公开(公告)号：EP2580303A1

公开(公告)日：2013-04-17

申请号：EP11792023.1

申请日：2011-06-01

Applicant: BASF SE

Inventor： FERSTL, Berthold ,  BRAUN, Simon ,  FEßENBECKER, Achim

IPC: C09K13/00 ,  C11D7/34 ,  C11D7/36 ,  C23F1/24 ,  H01L21/461

CPC classification number: H01L31/1804 ,  C09K13/00 ,  C09K13/06 ,  C11D7/3209 ,  C11D7/34 ,  C11D7/36 ,  C11D11/0047 ,  H01L21/306 ,  H01L21/30604 ,  Y02E10/547 ,  Y02P70/521

Abstract: An aqueous alkaline etching and cleaning composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-soluble acids and their water-soluble salts of the general formulas (I) to (V): (R1—S03-)nXn+ (I), R—P032−(Xn+)3-n (II); (RO—S03-)nXn+ (III), RO—P032−(Xn+)3-n, (IV), and [(RO)2P02−]nXn+ (V); wherein the n=1 or 2; X is hydrogen or alkaline or alkaline-earth metal; the variable R1 is an olefinically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; the use of the composition for treating silicon substrates, a method for treating the surface of silicon substrates, and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.

公开(公告)号：EP3717609A1

公开(公告)日：2020-10-07

申请号：EP18810989.6

申请日：2018-11-26

Applicant: BASF SE

Inventor： CHOU, I Chen ,  KLIPP, Andreas ,  FERSTL, Berthold

IPC: C11D1/835 ,  C11D11/00 ,  C11D1/83 ,  G03F7/40

公开(公告)号：EP2149148A1

公开(公告)日：2010-02-03

申请号：EP08750228.2

申请日：2008-05-09

Applicant: BASF SE

Inventor： FERSTL, Berthold ,  KÜHNER, Andreas

IPC: H01L21/02

CPC classification number: H01L21/02071 ,  G03F7/423 ,  H01L21/02063

Abstract: A method for cleaning structured surfaces of semiconductor components to remove photoresist and etching residues after the etching of the surface, comprising: a) treatment of the surface with an acidic aqueous solution comprising one or more acids and one or more oxidizing agents, b) removal of the photoresist and c) washing with demineralized water in the stated sequence.

公开(公告)号：EP2580303B1

公开(公告)日：2018-08-29

申请号：EP11792023.1

申请日：2011-06-01

Applicant: BASF SE

Inventor： FERSTL, Berthold ,  BRAUN, Simon ,  FEßENBECKER, Achim

IPC: C11D7/34 ,  C11D7/36 ,  C11D7/32 ,  C11D11/00 ,  H01L21/306 ,  H01L21/461 ,  H01L31/18

CPC classification number: H01L31/1804 ,  C09K13/00 ,  C09K13/06 ,  C11D7/3209 ,  C11D7/34 ,  C11D7/36 ,  C11D11/0047 ,  H01L21/306 ,  H01L21/30604 ,  Y02E10/547 ,  Y02P70/521

Abstract: An aqueous alkaline etching and cleaning composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-soluble acids and their water-soluble salts of the general formulas (I) to (V): (R1—S03-)nXn+ (I), R—P032−(Xn+)3-n (II); (RO—S03-)nXn+ (III), RO—P032−(Xn+)3-n, (IV), and [(RO)2P02−]nXn+ (V); wherein the n=1 or 2; X is hydrogen or alkaline or alkaline-earth metal; the variable R1 is an olefinically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; the use of the composition for treating silicon substrates, a method for treating the surface of silicon substrates, and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.

公开(公告)号：EP2149147A1

公开(公告)日：2010-02-03

申请号：EP08750227.4

申请日：2008-05-09

Applicant: BASF SE

Inventor： FERSTL, Berthold ,  KÜHNER, Andreas

IPC: H01L21/02

CPC classification number: H01L21/02063 ,  H01L21/02071

Abstract: A method for cleaning structured surfaces of semiconductor components to remove photoresist and etching residues after the etching of the surface, comprising: a) removal of the photoresist, b) treatment of the surface with an acidic aqueous solution comprising one or more acids and one or more oxidizing agents, c) treatment of the surface with an alkaline aqueous solution and d) washing of the surface with demineralized water, the steps a), b) and c) being effected before step d).

Abstract translation: 1。一种用于清洁半导体部件的结构化表面以在表面蚀刻之后去除光刻胶和蚀刻残余物的方法，包括：a）去除光致抗蚀剂，b）用包含一种或多种酸和一种或多种酸的酸性水溶液处理表面，或者 更多的氧化剂，c）用碱性水溶液处理表面，和d）用软化水洗涤表面，步骤a），b）和c）在步骤d）之前进行。