中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.009 seconds)

    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS
    1.
    发明公开
    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS 审中-公开
    生成薄无机膜的过程

    公开(公告)号：EP3177751A1

    公开(公告)日：2017-06-14

    申请号：EP15739640.9

    申请日：2015-07-24

    Applicant: BASF SE

    Inventor： STRAUTMANN, Julia ,  PACIELLO, Rocco ,  SCHAUB, Thomas ,  SCHIERLE-ARNDT, Kerstin ,  LÖFFLER, Daniel ,  WILMER, Hagen ,  EICKEMEYER, Felix ,  BLASBERG, Florian ,  LIMBURG, Carolin

    IPC: C23C16/18 ,  C23C16/455

    Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. More specifically, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R11, R12, R13, R14, R15, R16, R17, R18 are independent of each other hydrogen, an alkyl group, an aryl group, or a trialkylsilyl group, R21, R22, R23, R24 are independent of each other an alkyl group, an aryl group, or a trialkylsilyl group, n is 1 or 2, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 3.

    Abstract translation: 本发明属于在基材上产生无机薄膜的方法领域。 更具体地说，本发明涉及一种包括使通式（I）的化合物进入气态或气溶胶状态并将通式（I）的化合物从气态或气溶胶状态沉积到固体基质上的方法，其中R 11， R12，R13，R14，R15，R16，R17，R18相互独立地为氢，烷基，芳基或三烷基甲硅烷基，R21，R22，R23，R24彼此独立地为烷基， 芳基或三烷基甲硅烷基，n为1或2，M为金属或半金属，X为配位M的配位体，m为0〜3的整数。

    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS
    5.
    发明公开
    PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS 审中-公开
    生成薄无机膜的过程

    公开(公告)号：EP3172356A1

    公开(公告)日：2017-05-31

    申请号：EP15749738.9

    申请日：2015-07-22

    Applicant: BASF SE

    Inventor： STRAUTMANN, Julia ,  PACIELLO, Rocco ,  SCHAUB, Thomas ,  EICKEMEYER, Felix ,  LÖFFLER, Daniel ,  WILMER, Hagen ,  RADIUS, Udo ,  BERTHEL, Johannes ,  HERING, Florian

    IPC: C23C16/18 ,  C23C16/455

    CPC classification number: C23C16/45553 ,  C07F15/04 ,  C07F15/06 ,  C23C16/18

    Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In detail the present invention relates a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state (Fig.) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1 and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, R2, R3, R5 and R6 are independent of each other hydrogen, an alkyl group, an aryl group or a trialkylsilyl group, n is an integer from 1 to 3, M is Ni or Co, X is a ligand which coordinates M, and m is an integer from 0 to 4.

    Abstract translation: 本发明属于用于在衬底上生成薄无机膜的工艺领域，特别是原子层沉积工艺。 详细地说，本发明涉及一种方法，其包括使通式（I）的化合物进入气态或气溶胶状态（图），并将通式（I）的化合物从气态或气溶胶状态沉积到固体基质上，其中 R1和R4彼此独立地为烷基，芳基或三烷基甲硅烷基，R2，R3，R5和R6彼此独立地为氢，烷基，芳基或三烷基甲硅烷基，n为整数 1至3，M为Ni或Co，X为配位M的配体，m为0至4的整数。

Patent Agency Ranking