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    LIGHT-EMITTING DIODE
    2.
    发明公开
    LIGHT-EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号：EP1622207A4

    公开(公告)日：2007-08-08

    申请号：EP04729225

    申请日：2004-04-23

    申请人： HOYA CORP

    发明人： KAWAZOE HIROSHI ,  ORITA MASAHIRO ,  YANAGITA HIROAKI ,  KOBAYASHI SATOSHI

    IPC分类号： H01L33/02 ,  H01S5/30 ,  H01S5/323

    CPC分类号： H01L33/025 ,  H01S5/3018 ,  H01S5/3027 ,  H01S5/32341

    摘要： A light-emitting diode with high luminous efficiency is disclosed which is free from deformation or defect of crystal caused by a dopant. The light-emitting diode emits no light of unnecessary wavelengths and has a wide selection of emission wavelengths. The light-emitting diode comprises a light-emitting layer composed of an ambipolar semiconductor containing no dopant, and an electron implanting electrode, namely an n electrode and a hole implanting electrode, namely a p electrode joined to the light-emitting layer.

    LIGHT-EMITTING DIODE
    3.
    发明公开
    LIGHT-EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号：EP1622207A1

    公开(公告)日：2006-02-01

    申请号：EP04729225.5

    申请日：2004-04-23

    申请人： HOYA CORPORATION

    发明人： KAWAZOE, Hiroshi ,  ORITA, Masahiro ,  YANAGITA, Hiroaki ,  KOBAYASHI, Satoshi

    IPC分类号： H01L33/00

    CPC分类号： H01L33/025 ,  H01S5/3018 ,  H01S5/3027 ,  H01S5/32341

    摘要： A light-emitting diode with high luminous efficiency is provided which is free from deformation or defects of a crystal caused by a dopant. The light-emitting diode emits no light of unnecessary wavelengths and has a wide selection of emission wavelengths. The light-emitting diode comprises a light-emitting layer made of an ambipolar semiconductor containing no dopant, and an electron implanting electrode, that is, an n-electrode and a hole implanting electrode, that is, a p-electrode joined to the light-emitting layer.

    摘要翻译： 提供了具有高发光效率的发光二极管，其没有由掺杂物引起的晶体变形或缺陷。 发光二极管不发射不必要的波长的光并且具有广泛的发射波长选择。 该发光二极管包括由不含掺杂剂的双极性半导体制成的发光层和电子注入电极，即，n电极和空穴注入电极，即与光接合的p电极 发射层。

    Carbon material originating from graphite and method of producing same
    4.
    发明公开
    Carbon material originating from graphite and method of producing same 失效
    Kohlenstoffmaterial，hergestellt aus Graphit，und Verfahren zur Herstellung desselben。

    公开(公告)号：EP0613130A1

    公开(公告)日：1994-08-31

    申请号：EP94301364.9

    申请日：1994-02-25

    申请人： NEC CORPORATION

    发明人： Ebbesen, Thomas, c/o NEC Corporation ,  Tanigaki, Katsumi, c/o NEC Corporation ,  Hiura, Hidefumi, c/o NEC Corporation

    IPC分类号： G11B9/00 ,  G01B7/34 ,  G01N27/00

    CPC分类号： H01S5/341 ,  B82B3/00 ,  C01B32/194 ,  C01B32/20 ,  C01B2204/00 ,  C01B2204/02 ,  D01F9/12 ,  G01Q80/00 ,  G11B9/1463 ,  G11B9/149 ,  H01L29/16 ,  H01L29/1602 ,  H01L51/0046 ,  H01L51/0048 ,  H01L51/0052 ,  H01S5/1042 ,  H01S5/3027 ,  Y10S977/70 ,  Y10S977/855 ,  Y10S977/858 ,  Y10T428/30

    摘要： A novel carbon material is obtained by bending at least one carbon atom layer of graphite in at least one selected region along either, or both, of lines I and II in Fig. 1. The bending can be accomplished by scanningly picking the carbon atom layer(s) with a probe of an atomic force microscope or another scanning microscope. The obtained carbon material has at least one round bend having a width of 0.1-10 nm and at least one flap region having a triangular, rectangular or still differently polygonal shape in plan view. When the carbon atom layer(s) is bent with very small radii of curvature, a finely striped ridge-and-groove structure appears in the round bend. The physical properties of the obtained carbon material are uniquely determined by the direction(s) of bending, width of each bend, shape and size of each flap region and the stripe pitch of the ridge-and-groove structure.

