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1.发明公开AQUEOUS POLISHING COMPOSITIONS CONTAINING N-SUBSTITUTED DIAZENIUM DIOXIDES AND/OR N'-HYDROXY-DIAZENIUM OXIDE SALTS 审中-公开WÄSSRIGEREINIGUNGSZUSAMMENSETZUNGEN MIT N-SUBSTITUIERTEN DIAZENIUMDIOXIDEN UND / ODER N'-HYDROXY-DIAZENIUM-OXIDSALZEN
公开(公告)号：EP2614122A4
公开(公告)日：2014-01-15
申请号：EP11823140
申请日：2011-09-06
Applicant: BASF SE
Inventor： NOLLER BASTIAN , FRANZ DIANA , LI YUZHUO , USMAN IBRAHIM SHEIK ANSAR , PINDER HARVEY WAYNE , VENKATARAMAN SHYAM SUNDAR
IPC: C09G1/02 , H01L21/3105
CPC classification number: C09K13/00 , C09G1/02 , C09K3/1463 , H01L21/31053
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2.发明公开A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING TWO TYPES OF CORROSION INHIBITORS 有权成分用于化学机械抛光（CMP）带双缓蚀剂的类型
公开(公告)号：EP2688966A4
公开(公告)日：2014-11-12
申请号：EP12760432
申请日：2012-03-19
Applicant: BASF SE
Inventor： NOLLER BASTIAN , LAUTER MICHAEL , SUGIHARTO ALBERT BUDIMAN , LI YUZHUO , RUSHING KENNETH , FRANZ DIANA , BÖHN ROLAND , GAO NING
IPC: C09G1/02 , H01L21/321
CPC classification number: H01L21/3212 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/30625
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3.发明公开A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING (CMP) OF III-V MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC NON-IONIC SURFACTANT 审中-公开PROCESS用于产生具有化学机械抛光（CMP）的III-V材料的存在CMP组合物的半导体元件与特定的，非离子表面活性
公开(公告)号：EP2852644A4
公开(公告)日：2016-04-06
申请号：EP13794728
申请日：2013-05-21
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , GILLOT CHRISTOPHE , FRANZ DIANA , LI YUZHUO
IPC: H01L21/306 , C09G1/02
CPC classification number: C09G1/02 , B81C2201/0121 , B81C2201/0123 , B81C2201/0126 , H01L21/02024 , H01L21/302 , H01L21/304 , H01L21/30625 , H01L21/3212 , H01L21/461
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公开(公告)号：EP2847785A4
公开(公告)日：2016-03-16
申请号：EP13788644
申请日：2013-04-29
Applicant: BASF SE
Inventor： FRANZ DIANA , NOLLER BASTIAN MARTEN
IPC: H01L21/306 , C09G1/02 , C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/02024 , H01L21/30625
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