公开(公告)号：EP2562798B1

公开(公告)日：2018-10-24

申请号：EP12190454.4

申请日：2007-05-23

申请人： Versum Materials US, LLC

发明人： Thridandam, Hareesh ,  Xiao, Manchao ,  Lei, Xinjian ,  Gaffney, Thomas Richard

IPC分类号： H01L21/316 ,  C23C16/40 ,  H01L21/314 ,  H01L21/02

CPC分类号： H01L21/31608 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/3145 ,  H01L21/31633

摘要： A silicon oxide layer is deposited on a substrate by chemical vapor deposition (CVD) by reacting an organoaminosilane precursor, selected from specified categories, with an oxidizing agent under conditions for the formation of a silicon oxide film. Diisopropylaminosilane is the preferred organoaminosilane precursor for the formation of the silicon oxide film.

公开(公告)号：EP2222889A1

公开(公告)日：2010-09-01

申请号：EP08848424.1

申请日：2008-10-30

申请人： HCF Partners, L.P.

发明人： DAMERON, Arrelaine

IPC分类号： C23C16/00

CPC分类号： C23C16/403 ,  C23C16/04 ,  C23C16/45525 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31616

摘要： The invention provides methods for selectively coating a substrate surface comprising a first and a second material with a thin film of a protective material using an atomic layer deposition process.

公开(公告)号：EP0757884B1

公开(公告)日：2009-08-05

申请号：EP96906308.0

申请日：1996-02-05

申请人： APPLIED MATERIALS, INC.

发明人： QIAN, Lingqian ,  SCHMIDT, Melvin C. ,  NOBINGER, Glenn L.

IPC分类号： H05H1/20 ,  H05H1/02 ,  H05H1/24 ,  C23C8/00 ,  C23C14/00 ,  B05D3/00 ,  C23C16/40 ,  H01L21/316

CPC分类号： H01L21/02131 ,  C23C8/28 ,  C23C8/36 ,  C23C16/401 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608

摘要： A method of forming a fluorinated silicon oxide dielectric layer (33) by plasma chemical vapor deposition. The method includes the steps of creating a plasma in a plasma chamber (10) and introducing a silicon-containing gas, a fluorine-containing gas, oxygen and an inert gas such that the gases are excited by the plasma and react proximate a substrate (16) to form a fluorinated silicon oxide layer on the surface of the substrate (16). The fluorinated layer so formed has a dielectric constant which is less than that of a silicon oxide layer.

公开(公告)号：EP1866963A2

公开(公告)日：2007-12-19

申请号：EP06740856.7

申请日：2006-04-07

申请人： Aviza Technology, Inc.

发明人： BARTHOLOMEW, Larry D ,  TREICHEL, Helmuth ,  OWYANG, Jon, S

IPC分类号： H01L23/58

CPC分类号： H01L21/3142 ,  C23C16/308 ,  C23C16/45523 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/3145 ,  H01L21/31604 ,  H01L21/31608 ,  H01L21/31637 ,  H01L21/31645 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： The present invention provides systems and methods for forming a multi-layer, multi-component high-k dielectric film. In some embodiments, the present invention provides systems and methods for forming high-k dielectric films that comprise hafnium, titanium, oxygen, nitrogen, and other components. In a further aspect of the present invention, the dielectric films are formed having composition gradients.

公开(公告)号：EP1564802A3

公开(公告)日：2007-02-28

申请号：EP05250353.9

申请日：2005-01-25

申请人： SHARP KABUSHIKI KAISHA

发明人： Takafuji, Yutaka ,  Itoga, Takashi

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L21/762 ,  H01L29/786

CPC分类号： H01L27/1266 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/76254 ,  H01L27/1214

摘要： A semiconductor device includes a substrate with an insulating surface and a single crystal semiconductor layer, which is bonded to the insulating surface of the substrate. The device further includes a first insulating layer, which is provided between the insulating surface of the substrate and the single crystal semiconductor layer, and a second insulating layer, which has been deposited on the entire insulating surface of the substrate except an area in which the first insulating layer is present.

公开(公告)号：EP1491655A2

公开(公告)日：2004-12-29

申请号：EP04014368.7

申请日：2004-06-18

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Mayorga, Steven Gerard ,  Xiao, Manchao ,  Gaffney, Thomas Richard ,  Syvret, Robert George

IPC分类号： C23C16/40 ,  H01L21/316

CPC分类号： C23C16/401 ,  C07F7/20 ,  C07F7/21 ,  C08K5/13 ,  C09D4/00 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/31608 ,  C08G77/04

摘要： The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a free radical scavenger polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a free radical scavenger polymerization inhibitor.

