COMPOSITION AND METHOD FOR TREATING WATER SYSTEMS
    4.
    发明公开
    COMPOSITION AND METHOD FOR TREATING WATER SYSTEMS 审中-公开
    ZUSAMMENSETZUNG UND VERFAHREN ZUR BEHANDLUNG VON WASSERSYSTEMEN

    公开(公告)号:EP3065889A4

    公开(公告)日:2017-05-03

    申请号:EP14859612

    申请日:2014-11-05

    申请人: NCH CORP

    摘要: A solid composition for treating cooling or heated water systems to remove scale, microorganisms and biofilm, and corrosion by-products. The composition for cooling towers and chilled water systems comprises chelating agents and an anionic surfactant. The composition for boilers and heated water systems comprises a sulfite, neutralizing amines, sodium phosphate, and, optionally, a polymethacrylate or polyacrylate polymer. A method for using such a treatment composition comprises contacting the treatment composition with substantially all parts of the water system.

    摘要翻译: 用于处理冷却或加热水系统以除去水垢,微生物和生物膜以及腐蚀副产物的固体组合物。 用于冷却塔和冷水系统的组合物包含螯合剂和阴离子表面活性剂。 用于锅炉和热水系统的组合物包含亚硫酸盐,中和胺,磷酸钠和任选的聚甲基丙烯酸酯或聚丙烯酸酯聚合物。 使用这种处理组合物的方法包括使处理组合物与水体系的基本上所有部分接触。

    CLEANING AGENT FOR SEMICONDUCTOR SUBSTRATES AND METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE SURFACE
    6.
    发明公开
    CLEANING AGENT FOR SEMICONDUCTOR SUBSTRATES AND METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE SURFACE 有权
    清洁剂用于半导体基板和方法用于处理半导体衬底的表面

    公开(公告)号:EP3051577A1

    公开(公告)日:2016-08-03

    申请号:EP14859390.8

    申请日:2014-11-07

    摘要: The present invention relates to a cleaning agent for a semiconductor substrate having a copper wiring film or a copper alloy wiring film, and a cobalt-containing film to be used in a post-process of a chemical mechanical polishing process, comprising (A) an organic acid represented by general formula described in the present specification, (B) amines selected from the group consisting of (B-1) diamines, (B-2) amidines, (B-3) azoles, and (B-4) pyrazines or pyrimidines, represented by general formulae described in the present specification, (C) a hydroxylamine derivative, and (D) an oxygen scavenger represented by general formula described in the present specification, and being an aqueous solution having a pH of 10 or higher; and a processing method for the surface of a semiconductor substrate, having a copper wiring film or a copper alloy wiring film, and a cobalt-containing film, which comprises using the cleaning agent.

    摘要翻译: 本发明涉及一种清洗剂具有铜布线的电影或铜合金布线的电影,和一个半导体基片的薄膜,以在化学机械抛光工艺的后处理中使用,其包括含钴的(A) 通过在本说明书中描述的通式表示的有机羧酸,选自下组的(B-1)二胺,(B-2)脒,(B-3)唑类,和(B-4)吡嗪选择(B)cardamines 或嘧啶,由通式本说明书中记载的,(C)羟胺衍生物,和(D)表示由本说明书中所述通式中,并且是pH为10或更高的水溶液代表除氧剂; 和用于半导体基板的表面处理方法中,具有铜布线的电影或铜合金布线的电影,和含钴的电影,该方法包括使用该清洗剂。