A reflection type mask
    1.
    发明公开
    A reflection type mask 失效
    Reflexionsmaske。

    公开(公告)号:EP0279670A2

    公开(公告)日:1988-08-24

    申请号:EP88301367.4

    申请日:1988-02-18

    IPC分类号: G03F1/00

    摘要: A reflection type mask usable to print a pattern upon a semiconductor wafer by use of soft X-rays or otherwise is disclosed. A reflective surface is formed by a multilayered film which is formed on a substrate by layering different materials having different refractive indices in consideration of Bragg diffraction and Fresnel reflection. A non-reflective portion is formed on the reflecting surface to provide a desired pattern. Alternatively, a pattern comprising a multilayered structure may be formed upon a non-reflective substrate. The mask of the present invention assures pattern printing of high contrast.

    摘要翻译: 公开了一种可用于通过使用软X射线在半导体晶片上印刷图案的反射型掩模。 考虑到布拉格衍射和菲涅尔反射,通过分层折射率不同的材料形成在基板上的多层膜形成反射表面。 在反射面上形成非反射部分,以提供所需的图案。 或者,包括多层结构的图案可以形成在非反射基板上。 本发明的掩模确保高对比度的图案印刷。