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    ANALYSING RF SIGNALS FROM A PLASMA SYSTEM
    2.
    发明公开
    ANALYSING RF SIGNALS FROM A PLASMA SYSTEM 有权
    在EINEM PLASMASYSTEM中分析VON HF信号

    公开(公告)号：EP2877864A2

    公开(公告)日：2015-06-03

    申请号：EP13774616.0

    申请日：2013-07-24

    申请人： Impedans Ltd

    发明人： SCULLIN, Paul ,  HOPKINS, Michael

    IPC分类号： G01R23/20 ,  G01R19/00

    CPC分类号： G01R23/20 ,  H01J37/32082 ,  H01J37/32972

    摘要： Samples representing signals and noise from a plasma system across a frequency range are collected. A first complex frequency-domain signal component is identified from a sample corresponding to a frequency value F at which a local maximum signal is found. This first component is phase-adjusted by a variable angle θ to a predetermined phase angle φ, and stored. A further complex component is identified corresponding to a frequency F(N) representing an Nth order harmonic of F. This further component is phase-adjusted by an angle N x θ, and stored. The procedure is repeated to build up sets of phase-adjusted first and further components, with θ chosen in each iteration for the first component to give a constant phase angle φ, and within any iteration the value of θ used for the first component is employed in the adjustment of the further component. The aggregated, phase-adjusted components exhibit increased signal-to-noise.

    摘要翻译： 收集表示频率范围内等离子体系统的信号和噪声的样本。 从对应于找到局部最大信号的频率值F的样本识别出第一复数频域信号分量。 该第一个组件通过可变角度＆amp; 到预定的相位角度并存储。 对应于表示F的N次谐波的频率F（N）来识别另一个复杂分量。该另外的分量被相位调整了N×＆amp;角度并被存储。 重复该过程以建立一组相位调整的第一和另外的组件，并具有; 在每个迭代中选择第一个组件以给出一个恒定的相位角＆phgr，并且在任何迭代中的值为＆amp; 用于第一组分的调整用于进一步的组分。 聚合的，相位调整的组件表现出增加的信噪比。

    PLASMA ELECTRON TEMPERATURE MEASURING METHOD AND DEVICE
    4.
    发明公开
    PLASMA ELECTRON TEMPERATURE MEASURING METHOD AND DEVICE 审中-公开
    VERFAHREN UND VORRICHTUNG ZUR MESSUNG DER ELEKTRONENTEMPERATUR IN EINEM PLASMA

    公开(公告)号：EP2139300A1

    公开(公告)日：2009-12-30

    申请号：EP08738754.4

    申请日：2008-03-24

    申请人： Mitsui Engineering & Shipbuilding Co., Ltd.

    发明人： TAKIZAWA, Kazuki

    IPC分类号： H05H1/00 ,  H01L21/205 ,  H01L21/3065

    CPC分类号： H05H1/0043 ,  G01J3/443 ,  H01J37/32926 ,  H01J37/32954 ,  H01J37/32972

    摘要： A laser beam with a wavelength capable of exciting atoms of helium in the metastable state is directed to a generated plasma, and atoms in the metastable state are excited. Absorption amount information representing the amount of laser beam absorbed is acquired, and the density of atoms of helium in the metastable state in the plasma is computed from the absorption amount. The emissions of light from helium gas in the plasma caused by transition from two different excited states to the lower level are measured, and the ratio between the intensities of the emissions is determined. The electron temperature of the produced plasma is computed from the computed density of the atoms of helium gas in the metastable state and the computed emission intensity ratio. With this, the plasma electron temperature can be computed with a relatively high accuracy irrespective of the condition of the plasma atmosphere.

