公开(公告)号：EP3896736B1

公开(公告)日：2024-05-01

申请号：EP21168977.3

申请日：2021-04-16

IPC分类号： H01L29/423 ,  H01L29/786 ,  H01L27/12 ,  H01L29/49

CPC分类号： H01L27/1237 ,  H01L27/1248 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/42384 ,  H01L29/78633

公开(公告)号：EP3327497A1

公开(公告)日：2018-05-30

申请号：EP17188494.3

申请日：2017-08-30

申请人： AU Optronics Corporation

发明人： Lee, Ming-Hsien

IPC分类号： G02F1/1368 ,  H01L29/786

CPC分类号： H01L27/1248 ,  G02F1/133345 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2201/123 ,  H01L27/1218 ,  H01L27/124 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78636

摘要： A pixel structure is disposed on a substrate and includes a bump, a first insulating layer, a semiconductive layer, a second insulating layer, a metal layer, and a pixel electrode. The bump is disposed on the substrate. The first insulating layer is disposed on the substrate and covers the bump. The first insulating layer has a protruding portion at the position at which the first insulating layer covers the bump. The semiconductive layer is disposed on the first insulating layer, and at least a portion of the semiconductive layer is disposed above the protruding portion. The second insulating layer is disposed on the first insulating layer and covers the semiconductive layer. The second insulating layer has a via, so as to make a portion of the semiconductive layer be not covered by the second insulating layer. The via corresponds to the protruding portion in a direction perpendicular to the substrate. The metal layer is electrically connected to the semiconductive layer through the via.

公开(公告)号：EP3316302A1

公开(公告)日：2018-05-02

申请号：EP17198471.9

申请日：2017-10-26

申请人： LG Display Co., Ltd. ,  LG Innotek Co., Ltd. ,  LG Electronics Inc.

发明人： Kang, HanSaem ,  Son, HyeonHo ,  Seo, KyungHan ,  Lee, Sangyoul ,  Yuh, Hwankuk ,  Noh, Seung Ouk

IPC分类号： H01L25/075

CPC分类号： H01L27/1248 ,  H01L25/0753 ,  H01L27/124 ,  H01L33/38

摘要： Disclosed is a light emitting diode display device in which a time taken in a process of connecting a light emitting device to a pixel circuit is shortened. The light emitting diode display device includes a thin film transistor (TFT) array substrate including a concave portion and a light emitting device disposed in the concave portion. The light emitting device includes a first electrode and a second electrode. The light emitting device further includes a first portion, including the first and second electrodes, and a second portion opposite to the first portion, and a distance between the first portion to a floor surface of the concave portion is greater than a distance between the second portion to the floor surface of the concave portion.

摘要翻译： 公开了一种发光二极管显示装置，其中在将发光装置连接到像素电路的过程中所花费的时间缩短。 发光二极管显示装置包括薄膜晶体管（TFT）阵列基板，该薄膜晶体管（TFT）阵列基板包括凹入部分和设置在该凹入部分中的发光器件。 发光器件包括第一电极和第二电极。 发光器件还包括：包括第一和第二电极的第一部分以及与第一部分相对的第二部分，并且第一部分到凹部的底面之间的距离大于第二部分和第二部分之间的距离 部分连接到凹入部分的地板表面。

公开(公告)号：EP3316299A1

公开(公告)日：2018-05-02

申请号：EP17191515.0

申请日：2017-09-18

申请人： InnoLux Corporation

发明人： WU, Yuan-Lin ,  WU, Yu-Hsien ,  LEE, Kuan-Feng ,  TSAI, Tsung-Han

IPC分类号： H01L25/075

CPC分类号： H01L25/167 ,  H01L24/29 ,  H01L25/075 ,  H01L25/0753 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1248 ,  H01L33/62 ,  H01L2224/29499 ,  H01L2224/32148 ,  H01L2924/12041 ,  H01L2924/1426 ,  H01L2933/0033 ,  H01L2933/0066

摘要： A display device is provided. The display device includes a supporting film and a flexible substrate disposed on the supporting film. The display device also includes a driving layer disposed on the flexible substrate, and a conductive pad disposed on the driving layer. The display device further includes a light-emitting diode disposed on the conductive pad and electrically connected to the conductive pad, wherein the supporting film has a first hardness, the flexible substrate has a second hardness, and the first hardness is greater than or equal to the second hardness.

摘要翻译： 提供了一种显示装置。 显示装置包括支撑膜和设置在支撑膜上的柔性基板。 显示装置还包括设置在柔性基板上的驱动层以及设置在驱动层上的导电焊盘。 所述显示装置还包括发光二极管，所述发光二极管设置在所述导电焊盘上并且电连接到所述导电焊盘，其中所述支撑膜具有第一硬度，所述柔性基板具有第二硬度，并且所述第一硬度大于或等于 第二个硬度。

公开(公告)号：EP3196692A4

公开(公告)日：2018-04-18

申请号：EP15842343

申请日：2015-01-05

申请人： BOE TECHNOLOGY GROUP CO LTD

发明人： NING CE ,  WU CHUNWEI ,  ZHANG YUTING

IPC分类号： G02F1/136 ,  G02F1/1333 ,  G02F1/1343

CPC分类号： H01L27/124 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/134363 ,  G02F1/136 ,  G02F2001/134318 ,  G02F2001/134372 ,  G02F2001/134381 ,  G02F2001/13606 ,  G02F2201/121 ,  H01L27/1248

摘要： The present invention relates to the field of display technology, particularly to an array substrate and a display device, for solving the problem that the capacitance values of C gc and/or C dc are relatively large in the prior art. One embodiment of the present invention provides an array substrate, comprising: a gate line, a data line, and a common electrode layer electrically insulated from the gate line and the data line, wherein there is at least one overlapping area between the common electrode layer and the gate line, and/or, there is at least one overlapping area between the common electrode layer and the data line; moreover, the common electrode layer comprises a hollow structure part located in the at least one overlapping area, and the hollow structure part located in the overlapping area comprises at least one hollow area. The embodiment of the present invention can reduce the capacitance values of C gc and/or C dc .

