公开(公告)号：EP1934133A1

公开(公告)日：2008-06-25

申请号：EP05791165.3

申请日：2005-10-10

Applicant: Silverbrook Research Pty. Ltd

Inventor： SILVERBROOK, Kia

IPC: B81C1/00 ,  B41J2/05 ,  B41J2/16

CPC classification number: B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B41J2002/14475 ,  B41J2202/11 ,  B81B2201/032 ,  B81B2201/052 ,  B81B2203/0109 ,  B81C1/00611 ,  B81C2201/0108 ,  B81C2201/0126

Abstract: A method of forming a suspended beam in a MEMS process is disclosed. In the process a pit (8) is etched into a substrate (5). Sacrificial material (10) is deposited in the pit (8) and on the surrounding substrate surface. The sacrificial material (10) is then removed from the surrounding substrate surface and from the periphery of the pit (8) so that there is a gap between the sacrificial material and at least two sidewalls of the pit. The sacrificial material is then heated so that it reftows such that the remaining sacrificial material contacts the sidewalls of the pit. Material for the beam (12), which is typically a metal, is then deposited on the substrate surface and the reflowed sacrificial material, and the sacrificial material is then removed to form the suspended beam. The beam could be used as the heating element in an inkjet printer.

公开(公告)号：EP2852644A1

公开(公告)日：2015-04-01

申请号：EP13794728.9

申请日：2013-05-21

Applicant: BASF SE

Inventor： NOLLER, Bastian Marten ,  GILLOT, Christophe ,  FRANZ, Diana ,  LI, Yuzhuo

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/306

CPC classification number: C09G1/02 ,  B81C2201/0121 ,  B81C2201/0123 ,  B81C2201/0126 ,  H01L21/02024 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/461

Abstract: A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one lll-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.

公开(公告)号：EP1535315A1

公开(公告)日：2005-06-01

申请号：EP03775135.1

申请日：2003-08-22

Applicant: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DERANGEWANDTEN FORSCHUNG E.V.

Inventor： QUENZER, Hans-Joachim ,  SCHULZ, Arne, Veit ,  MERZ, Peter

IPC: H01L21/20 ,  B81C1/00 ,  C03B19/02 ,  C03B23/02

CPC classification number: B81C1/00611 ,  B81C2201/0126 ,  C03B19/02 ,  C03B23/02

Abstract: Disclosed is a method for structuring a planar substrate made of a glass-type material, which is characterized by the following steps: - the thickness of the planar semiconductor substrate is reduced within at least one surface area thereof so as to obtain a surface area that is raised relative to the surface areas having a reduced thickness; - the raised surface area of the planar semiconductor substrate is structured by locally removing material in a mechanical manner so as to introduce recesses within the raised surface area; - the structured surface of the planar semiconductor substrate is connected to the glass-type planar substrate such that the glass-type planar substrate at least partly covers the surface area having a reduced thickness; - the connected planar substrates are heated up such that the glass-type planar substrate which covers the surface area having a reduced thickness forms a fluid-tight connection along with the surface area having a reduced thickness in a first heating phase which is carried out at negative pressure conditions, the planar substrate covering the recesses in a fluid-tight manner at negative pressure conditions, whereupon at least some areas of the glass-type material flow into the recesses of the structured surface of the planar semiconductor substrate in a second heating phase. Also disclosed are a glass-type planar substrate and the use thereof.

公开(公告)号：EP3094592A1

公开(公告)日：2016-11-23

申请号：EP14800066.4

申请日：2014-11-20

Applicant: Robert Bosch GmbH

Inventor： LUTZ, Theresa ,  HEUCK, Friedjof

IPC: B81C1/00

CPC classification number: B81C1/00595 ,  B81C1/00611 ,  B81C2201/0126 ,  B81C2201/0132 ,  B81C2201/0133

Abstract: The invention relates to a production method for a micromechanical part, comprising at least the following steps: forming a main structure (10) of at least one component of the micromechanical part from at least one crystalline layer (12) of a substrate by means of a crystal orientation-independent etching step, and etching at least one area (18) in a defined crystal plane (20) away on the main structure (10) of the at least one component by means of a crystal orientation-dependent etching step. For said crystal orientation-dependent etching step, the defined crystal plane (20) in respect of which the at least one area (18) etched away on the main structure (10) is oriented is the crystal plane that features the lowest etching rate of all crystal planes. The invention further relates to a micromechanical part.

