公开(公告)号：EP2064728A2

公开(公告)日：2009-06-03

申请号：EP07838158.9

申请日：2007-09-13

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： VANDERBERG, Bo ,  RATHMELL, Robert ,  EISNER, Edward

IPC: H01J37/317 ,  H01J37/147

CPC classification number: H01J37/026 ,  H01J37/1475 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/055

Abstract: A magnetic scanner (400) employs constant magnetic fields to mitigate zero field effects. The scanner includes an upper pole piece (402) and a lower pole piece (404) that generate an oscillatory time varying magnetic field across a path of an ion beam (406) and deflect the ion beam in a scan direction. A set of entrance magnets (410a, b) are positioned about an entrance of the scanner and generate a constant entrance magnetic field across the path of the ion beam. A set of exit magnets (412a, b) are positioned about an exit of the scanner and generate a constant exit magnetic field across the path of the ion beam. The scanner (400) may also include cusp magnets (414, 416), mitigate the loss of electrons within the scanner.

公开(公告)号：EP1955352A2

公开(公告)日：2008-08-13

申请号：EP06838058.3

申请日：2006-11-17

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： RATHMELL, Robert ,  VANDERBERG, Bo

IPC: H01J37/244 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24578 ,  H01J2237/31703

Abstract: One or more aspects of the present invention pertain to a measurement component (502) that facilitates determining a relative orientation between an ion beam(504) and a workpiece (512). The measurement component is sensitive to ion radiation and allows a relative orientation between the measurement component and the ion beam to be accurately determined by moving the measurement component relative to the ion beam. The measurement component is oriented at a known relationship relative to the workpiece so that a relative orientation between the workpiece and beam can be established. Knowing the relative orientation between the ion beam and workpiece allows the workpiece to be oriented to a specific angle relative to the measured beam angle for more accurate and precise doping of the workpiece, which enhances semiconductor fabrication.

公开(公告)号：EP1636821A2

公开(公告)日：2006-03-22

申请号：EP04776770.2

申请日：2004-06-18

Applicant: Axcelis Technologies, Inc.

Inventor： RATHMELL, Robert ,  BENVENISTE, Victor

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/12

Abstract: A lens structure for use with an ion beam implanter. The lens structure includes first and second electrodes spaced apart along a direction of ion movement. The lens structure extends on opposite sides of a beam path across a width of the ion beam for deflecting ions entering the lens structure. The lens structure include a first electrode for decelerating ions and a second electrode for accelerating the ions to cause ions entering the lens structure to exit said lens structure with approximately the same exit trajectory regardless of the trajectory ions enter the lens structure. In an alternate construction the lens structure can include a first electrode for accelerating ions and a second electrode for decelerating ions.

公开(公告)号：EP1634316A2

公开(公告)日：2006-03-15

申请号：EP04755134.6

申请日：2004-06-14

Applicant: Axcelis Technologies, Inc.

Inventor： BENVENISTE, Victor ,  RATHMELL, Robert ,  HUANG, Yougzhang

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/147 ,  H01J2237/057

Abstract: A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination. Plasma may be introduced for reducing space charge.

公开(公告)号：EP1955357A1

公开(公告)日：2008-08-13

申请号：EP06838009.6

申请日：2006-11-17

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： RATHMELL, Robert ,  KAMENISTA, Dennis

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/1501 ,  H01J2237/24528 ,  H01J2237/24578

Abstract: One or more aspects of the present invention pertain to determining a relative orientation between an ion beam and lattice structure of a workpiece into which ions are to be selectively implanted by the ion beam, and calibrating an ion implantation system in view of the relative orientation. The beam to lattice structure orientation is determined, at least in part, by directing a divergent ion beam at the workpiece and finding the angle of the aspect of the divergent beam that implants ions substantially parallel to crystal planes of the workpiece, and thus causes a small amount of damage to the lattice structure.

Abstract translation: 本发明的一个或多个方面涉及确定离子束将被离子束选择性注入其中的工件的离子束和晶格结构之间的相对取向，并且考虑到相对取向来校准离子注入系统。 至少部分地通过在工件上引导发散离子束并且发现将离子基本上平行于工件的晶面地注入的发散束的方面的角度来确定束至晶格结构取向，并且因此导致 对晶格结构的损伤量很小。