公开(公告)号：EP3185305A4

公开(公告)日：2018-04-11

申请号：EP14882777

申请日：2014-12-17

申请人： BOE TECHNOLOGY GROUP CO LTD

发明人： LONG CHUNPING ,  LIANG YINAN

IPC分类号： H01L29/786 ,  H01L21/3213 ,  H01L27/12 ,  H01L27/32 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66

CPC分类号： H01L29/78675 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0273 ,  H01L21/26513 ,  H01L21/283 ,  H01L21/3065 ,  H01L21/32139 ,  H01L23/3171 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/4958 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78618 ,  H01L29/78633 ,  H01L2227/323

摘要： A thin film transistor and its manufacturing method, an array substrate and its manufacturing method, and a display device are provided. The thin film transistor includes a gate electrode (7), a source electrode (9), a drain electrode (10), an active layer (4) and a gate insulation layer (6). The gate insulation layer (6) is provided above the active layer (4), the gate (7), the source electrode (9) and the drain electrode (10) are provided on a same layer above the gate insulation layer (6), the active layer (4) and the source electrode (9) are connected through a first connection electrode (12b), and the active layer and the drain electrode are connected through a second connection electrode (12c). The thin film transistor can be formed by three times of patterning processes, by which the process time period is shortened, the process yield is improved, and the process cost is reduced, and so on.

公开(公告)号：EP3107124B1

公开(公告)日：2018-04-04

申请号：EP16151402.1

申请日：2016-01-15

申请人： COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

发明人： POSSEME, Nicolas

IPC分类号： H01L29/66 ,  H01L21/3065 ,  H01L21/8238 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L29/6656 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31155 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1248 ,  H01L29/6653 ,  H01L29/66742 ,  H01L29/78654

公开(公告)号：EP2747141B1

公开(公告)日：2018-03-07

申请号：EP13193776.5

申请日：2013-11-21

申请人： Beijing BOE Optoelectronics Technology Co., Ltd.

发明人： Xie, Zhenyu ,  Xu, Shaoying ,  Li, Tainsheng ,  Yan, Changjiang ,  Li, Jing ,  Tian, Zongmin

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC分类号： H01L27/1248 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： The technical disclosure relates to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a base substrate, a gate electrode, an active layer, source/drain electrodes, a pixel electrode and one or more insulating layers, wherein at least one of the insulating layers comprises a bottom insulating sub-layer and a top insulating sub-layer, the top insulating sub-layer having a hydrogen content higher than that of the bottom insulating sub-layer.

公开(公告)号：EP3285303A1

公开(公告)日：2018-02-21

申请号：EP15832876.5

申请日：2015-08-11

申请人： BOE Technology Group Co., Ltd.

发明人： LIU, Xiaodi ,  WANG, Gang

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/385 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

摘要： Embodiments of the present invention disclose a thin film transistor and an array substrate, manufacturing methods thereof, and a display device, which relate to the field of display technology, and can improve drifting of a threshold voltage of a thin film transistor and enhance the stability and reliability of an array substrate. The thin film transistor comprises an active layer and a gate insulating layer, wherein the material of the active layer is a metal oxide semiconductor, and during forming the thin film transistor, the gate insulating layer conveys oxygen to the active layer so as to reduce an interface state density and a movable impurity concentration of a contact interface between the active layer and the gate insulating layer.

摘要翻译： 本发明实施例公开了一种涉及显示技术领域的薄膜晶体管和阵列基板及其制作方法和显示装置，可以改善薄膜晶体管的阈值电压漂移，提高稳定性 和阵列基板的可靠性。 所述薄膜晶体管包括有源层和栅极绝缘层，所述有源层的材料为金属氧化物半导体，在形成所述薄膜晶体管时，所述栅极绝缘层将氧气输送至所述有源层，以减少 界面态密度和活性层与栅极绝缘层之间的接触界面的可移动的杂质浓度。

公开(公告)号：EP3054345B8

公开(公告)日：2018-02-14

申请号：EP15187017.7

申请日：2015-09-28

申请人： Samsung Display Co., Ltd.

发明人： Jeon, Jong Hwan ,  Kang, Suk Hoon ,  Jung, Jin-Soo ,  Jeon, Baek Kyun ,  Lee, Jun Woo ,  Kim, In Ok

IPC分类号： G02F1/1337 ,  C08L79/08

CPC分类号： C08G73/101 ,  B32B23/08 ,  B32B27/08 ,  B32B27/281 ,  B32B2457/202 ,  C08G73/1042 ,  C08G73/1078 ,  C09D179/08 ,  C09K19/56 ,  G02F1/133345 ,  G02F1/133711 ,  G02F1/133723 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  H01L27/1248 ,  Y10T428/1023

摘要： A photoalignment agent, including at least one of a polyimide and a polyamic acid and a capping terminal connected to a main chain end terminal of at least one of the polyimide and the polyamic acid. The capping terminal includes an alkylene group (-C m H 2m -, m is a natural number) and a core stereo unit in a dendrimer form.