    摘要翻译： 通过在至少一个选定的区域中沿着图1中的线I和II的两者或两者弯曲至少一个石墨碳原子层来获得新的碳材料。 弯曲可以通过用原子力显微镜或另一扫描显微镜的探针扫描地采集碳原子层来实现。 所获得的碳材料具有至少一个具有0.1-10nm的宽度的圆形弯曲部和至少一个在平面图中具有三角形，矩形或仍然不同的多边形形状的折翼区域。 当碳原子层以非常小的曲率半径弯曲时，在圆形弯曲部分中出现细纹的脊 - 沟结构。 所获得的碳材料的物理性质由弯曲方向，每个弯曲的宽度，每个翼片区域的形状和尺寸以及脊 - 沟结构的条间距唯一地确定。

    TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES
    5.
    发明公开
    TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES 审中-公开
    VERFAHREN ZUR HERSTELLUNG VON OPTOELEKTRONISCHEN VORRICHTUNGEN

    公开(公告)号：EP2845220A4

    公开(公告)日：2015-12-23

    申请号：EP13784851

    申请日：2013-05-03

    申请人： SILICON GENESIS CORP

    发明人： HENLEY FRANCOIS J ,  KANG SIEN ,  LAMM ALBERT

    IPC分类号： H01L21/30 ,  C30B29/40 ,  C30B33/06 ,  H01L21/02 ,  H01L21/762 ,  H01L29/20

    CPC分类号： H01L33/0079 ,  C30B29/06 ,  C30B29/406 ,  C30B33/06 ,  H01L21/02005 ,  H01L21/76254 ,  H01L21/78 ,  H01L29/2003 ,  H01L31/028 ,  H01L31/03044 ,  H01L31/1804 ,  H01L31/1856 ,  H01L33/0054 ,  H01L33/32 ,  H01L33/34 ,  H01S5/3013 ,  H01S5/3027

    摘要： Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate are described. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise GaN; in other embodiments this bulk substrate may comprise (111) single crystal silicon. Then, a thin film or wafer of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. In certain embodiments this separated material is incorporated directly into an optoelectronic device, for example a GaN film cleaved from GaN bulk material. In some embodiments, this separated material may be employed as a template for further growth of semiconductor materials (e.g. GaN) that are useful for optoelectronic devices.

    摘要翻译： 描述了使用粒子加速器束从大块衬底形成材料薄膜的实施例。 在具体实施例中，具有顶表面的体基板暴露于加速颗粒束。 在某些实施方案中，该本体衬底可以包含GaN; 在其它实施例中，该体基底可以包括（111）单晶硅。 然后，通过沿着从光束注入的颗粒形成的切割区域进行受控的切割过程，将薄膜或薄片材料与本体基板分离。 在某些实施方案中，这种分离的材料直接并入光电器件，例如从GaN散装材料切割的GaN膜。 在一些实施方案中，该分离的材料可用作用于进一步生长用于光电子器件的半导体材料（例如GaN）的模板。

    TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES
    6.
    发明公开
    TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES 审中-公开
    形成光电子器件的技术

    公开(公告)号：EP2845220A1

    公开(公告)日：2015-03-11

    申请号：EP13784851.1

    申请日：2013-05-03

    申请人： Silicon Genesis Corporation

    发明人： HENLEY, Francois J. ,  KANG, Sien ,  LAMM, Albert

    IPC分类号： H01L21/30

    CPC分类号： H01L33/0079 ,  C30B29/06 ,  C30B29/406 ,  C30B33/06 ,  H01L21/02005 ,  H01L21/76254 ,  H01L21/78 ,  H01L29/2003 ,  H01L31/028 ,  H01L31/03044 ,  H01L31/1804 ,  H01L31/1856 ,  H01L33/0054 ,  H01L33/32 ,  H01L33/34 ,  H01S5/3013 ,  H01S5/3027

    摘要： Embodiments relate to use of a particle accelerator beam to form thin films of material from a bulk substrate are described. In particular embodiments, a bulk substrate having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise GaN; in other embodiments this bulk substrate may comprise (111) single crystal silicon. Then, a thin film or wafer of material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. In certain embodiments this separated material is incorporated directly into an optoelectronic device, for example a GaN film cleaved from GaN bulk material. In some embodiments, this separated material may be employed as a template for further growth of semiconductor materials (e.g. GaN) that are useful for optoelectronic devices.

