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    Method and apparatus for electrochemical-mechanical planarization
    3.
    发明公开
    Method and apparatus for electrochemical-mechanical planarization 审中-公开
    电化学机械平面化的方法和设备

    公开(公告)号：EP1103346A2

    公开(公告)日：2001-05-30

    申请号：EP00310358.7

    申请日：2000-11-22

    申请人： Applied Materials, Inc.

    发明人： Sun, Lizhong ,  Tsai, Stan D. ,  Redeker, Fred C.

    IPC分类号： B24B37/04 ,  H01L21/306 ,  B23H3/00

    CPC分类号： H01L21/32125 ,  B23H5/08 ,  B24B37/042

    摘要： A method for performing electrochemical-mechanical planarization (EMP) of a workpiece surface (6) including a pattern of electrical conductors is disclosed comprising using a chemical-mechanical polishing (CMP)-type apparatus (20) having an abrasive of non-abrasive polishing pad (12,13) with an oxidizer-free, electrolytically conductive, abrasive or non-abrasive fluid from a conduit (8) and applying a time-varying anodic potential through terminal (W) to the workpiece surface (6) for controllably dissolving the material, e.g. metal, of the electrical conductors while simultaneously applying mechanical polishing action to the surface. The method advantageously reduces or substantially eliminates undesirable dishing characteristic of conventional CMP planarization processing utilizing chemical oxidizer agent(s). Apparatus for performing EMP are also disclosed.

    摘要翻译： 公开了一种用于执行包括电导体图案的工件表面（6）的电化学机械平面化（EMP）的方法，包括使用具有非研磨抛光磨料的化学机械抛光（CMP）型设备（20） （12,13）与来自导管（8）的不含氧化剂，电解导电，磨蚀性或非磨蚀性流体以及通过末端（W）向工件表面（6）施加随时间变化的阳极电位以可控地溶解 材料，例如 金属，同时对表面施加机械抛光作用。 该方法有利地减少或基本上消除了利用化学氧化剂（一种或多种）的常规CMP平坦化处理的不希望的凹陷特征。 还公开了执行EMP的装置。

    Advanced electrolytic polish assisted metal wafer planarization
    5.
    发明公开
    Advanced electrolytic polish assisted metal wafer planarization 审中-公开
    Fortgeschrittene Metall-Halbleiterscheibenplanarisierung mit Hilfe von Elektropolieren

    公开(公告)号：EP1104013A3

    公开(公告)日：2004-04-14

    申请号：EP00310560.8

    申请日：2000-11-29

    申请人： Applied Materials, Inc.

    发明人： Sun, Lizhong ,  Tsai, Stan D. ,  Redeker, Fred C.

    IPC分类号： H01L21/321 ,  B24B37/04 ,  C25F3/16

    CPC分类号： H01L21/3212 ,  H01L21/32115

    摘要： In advanced electrolytic polish (AEP) method, a metal wafer (10) acts as an anodic electrodes and another metal plate (65) is used as a cathodic electrode. A voltage differential is applied to the anode and cathode under a predetermined anodic dissolution current density. This causes a reaction that provides a planarized surface on the metal wafers. Additives are included in the electrolyte solution (55) which adsorb onto the wafer surface urging a higher removal rate at higher spots and a lower removal rate at lower spots. Also, in another embodiment of the present invention is a pulsed-electrolytic process (260) in which positive and negative potentials are applied to the anodic and cathodic electrodes alternately, further encouraging surface planarization. AEP can be used either as a first step followed by a mechanical polish or a second step between initial CMP polish and a third step mechanical polish. The present invention may also be added as a last step of copper electroplating process and so may be used in the manufacture of all kinds of patterned metal wafers.

    摘要翻译： 在高级电解抛光（AEP）方法中，金属晶片（10）用作阳极电极，另一金属板（65）用作阴极电极。 在预定的阳极溶解电流密度下，对阳极和阴极施加电压差。 这导致在金属晶片上提供平坦化表面的反应。 添加剂被包括在吸附在晶片表面上的电解质溶液（55）中，促使在较高点处的更高的去除速率和较低的去除率降低。 此外，在本发明的另一实施例中，脉冲电解方法（260）其中正电位和负电位交替地施加到阳极和阴极上，进一步促进了表面平坦化。 AEP可以作为第一步，然后进行机械抛光，或者在初始CMP抛光和第三步机械抛光之间使用第二步。 本发明也可以作为铜电镀工艺的最后一步添加，因此可用于制造各种图案化金属晶片。

    Method and apparatus for electrochemical-mechanical planarization
    7.
    发明公开
    Method and apparatus for electrochemical-mechanical planarization 审中-公开
    用于电化学机械平坦化的方法和装置

    公开(公告)号：EP1103346A3

    公开(公告)日：2001-11-21

    申请号：EP00310358.7

    申请日：2000-11-22

    申请人： Applied Materials, Inc.

