公开(公告)号：EP3363046A1

公开(公告)日：2018-08-22

申请号：EP16852868.5

申请日：2016-10-13

申请人： BOE Technology Group Co., Ltd. ,  Ordos Yuansheng Optoelectronics Co., Ltd.

发明人： LAI, Weilin ,  CHAN, Yucheng ,  HUANG, Jianbang

IPC分类号： H01L21/77 ,  H01L27/32

CPC分类号： H01L27/3262 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/66772 ,  H01L29/78654 ,  H01L51/5218 ,  H01L51/5234 ,  H01L51/56 ,  H01L2251/5315

摘要： The present disclosure provides an array substrate, its manufacturing method, and a display apparatus. The array substrate includes a monocrystalline silicon layer and an array circuit layer. The array circuit layer is disposed over the monocrystalline silicon layer. The array circuit layer comprises a scan drive circuit, a data drive circuit, and a plurality of pixel circuits. The scan drive circuit and the data drive circuit are configured to respectively control a plurality of scan lines and a plurality of data lines to in turn drive a plurality of pixels. Each of the plurality of pixel circuits is configured to drive one of the plurality of pixels to emit light under control of at least one of the plurality of scan lines and at least one of the plurality of data lines; and the scan drive circuit, the data drive circuit, and the plurality of pixel circuits comprise a plurality of thin film transistors (TFTs), each having an active region disposed in the monocrystalline silicon layer.