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公开(公告)号：EP3676366A1
公开(公告)日：2020-07-08
申请号：EP18796813.6
申请日：2018-05-17
发明人： LI, Tiansheng , XIE, Zhenyu , MAO, Lijun
IPC分类号： C12M1/34
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公开(公告)号：EP2879180B1
公开(公告)日：2017-07-05
申请号：EP12881532.1
申请日：2012-11-16
发明人： LI, Tiansheng , JIANG, Xiaohui , XU, Shaoying
IPC分类号： H01L27/146
CPC分类号： H01L27/14687 , H01L27/14612 , H01L27/14643 , H01L27/14658 , H01L27/14689 , H01L27/14692
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公开(公告)号：EP3242156A1
公开(公告)日：2017-11-08
申请号：EP15832874.0
申请日：2015-08-14
发明人： LI, Tiansheng , XIE, Zhenyu
IPC分类号： G02F1/1335 , G09G3/00
CPC分类号： H01L27/1244 , G02B5/201 , G02F1/1335 , G02F1/133514 , G02F1/13454 , G02F2001/136254 , G09G3/00 , G09G2330/10 , H01L27/1296
摘要： The present invention provides a color filter substrate, a display device and a detection method thereof, aims to solve the problems of difficulty in failure positioning and low detection efficiency in existing display panels. The color filter substrate comprises a plurality of sub-pixels arranged in an array, each of the sub-pixels is provided with a color filter, and at least a part of columns of sub-pixels are marked column of sub-pixels. The shapes of the color filters of a part of sub-pixels of the marked column of sub-pixels are different from those of the remaining sub-pixels. The display device comprises the above-mentioned color filter substrate. The color filter substrate can be used in the display device, particularly suitable for the display device which adopts double side GOA circuits.
摘要翻译： 本发明提供了一种彩膜基板，显示装置及其检测方法，旨在解决现有显示面板难以定位故障，检测效率低的问题。 彩色滤光片基板包括排列成阵列的多个子像素，每个子像素设置有彩色滤光片，至少一部分子像素列为子像素的标记列。 被标记的列的子像素的一部分子像素的滤色器的形状不同于其余的子像素的形状。 显示装置包括上述滤色器基板。 彩色滤光片基板可以用于显示装置中，特别适用于采用双面GOA电路的显示装置。
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公开(公告)号：EP3054483A1
公开(公告)日：2016-08-10
申请号：EP14847683.1
申请日：2014-07-09
发明人： LI, Tiansheng , XIE, Zhenyu
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , H01L27/1218 , H01L27/1248 , H01L27/1262 , H01L27/1288
摘要： The present disclosure provides an array substrate, a method for manufacturing the same and a display device. The method includes: depositing a gate metal film on a base substrate, and forming a first pattern including the gate electrode by a first patterning process; depositing a gate insulating film, a first transparent conductive film, a source/drain metal film and a doped a-Si film sequentially, and forming a second pattern including the pixel electrode, the source electrode, the drain electrode and a doped semiconductor layer by a second patterning process; depositing an a-Si film, and forming a third pattern including a TFT channel, the semiconductor layer and a gate insulating layer via-hole by a third patterning process; depositing a passivation layer film, and forming a fourth pattern including a passivation layer via-hole by a fourth patterning process, the passivation layer via-hole being arranged at a position corresponding to the gate insulating layer via-hole; and depositing a second transparent conductive film on the base substrate with the fourth pattern, and forming a fifth pattern including an electrical connector by a fifth patterning process. According to the present disclosure, it is able to reduce the process steps and improve the product quality.
