Abstract:
The present invention relates to semiconducting compounds, materials prepared from such compounds, methods of preparing such compounds and semiconductor materials, as well as various compositions, composites, and devices that incorporate the compounds and semiconductor materials. The semiconducting compounds can have higher electron-transport efficiency and higher solubility in common solvents compared to related representative compounds.
Abstract:
Provided are semiconductors prepared from an enantiomerically enriched mixture of a nitrogen-functionalized rylene bis(dicarboximide) compound. Specifically, the enantiomerically enriched mixture has unexpected electron-transport efficiency compared to the racemate or either of the enantiomers in optically pure form.
Abstract:
Disclosed are new semiconductor materials prepared from perylene-imide copolymers. Such polymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
Abstract:
The present invention provides a process for the preparation of a transistor on a substrate, which transistor comprises a layer, which layer comprises polyimide B, which process comprises the steps of i) forming a layer comprising photocurable polyimide A by applying photocur- able polyimide A on a layer of the transistor or on the substrate ii) irradiating the layer comprising photocurable polyimide A with light of a wavelength of > = 360 nm in order to form the layer comprising polyimide B, and a transistor obtainable by that process.
Abstract:
A polymer comprising repeating units A and optionally repeating units B wherein Z = S, Se, N-R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1 - 4 R a groups; Y,at each occurrence, is independently a divalent C 1-6 alkyl group, a divalent C 1-6 haloalkyl group, or a covalent bond; c is from 1 to 6.
Abstract:
Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic À-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution-processability and low annealing temperature.