摘要翻译： 在电子材料制造中使用环氧四硅氧烷抑制用于氧化硅的化学气相沉积工艺中的聚合包括向环四硅氧烷提供自由基聚合抑制剂。 使电子材料制造中的氧化硅化学气相沉积工艺中所使用的环四硅氧烷稳定化，包括向式（I）的环四硅氧烷提供自由基聚合抑制剂。 R 1> -R 7 H，1-10C烷基或1-4C烷氧基。 还包括用于电子材料制造中用于氧化硅的化学气相沉积方法中使用的稳定聚合的环四硅氧烷的组合物的独立权利要求，其包含式（I）的环四硅氧烷和自由基清除剂聚合抑制剂。

公开(公告)号：EP0934433B1

公开(公告)日：2004-04-14

申请号：EP97906669.3

申请日：1997-02-20

申请人： LAM RESEARCH CORPORATION

发明人： DENISON, Dean, R. ,  LAM, James

IPC分类号： C23C16/30 ,  H01L21/02

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608

摘要： A process of preparing a moisture-resistant fluorine containing SiOx film includes steps of supplying reactant gases containing silicon, oxygen and fluorine into a process chamber and generating plasma in the process chamber, supporting a substrate on a substrate support in the process chamber and growing a fluorine-containing SiOx film on the substrate by contacting the substrate with the plasma while maintaining temperature of the film above 300 °C. The silicon and fluorine reactants can be supplied by separate gases such as SiH4 and SiF4 or as a single SiF4 gas and the oxygen reactant can be supplied by a pure oxygen gas. The SiH4 and SiF4 can be supplied in a ratio of SiH4(SiH4+SiF4) of no greater than 0.5. The process can provide a film with a fluorine content of 2-12 atomic percent and argon can be included in the plasma to assist in gap filling. The plasma can be a high density plasma produced in an ECR, TCP or ICP reactor and the substrate can be a silicon wafer including one or more metal layers over which the fluorine-containing SiOx film is deposited. The substrate support can include a gas passage which supplies a temperature control gas into a space between opposed surfaces of the substrate and the substrate support for maintaining the substrate at a desired temperature.

摘要翻译： 制备耐湿氟氧化硅膜的方法包括以下步骤：将含有硅，氧和氟的反应气体供应到处理室中，并在处理室中产生等离子体，将衬底支撑在处理室中的衬底支撑件上并生长 通过使基板与等离子体接触，同时将膜的温度保持在300℃以上，在基板上形成含氟氧化硅膜。硅和氟反应物可以由单独的气体例如SiH 4和SiF 4供给，或者作为单个SiF 4气体 并且氧反应物可以由纯氧气供应。 SiH4和SiF4可以以不大于0.5的SiH 4 /（SiH 4 + SiF 4）的气体流量比供应。 该方法可以提供氟含量为2-12原子％的膜，并且等离子体中可以包含氩气以辅助间隙填充。 等离子体可以是在ECR，TCP TM或ICP反应器中产生的高密度等离子体，并且衬底可以是包含一个或多个金属层的硅晶片，在其上沉积含氟氧化硅膜。 衬底支撑件可以包括气体通道，其将温度控制气体供应到衬底的相对表面和衬底支撑件之间的空间中，以将衬底保持在期望温度。

公开(公告)号：EP1182275B1

公开(公告)日：2004-02-25

申请号：EP01121929.2

申请日：1997-08-29

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Sugahara, Gaku ,  Aoi, Nobuo ,  Arai, Koji ,  Sawada, Kazuyuki

IPC分类号： C23C16/40 ,  C23C16/26 ,  C23C16/30 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/02126 ,  C23C16/26 ,  C23C16/30 ,  C23C16/401 ,  H01L21/0212 ,  H01L21/02131 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807

公开(公告)号：EP1182273A3

公开(公告)日：2004-01-07

申请号：EP01119361.2

申请日：2001-08-10

申请人： Applied Materials, Inc.

发明人： Kwan, Michael Chiu ,  Liu, Eric

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/517 ,  C23C16/52 ,  H01J37/32 ,  H01L21/316 ,  C23C16/44 ,  H01L21/768

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/4405 ,  C23C16/463 ,  C23C16/517 ,  C23C16/52 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3327 ,  H01J2237/3347 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/31608 ,  H01L21/31629 ,  Y10S438/911

摘要： A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap may be substantially 100% filled. Such filling is achieved by adjusting the flow rates of the precursor gases such that the deposition to sputtering ratio during the deposition phases is within certain predetermined limits.

公开(公告)号：EP1321469A1

公开(公告)日：2003-06-25

申请号：EP02028017.8

申请日：2002-12-13

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Mayorga, Steven Gerard ,  Xiao, Manchao ,  Gaffney, Thomas Richard

IPC分类号： C07F7/21

CPC分类号： C23C16/401 ,  C07F7/20 ,  C07F7/21 ,  C09D4/00 ,  H01L21/31608 ,  C08G77/04

摘要： The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a neutral to weakly acidic polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in. a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a neutral to weakly acidic polymerization inhibitor. A free radical scavenger can also be included in the process and composition.

摘要翻译： 本发明是 （a）用于稳定环四硅氧烷（例如1,3,5,7-四甲基环四硅氧烷）的方法，用于电子材料制造中用于氧化硅的化学气相沉积工艺中的聚合，包括提供有效量的中性至弱酸性聚合 这种环四硅氧烷的抑制剂; 和（b）在电子材料制造中作为氧化硅前体的化学气相沉积方法中使用的稳定化聚合的环四硅氧烷，例如1,3,5,7-四甲基环四硅氧烷的组合物，包括： 这种环四硅氧烷和中性至弱酸性聚合抑制剂。 自由基清除剂也可以包括在该过程和组合物中。