公开(公告)号：EP1711644A1

公开(公告)日：2006-10-18

申请号：EP04813250.0

申请日：2004-12-07

申请人： APPLIED MATERIALS, INC.

发明人： DING, Peijun ,  LUBBEN, Daniel, C. ,  HONG, Ilyoung, Richard ,  MILLER, Michael, Andrew ,  YANG, Hsien-Lung ,  RENGARAJAN, Suraj ,  SUNDARRAJAN, Arvind ,  YOUNG, Donny ,  ROSENSTEIN, Michael ,  LOWRANCE, Robert, B. ,  SANKARANARAYAN, Sreekrishnan ,  YOSHIDOME, Goichi

IPC分类号： C23C14/34

CPC分类号： C23C14/3407 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3455

摘要： A lift mechanism (124) for and a corresponding use of a magnetron (70) in a plasma sputter reactor (30). The magnetron rotating about the target axis (76) is controllably lifted away from the back of the target (34) to compensate for sputter erosion. The apparatus includes a drive source (84), housing (94), tank (118), water bath (116), fixed gear (92), drive plate (96), carrier (81), magnetic yoke (80), isolator (38). Adapter (36), shield (52), vacuum pump system (44), RF power supply (58), capacitive coupling circuit (60), gas source (46), mass flow controller (48), reactor wall (32), magnet ring (114), DC power supply (54), pedestal electrode (40), wafer (42), clamp ring (50), inner magnetic pole (74), outer pole (78), follower shaft (102), follower gear (100), idler gear (98), and planetary scanning mechanism (90).

公开(公告)号：EP3380643A1

公开(公告)日：2018-10-03

申请号：EP16869048.5

申请日：2016-11-03

申请人： Applied Materials, Inc.

发明人： LIU, Zhendong ,  HOU, Wenting ,  LEI, Jianxin ,  YOUNG, Donny ,  LU, William M.

IPC分类号： C23C14/56 ,  C23C14/34 ,  C23C14/50

CPC分类号： C23C4/134 ,  C23C14/34 ,  C23C14/564 ,  C23C16/4404 ,  C23C16/45525 ,  C23C16/50 ,  C23C18/1646 ,  C23C18/1689 ,  C23C18/31 ,  C23C18/48 ,  C25D3/02 ,  C25D5/48 ,  C25D7/00 ,  C25D17/00 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/3408 ,  H01J37/3441 ,  H01J37/3476

摘要： Implementations of the present disclosure relate to an improved shield for use in a processing chamber. In one implementation, the shield includes a hollow body having a cylindrical shape that is substantially symmetric about a central axis of the body, and a coating layer formed on an inner surface of the body. The coating layer is formed the same material as a sputtering target used in the processing chamber. The shield advantageously reduces particle contamination in films deposited using RF-PVD by reducing arcing between the shield and the sputtering target. Arcing is reduced by the presence of a coating layer on the interior surfaces of the shield.