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    APPARATUSES FOR ATOMIC LAYER DEPOSITION
    1.
    发明公开
    APPARATUSES FOR ATOMIC LAYER DEPOSITION 审中-公开
    VORRICHTUNGEN ZUR ATOMSCHICHTABLAGERUNG

    公开(公告)号：EP2913842A2

    公开(公告)日：2015-09-02

    申请号：EP15164096.8

    申请日：2009-07-02

    申请人： Applied Materials, Inc.

    发明人： Lam, Hyman ,  Zheng, Bo ,  Hua, Ai ,  Jackson, Michael ,  Yuan, XiaoXiong ,  Wang, Hou Gong ,  Umotoy, Salvador P. ,  Yu, San Ho

    IPC分类号： H01L21/205 ,  C23C16/455 ,  C23C16/44 ,  H01J37/32

    CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

    摘要： Embodiments of the invention provide apparatuses for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In one embodiment, an inlet manifold assembly is provided which includes an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly and injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The injection holes have a first plurality of injection holes extending towards or substantially towards a central axis of the centralized channel and the injection holes have a second plurality of injection holes extending tangential or substantially tangential towards the sidewall of the centralized channel.

    摘要翻译： 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）装置。 在一个实施例中，提供入口歧管组件，其包括围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件和从环形通道延伸通过集中通道的侧壁的注入孔， 集中渠道 喷射孔具有朝向或基本朝向集中通道的中心轴线延伸的第一多个喷射孔，并且喷射孔具有朝着集中通道的侧壁切向或基本切向延伸的第二多个喷射孔。