    发明人： Sun, Lizhong ,  Tsai, Stan D. ,  Redeker, Fred C.

    IPC分类号： B24B37/04 ,  H01L21/306 ,  B23H3/00

    CPC分类号： H01L21/32125 ,  B23H5/08 ,  B24B37/042

    摘要： A method for performing electrochemical-mechanical planarization (EMP) of a workpiece surface (6) including a pattern of electrical conductors is disclosed comprising using a chemical-mechanical polishing (CMP)-type apparatus (20) having an abrasive or non-abrasive polishing pad (12,13) with an oxidizer-free, electrolytically conductive, abrasive or non-abrasive fluid from a conduit (8) and applying a time-varying anodic potential through terminal (W) to the workpiece surface (6) for controllably dissolving the material, e.g. metal, of the electrical conductors while simultaneously applying mechanical polishing action to the surface. The method advantageously reduces or substantially eliminates undesirable dishing characteristic of conventional CMP planarization processing utilizing chemical oxidizer agent(s). Apparatus for performing EMP are also disclosed.

    Conductive polishing article for electrochemical mechanical polishing
    9.
    发明公开
    Conductive polishing article for electrochemical mechanical polishing 有权
    LeitenderPolierkörperzum elektrochemisch-mechanischen Polieren

    公开(公告)号：EP1640113A1

    公开(公告)日：2006-03-29

    申请号：EP05077958.6

    申请日：2002-04-10

    申请人： APPLIED MATERIALS, INC.

    发明人： Chen, Liang-Yuh ,  Wang, Yan ,  Wang, Yuchun ,  Duboust, Alain ,  Carl, Daniel A. ,  Birang, Manoocher ,  Mavliev, Rashid ,  Wadensweiler, Ralph ,  Butterfield, Paul D. ,  Tsai, Stan D.

    IPC分类号： B24B37/04 ,  B24D13/14 ,  B23H5/08

    CPC分类号： B24B37/26 ,  B23H5/08 ,  B24B37/24 ,  C25F7/00

    摘要： An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a mounting surface. A plurality of perforations may be formed in the polishing article for flow of material therethrough. In another aspect, a polishing article for polishing a substrate includes a body having a polishing surface and a conductive element disposed therein. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. The polishing surface may have one or more pockets formed therein. The conductive element may be disposed in each of the polishing pockets.

    摘要翻译： 提供了一种用于平坦化基板表面的制造和设备。 在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括抛光制品，所述抛光制品包括具有适于抛光所述衬底和安装表面的至少部分导电表面的主体。 可以在抛光制品中形成多个穿孔，以使材料流过其中。 另一方面，用于抛光衬底的抛光制品包括具有抛光表面和设置在其中的导电元件的主体。 导电元件可以具有延伸超过由抛光表面限定的平面的接触表面。 抛光表面可以具有形成在其中的一个或多个凹穴。 导电元件可以设置在每个抛光槽中。

    Advanced electrolytic polish assisted metal wafer planarization
    10.
    发明公开
    Advanced electrolytic polish assisted metal wafer planarization 审中-公开
    使用电解先进的金属 - 半导体晶片平面化

    公开(公告)号：EP1104013A2

    公开(公告)日：2001-05-30

    申请号：EP00310560.8

    申请日：2000-11-29

    申请人： Applied Materials, Inc.

    发明人： Sun, Lizhong ,  Tsai, Stan D. ,  Redeker, Fred C.

    IPC分类号： H01L21/321

    CPC分类号： H01L21/3212 ,  H01L21/32115

    摘要： In advanced electrolytic polish (AEP) method, a metal wafer (10) acts as an anodic electrodes and another metal plate (65) is used as a cathodic electrode. A voltage differential is applied to the anode and cathode under a predetermined anodic dissolution current density. This causes a reaction that provides a planarized surface on the metal wafers. Additives are included in the electrolyte solution (55) which adsorb onto the wafer surface urging a higher removal rate at higher spots and a lower removal rate at lower spots. Also, in another embodiment of the present invention is a pulsed-electrolytic process (260) in which positive and negative potentials are applied to the anodic and cathodic electrodes alternately, further encouraging surface planarization. AEP can be used either as a first step followed by a mechanical polish or a second step between initial CMP polish and a third step mechanical polish. The present invention may also be added as a last step of copper electroplating process and so may be used in the manufacture of all kinds of patterned metal wafers.