摘要翻译： 本发明提供了一种阵列基板及其制造方法和显示装置。 该方法包括：在基础衬底上沉积栅金属膜，并且通过第一图案化工艺形成包括栅电极的第一图案; 依次沉积栅绝缘膜，第一透明导电膜，源漏金属膜和掺杂a-Si膜，以及通过以下步骤形成包括像素电极，源电极，漏电极和掺杂半导体层的第二图案： 第二构图工艺; 沉积a-Si膜，并通过第三构图工艺形成包括TFT沟道，半导体层和栅极绝缘层通孔的第三图案; 沉积钝化层薄膜;以及通过第四构图工艺形成包括钝化层过孔的第四图案，所述钝化层过孔设置在对应于所述栅极绝缘层过孔的位置处; 以及利用第四图案在基底基板上沉积第二透明导电膜，并且通过第五图案化工艺形成包括电连接器的第五图案。 根据本公开，能够减少处理步骤并提高产品质量。
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公开(公告)号：EP2879180A1
公开(公告)日：2015-06-03
申请号：EP12881532.1
申请日：2012-11-16
发明人： LI, Tiansheng , JIANG, Xiaohui , XU, Shaoying
IPC分类号： H01L27/146
CPC分类号： H01L27/14687 , H01L27/14612 , H01L27/14643 , H01L27/14658 , H01L27/14689 , H01L27/14692
摘要： A method for fabricating a sensor, comprising: forming a pattern of a bias line (42) on a base substrate (32) by using a first patterning process; forming a pattern of a transparent electrode (41), a pattern of a photodiode (40), a pattern of a receive electrode (39), a pattern of a source (33) electrode, a pattern of a drain electrode (34), a pattern of a data line and a pattern of an ohmic layer (35) by using a second patterning process; forming a pattern of an active layer (36), a pattern of a first passivation layer (43), a pattern of a gate electrode (38) and a pattern of a gate line by using a third patterning process. The above method reduces the number of used mask in the fabrication processes as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the yield rate.
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公开(公告)号：EP2879178A1
公开(公告)日：2015-06-03
申请号：EP12878647.2
申请日：2012-11-26
发明人： LI, Tiansheng , XU, Shaoying , XIE, Zhenyu
IPC分类号： H01L27/146
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14632 , H01L27/1464 , H01L27/14658 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： A sensor and its fabrication method are provided. The sensor comprises: a base substrate (32), a group of gate lines (30) and a group of data lines (31) arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines (30) and the group of data lines (31), each sensing element comprising a Thin Film Transistor (TFT) device and a photodiode sensing device, wherein the photodiode sensor device comprises: a bias line (42) disposed on the base substrate (32); a transparent electrode (41) disposed on the bias line (42) and being electrically contacted with the bias line (42); a photodiode (40) disposed on the transparent electrode (41); and a receiving electrode (39) disposed on the photodiode (40); the TFT device is located above the photodiode (40). When the sensor is functioning, light is directly transmitted onto the photodiode sensor device through the base substrate (32). In comparison with conventional technologies, the light loss is largely reduced and the light absorption usage ratio is improved.
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公开(公告)号：EP2879178B1
公开(公告)日：2017-08-09
申请号：EP12878647.2
申请日：2012-11-26
发明人： LI, Tiansheng , XU, Shaoying , XIE, Zhenyu
IPC分类号： H01L27/146
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14632 , H01L27/1464 , H01L27/14658 , H01L27/14687 , H01L27/14689 , H01L27/14692
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公开(公告)号：EP2879179B1
公开(公告)日：2017-09-27
申请号：EP12878648.0
申请日：2012-12-03
发明人： YAN, Changjiang , XIE, Zhenyu , XU, Shaoying , LI, Tiansheng
IPC分类号： H01L27/146 , H01L27/12 , H01L31/0256 , H01L31/105
CPC分类号： H01L31/1055 , H01L27/1214 , H01L27/14603 , H01L27/14616 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L27/14692 , H01L29/66765 , H01L29/78669 , H01L31/0256
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公开(公告)号：EP2879179A1
公开(公告)日：2015-06-03
申请号：EP12878648.0
申请日：2012-12-03
发明人： YAN, Changjiang , XIE, Zhenyu , XU, Shaoying , LI, Tiansheng
IPC分类号： H01L27/146 , H01L29/786
CPC分类号： H01L31/1055 , H01L27/1214 , H01L27/14603 , H01L27/14616 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L27/14692 , H01L29/66765 , H01L29/78669 , H01L31/0256
摘要： A sensor and its fabrication method are provided, the sensor comprises: a base substrate (32), a group of gate lines (30) and a group of data lines (31) arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines (30) and the group of data lines (31), each sensing element comprising a TFT device and a photodiode sensing device, wherein a channel region of the TFT device is inverted and the source and drain electrodes (33, 34) are positioned between the active layer (36) and the gate electrode (38). The sensor reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.
摘要翻译： 提供一种传感器及其制造方法，所述传感器包括：基底（32），一组栅极线（30）和一组布置成彼此交叉的数据线（31），以及多个感测元件 在阵列中并且由栅极线组（30）和数据线组（31）限定，每个感测元件包括TFT器件和光电二极管感测器件，其中TFT器件的沟道区域被反转，源极 并且漏电极（33,34）位于有源层（36）和栅电极（38）之间。 传感器减少了掩模的数量和生产成本，简化了生产过程，从而显着提高了生产能力和无缺陷率。
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