the activation, or seed, layer and allows subsequent processing, such as electroplating, to fill the remainder of the features without substantial voids in the deposited material.

    摘要翻译： 本公开涉及一种在随后的处理之前将无电解种子层沉积在衬底上的系统和方法。 该系统设计灵活的架构，可以通过多种方式进行配置。 无电沉积工艺通过电镀工艺原位进行，以在电镀工艺之前使氧化和其他污染物最小化。 该系统允许衬底从无电沉积工艺转移到具有保护涂层的电镀工艺中，以使氧化最小化。 该系统通常包括具有主机基板传送机器人（228）的主机架（214），与主机连接设置的加载站（210），与主机连接设置的一个或多个处理设备（218）和无电解 供应（220）流体连接到一个或多个处理施加器（240）。 优选地，电化学沉积系统包括设置在装载站和主框架之间的旋转干燥（SRD）站（212），附接到装载站的快速热退火室（211）和用于 控制沉积工艺和电化学沉积系统的组件。 无电沉积填充了激活或种子层中的缺陷和中断，并且允许随后的处理，例如电镀，以填充剩余的特征，而没有沉积材料中的实质空隙。