    摘要翻译： 具有能够激发亚稳态的氦原子的波长的激光束被引导到产生的等离子体，而亚稳态的原子被激发。 获取表示吸收的激光束的量的吸收量信息，根据吸收量计算等离子体中的亚稳态的氦原子的密度。 测量从两种不同的激发态转换到较低级的等离子体中由氦气引起的光的发射，确定发射强度之间的比例。 所产生的等离子体的电子温度是从亚稳态中氦气原子的计算密度和计算出的发射强度比计算的。 由此，与等离子体气氛的条件无关地，可以以相对高的精度计算等离子体电子温度。

    A method of testing a plasma reactor
    6.
    发明公开
    A method of testing a plasma reactor 审中-公开
    Verfahren zurPrüfungeines Plasmareaktors

    公开(公告)号：EP1710560A1

    公开(公告)日：2006-10-11

    申请号：EP05102743.1

    申请日：2005-04-07

    申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) ,  UNIVERSITE JOSEPH FOURIER

    发明人： Cunge, Gilles ,  Mori, Masahito ,  Sadeghi, Nader ,  Kogelschatz, Martin

    IPC分类号： G01N21/33 ,  H01J37/32

    CPC分类号： G01N21/33 ,  H01J37/32935 ,  H01J37/32972

    摘要： The invention concerns a method of testing a plasma reactor comprising:
    a) introducing Cl 2 ,
    b) creating a plasma,
    c) after the plasma creation, measuring the Cl 2 concentration,
    d) comparing the measured Cl 2 concentration with a reference Cl 2 concentration,
    e) if said comparison indicates a deviation higher than a selected threshold, cleaning and possibly conditioning the reactor and repeating steps a) to d).

    摘要翻译： 本发明涉及一种测试等离子体反应器的方法，包括：a）引入Cl 2，b）产生等离子体，c）等离子体产生后测量Cl 2浓度，d）将测量的Cl 2浓度与参考Cl 2 浓度，e）如果所述比较指示高于选定阈值的偏差，则清洁并可能调节反应器并重复步骤a）至d）。

    Monitoring of plasma constituents using optical emission spectroscopy
    7.
    发明公开
    Monitoring of plasma constituents using optical emission spectroscopy 审中-公开
    Überwachungvon Plasmabestandteilen mittels optischer Emissionsspektroskopie

    公开(公告)号：EP0942453A2

    公开(公告)日：1999-09-15

    申请号：EP99301573.4

    申请日：1999-03-02

    申请人： EATON CORPORATION

    发明人： Stejic, George ,  Graf, Michael Anthony

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32935 ,  H01J37/32972

    摘要： Method and apparatus for use in treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. An implantation chamber (12, 112, 212) defines a chamber interior into which one or more workpieces can be inserted. A support (30, 216) positions one or more workpieces within an interior region of the implantation chamber so that implantation surfaces of the workpieces are facing the interior region. A dopant material in the form of a gas is injected into the implantation chamber to cause the gas to occupy a region of the implantation chamber in close proximity to the one or more workpieces. A plasma of implantation material is created within the interior region of the implantation chamber. Characteristics of the ion plasma are determined from an optical analysis of the plasma using optical spectroscopy. By supplying the data (185) from the optical spectroscopy to a database analysis tool executing on a computer (190), the relative concentration of constituent components of the plasma are determined.

    摘要翻译： 用于通过使离子冲击工件注入表面来处理工件注入表面的方法和装置。 植入室（12,112,212）限定了一个室内部，一个或多个工件可以插入其中。 支撑件（30,216）将一个或多个工件定位在注入室的内部区域内，使得工件的注入表面面向内部区域。 将气体形式的掺杂剂材料注入到注入室中，以使气体占据一个或多个工件附近的注入室的区域。 植入材料的等离子体在植入室的内部区域内产生。 使用光谱法从等离子体的光学分析确定离子等离子体的特性。 通过将光谱中的数据（185）提供给在计算机（190）上执行的数据库分析工具，确定等离子体的构成成分的相对浓度。

    Method and apparatus for monitoring the dry etching of a dielectric film to a given thickness
    9.
    发明公开
    Method and apparatus for monitoring the dry etching of a dielectric film to a given thickness 失效
    用于监测的电介质膜的干蚀刻，以给定的厚度的方法和装置