    摘要翻译： 描述了实施例涉及使用粒子加速器束来形成来自块状衬底的材料的薄膜。 在特定实施例中，具有顶表面的体衬底暴露于加速粒子束。 在某些实施例中，该体衬底可以包括GaN; 在其他实施例中，该体衬底可以包括（111）单晶硅。 然后，通过沿着由从所述束注入的粒子形成的解理区域执行受控劈裂过程，将薄膜或晶片材料从所述块衬底分离。 在某些实施例中，将该分离的材料直接结合到光电子器件中，例如从GaN大块材料切割的GaN膜。 在一些实施例中，这种分离的材料可以用作用于进一步生长可用于光电子器件的半导体材料（例如GaN）的模板。

    VERFAHREN ZUM ABSCHEIDEN EINER KRISTALLSCHICHT BEI NIEDRIGEN TEMPERATUREN, INSBESONDERE EINER PHOTOLUMINESZIERENDEN IV-IV-SCHICHT AUF EINEM IV-SUBSTRAT, SOWIE EIN EINE DERARTIGE SCHICHT AUFWEISENDES OPTOELEKTRONISCHES BAUELEMENT
    9.
    发明公开
    VERFAHREN ZUM ABSCHEIDEN EINER KRISTALLSCHICHT BEI NIEDRIGEN TEMPERATUREN, INSBESONDERE EINER PHOTOLUMINESZIERENDEN IV-IV-SCHICHT AUF EINEM IV-SUBSTRAT, SOWIE EIN EINE DERARTIGE SCHICHT AUFWEISENDES OPTOELEKTRONISCHES BAUELEMENT 审中-公开
    METHOD FOR晶体层在低温下，特别是光致发光的IV-IV层上的IV SUBSTRATE AND SUCH表现出光电子器件的层分离

    公开(公告)号：EP3155145A1

    公开(公告)日：2017-04-19

    申请号：EP15726035.7

    申请日：2015-05-18

    申请人： Forschungszentrum Jülich GmbH

    发明人： GRÜTZMACHER, Detlev ,  WIRTHS, Stephan ,  BUCA, Dan Mihai ,  MANTL, Siegfried

    IPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/52 ,  C30B29/40 ,  C30B29/48 ,  C23C16/455 ,  H01L21/02

    CPC分类号： C30B25/10 ,  C09K11/66 ,  C30B25/02 ,  C30B25/183 ,  C30B29/10 ,  C30B29/52 ,  C30B29/68 ,  G02B6/12 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0262 ,  H01L31/02322 ,  H01S5/021 ,  H01S5/042 ,  H01S5/3027 ,  H01S5/3054

    摘要： The invention relates to a method for monolithically depositing a monocrystalline IV-IV layer that glows when excited and that is composed of a plurality of elements of the IV main group, in particular a GeSn or Si-GeSn layer, said IV-IV layer having a dislocation density less than 6 cm
    -2 , on an IV substrate, in particular a silicon or germanium substrate, comprising the following steps: providing a hydride of a first IV element (A), such as Ge
    2 H
    6 or Si
    2 H
    6 ; providing a halide of a second IV element (B), such as SnCl
    4 ; heating the substrate to a substrate temperature that is less than the decomposition temperature of the pure hydride or of a radical formed therefrom and is sufficiently high that atoms of the first element (A) and of the second element (B) are integrated into the surface in crystalline order, wherein the substrate temperature lies, in particular, in a range between 300°C and 475°C; producing a carrier gas flow of an inert carrier gas, in particular N
    2 , Ar, He, which in particular is not H
    2 ; transporting the hydride and the halide and decomposition products arising therefrom to the surface at a total pressure of at most 300 mbar; depositing the IV-IV layer, or a layer sequence consisting of IV-IV layers of the same type, having a thickness of at least 200 nm, wherein the deposited layer is, in particular, a Si
    y Ge
    1
    -x-y Sn layer, with x > 0.08 and y ≤ 1.

    摘要翻译： 一种用于单片沉积单晶IV-IV层做发光激发时，也由所述IV主族元素中的多个方法，特别是GeSn或Si GeSn层，具有的位错密度的IV-IV层少 超过6厘米2，在上基片IV，特别是硅或锗的衬底，其包括以下步骤：提供第一元件IV（A）的氢化物：如Ge2H6或乙硅烷; 提供第二IV族元素（B）,:如四氯化锡的卤化物; 加热该基材至基材温度并低于从形成在那里的纯氢化的或自由基的分解温度和足够高做的第一元件（A）的原子和所述第二元件（B）的被集成到表面 在晶序，worin基板温度读取，特别是在300℃和475℃之间的范围内。 产生的惰性载气的载气流量，特别是N 2，氩，氦，其中特定不H3; 输送氢化物和卤化物和分解产物所产生从那里到在300毫巴的总压的表面上; 沉积IV-IV层，或由相同类型的IV-IV层的层序列，其厚度至少为200nm，worin沉积层，特别地，一个SiyGe1-X-YSN层，其中x > 0:08和y≦第一