公开(公告)号：EP3029175A1

公开(公告)日：2016-06-08

申请号：EP14196567.3

申请日：2014-12-05

申请人： BASF SE

发明人： Ruettinger, Wolfgang ,  Wagloehner, Steffen ,  Loeffler, Daniel ,  Ahlf, Maraike

IPC分类号： C23C16/455 ,  H01L21/02 ,  C23C16/30 ,  C23C16/56 ,  H01L21/768

CPC分类号： H01L21/02203 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/7682 ,  H01L2221/1047

摘要： The present invention relates to the production of porous thin films, in particular by atomic layer deposition. The present invention relates to a process for producing porous films comprising the steps
(a) exposing a solid substrate to a vapor containing an organic compound (A), whereby a submonolayer of the organic compound (A) covalently bound to the surface of the solid substrate is formed,
(b) exposing the solid substrate to a vapor containing a compound of general formula (I) SiX 4 (I),
wherein X is hydrogen, a halogen, an alkoxy, an aryloxy, or an amine group,
(c) exposing the solid substrate to a vapor containing an organic compound (B) which has at least two functional groups out of which at least one can form a covalent bond with the surface-bound organic compound (A),
(d) performing the steps
(d1) exposing the solid substrate to a vapor containing water, and
(d2) exposing the solid substrate to a vapor containing a compound of general formula (I), (e) exposing the solid substrate to a vapor containing an organic compound (C) which has at least two functional groups out of which at least one can form a covalent bond to the surface-bound organic compound (B),

(f) removing organic parts from the film formed on the surface of the solid substrate.

摘要翻译： 本发明涉及多孔薄膜的生产，特别是原子层沉积。 本发明涉及一种制造多孔膜的方法，该方法包括以下步骤：（a）将固体基材暴露于含有有机化合物（A）的蒸气中，由此使有机化合物（A）的亚单分子层共价结合到固体表面 （b）将固体基质暴露于含有其中X是氢，卤素，烷氧基，芳氧基或胺基的通式（I）SiX4（I）的化合物的蒸气，（c） 将固体基材暴露于含有具有至少两个官能团的有机化合物（B）的蒸气，其中至少一个官能团可与表面结合的有机化合物（A）形成共价键，（d）执行步骤（ （d2）将固体基质暴露于含有通式（I）化合物的蒸气中，（e）将固体基质暴露于含有机化合物（C）的蒸气中， 其中至少有两个功能组 可以与表面结合的有机化合物（B）形成共价键，（f）从形成在固体基质表面上的膜中除去有机部分。

公开(公告)号：EP3029174A1

公开(公告)日：2016-06-08

申请号：EP14196566.5

申请日：2014-12-05

申请人： BASF SE

发明人： Ruettinger, Wolfgang ,  Wagloehner, Steffen ,  Loeffler, Daniel ,  Adermann, Torben ,  Usui, Takane

IPC分类号： C23C16/455 ,  H01L21/02

CPC分类号： C23C16/401 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/0228

摘要： The present invention relates to the production of porous thin films, in particular by atomic layer deposition. The present invention relates to a process for producing porous films comprising
(a) performing a sequence of depositing a compound of general formula (I) from the gaseous state on a solid substrate at a temperature below 400 °C and contacting the deposited compound of general formula (I) with a compound capable of removing A 1 from the compound of general formula (I),

wherein
R
is an alkyl or aryl group,
X
is hydrogen, a halogen, an amine, an alkoxy group or an aryloxy group,
A 1 , A 2 , A 3
are independent of each other hydrogen, alkyl groups, or aryl groups and

(b) removing R from the deposited compound of general formula (I).

摘要翻译： 本发明涉及多孔薄膜的制造，特别是通过原子层沉积。 本发明涉及一种多孔膜的制造方法，其特征在于：（a）在低于400℃的温度下，在固体基材上进行从气态下沉积通式（I）的化合物的顺序， 式（I）的化合物与通式（I）的化合物可以除去A 1的化合物反应，其中R是烷基或芳基，X是氢，卤素，胺，烷氧基或芳氧基，A 1，A 2，A 3彼此独立地为氢，烷基或芳基，（b）从通式（I）的沉积化合物中除去R。