公开(公告)号：EP2852644A4

公开(公告)日：2016-04-06

申请号：EP13794728

申请日：2013-05-21

Applicant: BASF SE

Inventor： NOLLER BASTIAN MARTEN ,  GILLOT CHRISTOPHE ,  FRANZ DIANA ,  LI YUZHUO

IPC: H01L21/306 ,  C09G1/02

CPC classification number: C09G1/02 ,  B81C2201/0121 ,  B81C2201/0123 ,  B81C2201/0126 ,  H01L21/02024 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/461

公开(公告)号：EP1934133A4

公开(公告)日：2012-09-26

申请号：EP05791165

申请日：2005-10-10

Applicant: SILVERBROOK RES PTY LTD

Inventor： SILVERBROOK KIA

IPC: B81C1/00 ,  B41J2/05 ,  B41J2/14 ,  B41J2/16

CPC classification number: B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B41J2002/14475 ,  B41J2202/11 ,  B81B2201/032 ,  B81B2201/052 ,  B81B2203/0109 ,  B81C1/00611 ,  B81C2201/0108 ,  B81C2201/0126

公开(公告)号：EP1535315B1

公开(公告)日：2010-11-24

申请号：EP03775135.1

申请日：2003-08-22

Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

Inventor： QUENZER, Hans-Joachim ,  SCHULZ, Arne, Veit ,  MERZ, Peter

IPC: H01L21/20 ,  B81C1/00 ,  C03B19/02 ,  C03B23/02

CPC classification number: B81C1/00611 ,  B81C2201/0126 ,  C03B19/02 ,  C03B23/02

Abstract: Disclosed is a method for structuring a planar substrate made of a glass-type material, which is characterized by the following steps: - the thickness of the planar semiconductor substrate is reduced within at least one surface area thereof so as to obtain a surface area that is raised relative to the surface areas having a reduced thickness; - the raised surface area of the planar semiconductor substrate is structured by locally removing material in a mechanical manner so as to introduce recesses within the raised surface area; - the structured surface of the planar semiconductor substrate is connected to the glass-type planar substrate such that the glass-type planar substrate at least partly covers the surface area having a reduced thickness; - the connected planar substrates are heated up such that the glass-type planar substrate which covers the surface area having a reduced thickness forms a fluid-tight connection along with the surface area having a reduced thickness in a first heating phase which is carried out at negative pressure conditions, the planar substrate covering the recesses in a fluid-tight manner at negative pressure conditions, whereupon at least some areas of the glass-type material flow into the recesses of the structured surface of the planar semiconductor substrate in a second heating phase. Also disclosed are a glass-type planar substrate and the use thereof.

公开(公告)号：EP2147462A2

公开(公告)日：2010-01-27

申请号：EP08725768.9

申请日：2008-02-19

Applicant: Mallinckrodt Baker, Inc.

Inventor： KIM, Sang In ,  HONG, Seong Jin

IPC: H01L21/311 ,  H01L21/3213 ,  C09K13/02

CPC classification number: B81C1/00611 ,  B81C2201/0126 ,  C09K13/02 ,  H01L21/32134 ,  H01L29/6675

Abstract: A highly aqueous, strongly basic planarizing solution and a process for its use to reducing or essentially eliminating protrusions or projections extending generally upwardly from a generally planar surface of polysilicon film produced by Low Temperature Poly Si (LTPS) annealing a film of amorphous silicon deposited on a substrate; the process including contacting the surface of the generally planar polysilicon film with the highly aqueous, strongly basic solution for a time sufficient to selectively etch the protrusions or projections from the surface of the generally planar polysilicon film without any significant etching of the generally planar polysilicon film, said highly aqueous, strongly basic solution being a solution having a pH of 12 or higher and comprising water, at least one strong base, and at least one etch rate control agent.