公开(公告)号：EP1182273B1

公开(公告)日：2008-12-10

申请号：EP01119361.2

申请日：2001-08-10

申请人： APPLIED MATERIALS, INC.

发明人： Kwan, Michael Chiu ,  Liu, Eric

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/517 ,  C23C16/52 ,  H01J37/32 ,  H01L21/316 ,  C23C16/44 ,  H01L21/768

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/4405 ,  C23C16/463 ,  C23C16/517 ,  C23C16/52 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3327 ,  H01J2237/3347 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/31608 ,  H01L21/31629 ,  Y10S438/911

公开(公告)号：EP1182273A2

公开(公告)日：2002-02-27

申请号：EP01119361.2

申请日：2001-08-10

申请人： Applied Materials, Inc.

发明人： Kwan, Michael Chiu ,  Liu, Eric

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/517 ,  C23C16/52 ,  H01J37/32 ,  H01L21/316 ,  C23C16/44

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/4405 ,  C23C16/463 ,  C23C16/517 ,  C23C16/52 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3327 ,  H01J2237/3347 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/31608 ,  H01L21/31629 ,  Y10S438/911

摘要： A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap may be substantially 100% filled. Such filling is achieved by adjusting the flow rates of the precursor gases such that the deposition to sputtering ratio during the deposition phases is within certain predetermined limits.

摘要翻译： 公开了一种用于在具有至少大至6:1的纵横比的间隙中沉积电介质膜的方法和装置。 通过在沉积和蚀刻条件之间循环高密度 - 等离子体化学气相沉积系统的气体化学，该间隙可以基本上100％填充。 通过调节前体气体的流速来实现这种填充，使得在沉积阶段期间的沉积到溅射比在一定的预定限度内。

公开(公告)号：EP1182273A3

公开(公告)日：2004-01-07

申请号：EP01119361.2

申请日：2001-08-10

申请人： Applied Materials, Inc.

发明人： Kwan, Michael Chiu ,  Liu, Eric

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/517 ,  C23C16/52 ,  H01J37/32 ,  H01L21/316 ,  C23C16/44 ,  H01L21/768

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/4405 ,  C23C16/463 ,  C23C16/517 ,  C23C16/52 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3327 ,  H01J2237/3347 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/31608 ,  H01L21/31629 ,  Y10S438/911

摘要： A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap may be substantially 100% filled. Such filling is achieved by adjusting the flow rates of the precursor gases such that the deposition to sputtering ratio during the deposition phases is within certain predetermined limits.