公开(公告)号：EP2427524A1

公开(公告)日：2012-03-14

申请号：EP10722029.5

申请日：2010-05-06

Applicant: BASF SE

Inventor： LI, Yuzhuo ,  RAMJI, Karpagavalli

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: A method for chemical mechanical planarization of ruthenium is provided. A semiconductor substrate comprising ruthenium is contacted with a chemical mechanical polishing system comprising an oxidizing particle, an abrasive, a polishing pad and a liquid carrier. The pH of the polishing composition is about 8 to 12. A high ruthenium removal rate for the inventive slurry was observed. The disclosed oxidizing particle advantageously improves the polishing speed of ruthenium under low polishing pressure and decreases the scratches generated on low-k material.

公开(公告)号：EP2427524B1

公开(公告)日：2013-07-17

申请号：EP10722029.5

申请日：2010-05-06

Applicant: BASF SE

Inventor： LI, Yuzhuo ,  RAMJI, Karpagavalli

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/3212

公开(公告)号：EP2507332A1

公开(公告)日：2012-10-10

申请号：EP10832737.0

申请日：2010-11-25

Applicant: BASF SE

Inventor： RAMAN, Vijay Immanuel ,  LI, Yuzhuo ,  BRANDS, Mario ,  LAN, Yongqing ,  RUSHING, Kenneth ,  RAMJI, Karpagavalli

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  H01L21/3105 ,  H01L21/306

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463

Abstract: An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, － the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, － a lower SER than at its start and the same or essentially the same MRR as at its start or － a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.

Abstract translation: 在wässrige化学机械抛光（CMP）剂（a）包含固体颗粒（a1）的含（A11）腐蚀抑制剂对金属，和（A12）的固体材料，所述固体粒子（A1）被精细地分散在wässrige相 ; 及其在一个过程中使用用于在化学机械的端部从基板的表面除去松散材料层，直到所有材料残差从暴露表面去除平坦化通过化学机械抛光的暴露表面，worin CMP试剂展品 抛光，不加入辅助材料，-the相同或本质上相同静态蚀刻速率（SER），其在它的开始和下材料去除速率（MRR）比在其开始，-A下SER比在其开始和 基本上相同或在其开始或-低级SER和比在其开始较低MRR相同MRR; 检查做了CMP试剂表现出软着陆的行为。