公开(公告)号：EP1848838A2

公开(公告)日：2007-10-31

申请号：EP05817966.4

申请日：2005-11-07

申请人： Applied Materials, Inc.

发明人： LAVITSKY, Ilya ,  ROSENSTEIN, Michael ,  YOSHIDOME, Goichi ,  WANG, Hougong ,  LIU, Zhendong ,  YE, Mengqi

IPC分类号： C23C14/34

CPC分类号： H01J37/3408 ,  C23C14/35 ,  C23C14/352 ,  C23C14/564 ,  H01J37/32568 ,  H01J37/32733 ,  H01J37/3455

摘要： The invention relates to physical vapor deposition (PVD) chambers having a rotatable substrate pedestal (126). Embodiments of the invention facilitate deposition of highly uniform thin films. In further embodiments, one or more sputtering targets (118) are movably disposed above the pedestal (126). The orientation of the targets relative to the pedestal may be adjusted laterally, vertically or angularly. In one embodiment, the target may be adjusted between angles of about 0 to 45 degrees relative to an axis of pedestal rotation (126).

公开(公告)号：EP1828428A2

公开(公告)日：2007-09-05

申请号：EP05820892.7

申请日：2005-11-07

申请人： Applied Materials, Inc.

发明人： LAVITSKY, Ilya ,  ROSENSTEIN, Michael ,  YOSHIDOME, Goichi ,  WANG, Hougong ,  LIU, Zhendong ,  YE, Mengqi

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： H01J37/3408 ,  C23C14/35 ,  C23C14/352 ,  C23C14/564 ,  H01J37/32568 ,  H01J37/32733 ,  H01J37/3455

摘要： The invention relates to physical vapor deposition (PVD) chambers having a rotatable substrate pedestal (154) and at least one moveable tilted target (118). Embodiments of the invention facilitate deposition of highly uniform thin films.

公开(公告)号：EP3380643A1

公开(公告)日：2018-10-03

申请号：EP16869048.5

申请日：2016-11-03

申请人： Applied Materials, Inc.

发明人： LIU, Zhendong ,  HOU, Wenting ,  LEI, Jianxin ,  YOUNG, Donny ,  LU, William M.

IPC分类号： C23C14/56 ,  C23C14/34 ,  C23C14/50

CPC分类号： C23C4/134 ,  C23C14/34 ,  C23C14/564 ,  C23C16/4404 ,  C23C16/45525 ,  C23C16/50 ,  C23C18/1646 ,  C23C18/1689 ,  C23C18/31 ,  C23C18/48 ,  C25D3/02 ,  C25D5/48 ,  C25D7/00 ,  C25D17/00 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/3408 ,  H01J37/3441 ,  H01J37/3476

摘要： Implementations of the present disclosure relate to an improved shield for use in a processing chamber. In one implementation, the shield includes a hollow body having a cylindrical shape that is substantially symmetric about a central axis of the body, and a coating layer formed on an inner surface of the body. The coating layer is formed the same material as a sputtering target used in the processing chamber. The shield advantageously reduces particle contamination in films deposited using RF-PVD by reducing arcing between the shield and the sputtering target. Arcing is reduced by the presence of a coating layer on the interior surfaces of the shield.