公开(公告)号：EP3172356B1

公开(公告)日：2018-09-19

申请号：EP15749738.9

申请日：2015-07-22

申请人： BASF SE

发明人： STRAUTMANN, Julia ,  PACIELLO, Rocco ,  SCHAUB, Thomas ,  EICKEMEYER, Felix ,  LÖFFLER, Daniel ,  WILMER, Hagen ,  RADIUS, Udo ,  BERTHEL, Johannes ,  HERING, Florian

IPC分类号： C23C16/18 ,  C23C16/455

CPC分类号： C23C16/45553 ,  C07F15/04 ,  C07F15/06 ,  C23C16/18

摘要： The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In detail the present invention relates a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state (Fig.) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1 and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, R2, R3, R5 and R6 are independent of each other hydrogen, an alkyl group, an aryl group or a trialkylsilyl group, n is an integer from 1 to 3, M is Ni or Co, X is a ligand which coordinates M, and m is an integer from 0 to 4.

公开(公告)号：EP3172356A1

公开(公告)日：2017-05-31

申请号：EP15749738.9

申请日：2015-07-22

申请人： BASF SE

发明人： STRAUTMANN, Julia ,  PACIELLO, Rocco ,  SCHAUB, Thomas ,  EICKEMEYER, Felix ,  LÖFFLER, Daniel ,  WILMER, Hagen ,  RADIUS, Udo ,  BERTHEL, Johannes ,  HERING, Florian

IPC分类号： C23C16/18 ,  C23C16/455

CPC分类号： C23C16/45553 ,  C07F15/04 ,  C07F15/06 ,  C23C16/18

摘要： The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In detail the present invention relates a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state (Fig.) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1 and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, R2, R3, R5 and R6 are independent of each other hydrogen, an alkyl group, an aryl group or a trialkylsilyl group, n is an integer from 1 to 3, M is Ni or Co, X is a ligand which coordinates M, and m is an integer from 0 to 4.

摘要翻译： 本发明属于用于在衬底上生成薄无机膜的工艺领域，特别是原子层沉积工艺。 详细地说，本发明涉及一种方法，其包括使通式（I）的化合物进入气态或气溶胶状态（图），并将通式（I）的化合物从气态或气溶胶状态沉积到固体基质上，其中 R1和R4彼此独立地为烷基，芳基或三烷基甲硅烷基，R2，R3，R5和R6彼此独立地为氢，烷基，芳基或三烷基甲硅烷基，n为整数 1至3，M为Ni或Co，X为配位M的配体，m为0至4的整数。