    公开(公告)号：EP0735565A1

    公开(公告)日：1996-10-02

    申请号：EP95480031.4

    申请日：1995-03-31

    申请人： International Business Machines Corporation ,  SOFIE INSTRUMENTS

    发明人： Canteloup, Jean ,  Coronel, Philippe ,  Auda, Bernard

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32935 ,  H01J37/32972

    摘要： Method and apparatus (20) for detecting the desired etch end point in the dry etching of a structure (24) comprised of a dielectric film (having nominal thickness E and refractive index N) formed onto a substrate down to a given thickness. The structure is placed in the chamber (22) of an etching equipment (21) provided with a view-port (26). A light source (29) illuminates a large portion of said structure at a normal angle of incidence through the view-port. The light contains at least two specified wavelengths (L1, L2) whose value is greater than a minimum value equal to 4*N*e (wherein e is the thickness error). The reflected light is applied to respective spectrometers (33A, 33B), each being tuned on a specified wavelength, for converting the reflected light into interference signals that are processed and analyzed in a dedicated unit (34) to generate primary signals (S1, S2). The analysis of the primary signals is performed after a predetermined delay the etching process has begun. For each wavelength, a pre-selected extremum of the primary signal is detected and a predetermined number of extrema is then counted. The counting is stopped when the last extremum just before the given thickness is reached. As a result, the distance D between said last extremum and said given thickness is now determinable. The etch rate ER is also measured in-situ before the last extremum. The symmetry of primary signals and etch rate variations are analyzed to identify which primary signal is the most adapted to the dielectric film composition. Finally, the remaining time dt ( dt = D/ER ) for the selected signal/wavelength couple is determined and the etching treatment is terminated when said remaining time has elapsed.

    摘要翻译： 用于检测所需的蚀刻终点在由形成到衬底下降到给定厚度的电介质片（具有标称厚度E和折射率N）的结构（24）的干式蚀刻的方法和装置（20）。 在设置有视图端口（26）的蚀刻设备（21）的腔室（22）的结构被放置。 一种光源（29）在通过所述视图端口入射的正常角度照射所述结构的大部分。 的光包含至少两个特定波长（L1，L2），其值是等于4 * N * E（worin e是厚度误差）的最小值大。 所反射的光被施加到respectivement光谱仪（33A，33B），每个被调谐在指定的波长，对于反射光变换成的干涉信号转换并处理和分析在专用单元（34），以生成主信号（S1，S2 ）。 主信号的分析是预定延迟蚀刻过程已开始后进行。 对于每个波长，当检测到主信号的预选择的极值，然后极值的预定数量进行计数。 计数停止当达到一定的厚度之前的负荷极值。 其结果是，所述负载极值和所述给定的厚度之间的距离D是现在可确定的。 刻蚀速率ER是负荷极值之前原位测量，因此。 主信号的对称性和蚀刻速率的变化进行分析，以识别哪个初级信号是最angepasst到电介质膜的组合物。 最后，所选择的信号/波长耦合的剩余时间DT（DT = D / ER）是确定性的开采和蚀刻处理被终止，当所述剩余时间是否已经过去。

    Semiconductor device manufacturing apparatus and semiconductor device menufacturing method
    10.
    发明公开
    Semiconductor device manufacturing apparatus and semiconductor device menufacturing method 失效
    Gerätund Verfahren zur Herstellung einer Halbleitervorrichtung。

    公开(公告)号：EP0644574A1

    公开(公告)日：1995-03-22

    申请号：EP94112773.0

    申请日：1994-08-16

    申请人： HITACHI, LTD.

    发明人： Kawada,Hiroki ,  Takahashi,Kazue ,  Edamura,Manabu ,  Kanai,Saburo ,  Tamura,Naoyuki

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32862 ,  H01J37/32935 ,  H01J37/32972 ,  H01J2237/022

    摘要： A semiconductor device manufacturing apparatus and its method, which measures the amount or chemical composition of reaction products adhering to or deposited on the inside of a processing chamber of the semiconductor device manufacturing apparatus, without exposing the chamber to the air. External light such as infrared light is introduced from a light introducing unit into the processing chamber by a light introducing means. A light receiving unit provided outside the processing chamber receives light reflected from a specified location inside the processing chamber or light reflected from an arbitrary location inside the chamber. The received light is then subjected to spectrometry or photometry to judge how badly the chamber is contaminated and to judge the state of the process being carried out.

    摘要翻译： 一种半导体器件制造装置及其方法，其测量粘附于或沉积在半导体器件制造装置的处理室的内部的反应产物的量或化学组成，而不将该室暴露于空气。 诸如红外光的外部光从光引入单元通过光引入装置引入处理室。 设置在处理室外部的光接收单元接收从处理室内的指定位置反射的光或从室内的任意位置反射的光。 然后接收光线进行光谱测定或光度测定，以判断室被污染的程度如何，并判断正在进行的过程的状态。