公开(公告)号：EP1894222A1

公开(公告)日：2008-03-05

申请号：EP05810211.2

申请日：2005-06-06

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： RATHMELL, Robert

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/05

CPC classification number: H01J37/3171 ,  H01J37/05

Abstract: An ion implantation system (600) having a dose cup (634) located near a final energy bend of a scanned or ribbon-like ion beam of a serial ion implanter for providing an accurate ion current measurement associated with the dose of a workpiece or wafer. The system comprises an ion implanter having an ion beam source for producing a ribbon-like ion beam (602). The system further comprises an AEF system configured to filter an energy of the ribbon-like ion beam by bending the beam at a final energy bend. The AEF system further comprises an AEF dose cup associated with the AEF system and configured to measure ion beam current, the cup located substantially immediately following the final energy bend. An end station (610) downstream of the AEF system is defined by a chamber wherein a workpiece is secured in place for movement relative to the ribbon-like ion beam for implantation of ions therein. The AEF dose cup is beneficially located up stream of the end station near the final energy bend mitigating pressure variations due to outgassing from implantation operations at the workpiece. Thus, the system provides accurate ion current measurement before such gases can produce substantial quantities of neutral particles in the ion beam, generally without the need for pressure compensation. Such dosimetry measurements may also be used to affect scan velocity to ensure uniform closed loop dose control in the presence of beam current changes from the ion source and outgassing from the workpiece.

Abstract translation: 具有位于串联离子注入机的扫描或带状离子束的最终能量弯曲附近的剂量杯（634）的离子注入系统（600），用于提供与工件或晶片的剂量相关的精确离子电流测量 。 该系统包括具有用于产生带状离子束的离子束源的离子注入机（602）。 该系统还包括AEF系统，该AEF系统被配置成通过在最终能量弯曲处弯曲该束来过滤带状离子束的能量。 AEF系统还包括AEF剂量杯，其与AEF系统相关联并且被配置为测量离子束电流，该杯位于基本紧随最终能量弯曲之后。 AEF系统下游的终端站（610）由腔室限定，其中工件被固定就位以相对于带状离子束移动以在其中植入离子。 AEF剂量杯有利地位于最终能量弯曲附近的终端站的上游，从而减轻了由于工件上的植入操作的排气而导致的压力变化。 因此，该系统在这些气体能够在离子束中产生大量中性粒子之前提供精确的离子电流测量，通常不需要压力补偿。 这种剂量测量也可用于影响扫描速度以确保在来自离子源的束电流变化和来自工件的排气存在的情况下均匀闭环剂量控制。

公开(公告)号：EP1774559A2

公开(公告)日：2007-04-18

申请号：EP05775795.7

申请日：2005-07-19

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： RATHMELL, Robert ,  BENVENISTE, Victor

IPC: H01J37/12 ,  H01J37/317

CPC classification number: H01J37/12 ,  H01J37/3171

Abstract: A lens structure for use with an ion beam implanter. The lens structure includes first and second electrodes spaced apart along a direction of ion movement. The lens structure extends across a width of the ion beam for deflecting ions entering the lens structure. The lens structure includes a first electrode for decelerating ions and a second electrode for accelerating the ions. A lens structure mode controller selectively activates either the accelerating or decelerating electrode to cause ions entering the lens structure to exit said lens structure with a desired trajectory regardless of the trajectory ions enter the lens structure.

公开(公告)号：EP1597748A2

公开(公告)日：2005-11-23

申请号：EP04713444.0

申请日：2004-02-20

Applicant: Axcelis Technologies, Inc.

Inventor： RATHMELL, Robert ,  VANDERBERG, Bo

IPC: H01J37/30 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/1472

Abstract: An accelerating structure and related method for accelerating/decelerating ions of an ion beam are disclosed. The structure and related method are suitable for use in selectively implanting ions into a workpiece or wafer during semiconductor fabrication to selectively dope areas of the wafer. In addition to accelerating and/or decelerating ions, aspects of the present invention serve to focus as well as to deflect ions of an ion beam. This is accomplished by routing the ion beam through electrodes having potentials developed thereacross. The ion beam is also decontaminated as electrically neutral contaminants within the beam are not affected by the potentials and continue on generally traveling along an original path of the ion beam. The electrodes are also arranged in such a fashion so as to minimize the distance the beam has to travel, thereby mitigating the opportunity for beam blow up.

公开(公告)号：EP1634316B1

公开(公告)日：2011-11-23

申请号：EP04755134.6

申请日：2004-06-14

Applicant: Axcelis Technologies, Inc.

Inventor： BENVENISTE, Victor ,  RATHMELL, Robert ,  HUANG, Yougzhang

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/147 ,  H01J2237/057

Abstract: A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination. Plasma may be introduced for reducing space charge.

公开(公告)号：EP1955357B1

公开(公告)日：2011-07-06

申请号：EP06838009.6

申请日：2006-11-17

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： RATHMELL, Robert ,  KAMENISTA, Dennis

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/1501 ,  H01J2237/24528 ,  H01J2237/24578

Abstract: One or more aspects of the present invention pertain to determining a relative orientation between an ion beam and lattice structure of a workpiece into which ions are to be selectively implanted by the ion beam, and calibrating an ion implantation system in view of the relative orientation. The beam to lattice structure orientation is determined, at least in part, by directing a divergent ion beam at the workpiece and finding the angle of the aspect of the divergent beam that implants ions substantially parallel to crystal planes of the workpiece, and thus causes a small amount of damage to the lattice structure.