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公开(公告)号：EP0559141A2
公开(公告)日：1993-09-08
申请号：EP93103291.6
申请日：1993-03-02
发明人： Ishikawa, Nobuyuki, c/o Canon Kabushiki Kaisha , Saito, Keishi, c/o Canon Kabushiki Kaisha , Kawakami, Soichiro, c/o Canon Kabushiki Kaisha , Matsuyama, Jinsho, c/o Canon Kabushiki Kaisha , Kariya, Toshimitsu, c/o Canon Kabushiki Kaisha , Kohda, Yuzo, c/o Canon Kabushiki Kaisha , Okada, Naoto, c/o Canon Kabushiki Kaisha
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/075 , H01L31/052
CPC分类号： H01L31/02167 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/0236 , H01L31/0543 , H01L31/0547 , H01L31/056 , Y02E10/52 , Y02E10/543
摘要： A photovoltaic device having a semiconductor layer; electrodes; and a surface protection layer adjacent to the light incident side, wherein granules of a material different from those of the surface protection layer are disposed in the surface protection layer.
摘要翻译： 具有半导体层的光电器件; 电极; 以及与光入射侧相邻的表面保护层，其中与表面保护层不同的材料颗粒设置在表面保护层中。
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公开(公告)号：EP0969518A3
公开(公告)日：2005-11-02
申请号：EP99112411.6
申请日：1999-06-29
发明人： Kariya, Toshimitsu, c/o Canon Kabushiki Kaisha , Sano, Masafumi, c/o Canon Kabushiki Kaisha , Nishio, Yutaka, c/o Canon Kabushiki Kaisha
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/075
CPC分类号： H01L31/076 , H01L31/022483 , H01L31/075 , H01L31/1824 , H01L31/1884 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Provided is a photovoltaic element comprising a p-type semiconductor layer and a transparent conductive layer comprised of indium tin oxide bonded to each other at a surface, wherein the sum of tin oxide content and tin content of the transparent conductive layer varies in the layer thickness direction and is minimum at the bonding surface of the p-type semiconductor layer and the transparent conductive layer. Thus provided is a photovoltaic element which has a high photoelectric conversion efficiency with less lowering even when exposed to an intense light for a long term.
摘要翻译： 提供一种光电元件，其包括p型半导体层和由表面上彼此键合的氧化铟锡构成的透明导电层，其中透明导电层的氧化锡含量和锡含量之和在层厚度 方向，并且在p型半导体层和透明导电层的接合表面处最小。 因此，即使长时间暴露于强光下，光电元件也具有高的光电转换效率，降低较少。
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公开(公告)号：EP0969518A2
公开(公告)日：2000-01-05
申请号：EP99112411.6
申请日：1999-06-29
发明人： Kariya, Toshimitsu, c/o Canon Kabushiki Kaisha , Sano, Masafumi, c/o Canon Kabushiki Kaisha , Nishio, Yutaka, c/o Canon Kabushiki Kaisha
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/075
CPC分类号： H01L31/076 , H01L31/022483 , H01L31/075 , H01L31/1824 , H01L31/1884 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Provided is a photovoltaic element comprising a p-type semiconductor layer and a transparent conductive layer comprised of indium tin oxide bonded to each other at a surface, wherein the sum of tin oxide content and tin content of the transparent conductive layer varies in the layer thickness direction and is minimum at the bonding surface of the p-type semiconductor layer and the transparent conductive layer. Thus provided is a photovoltaic element which has a high photoelectric conversion efficiency with less lowering even when exposed to an intense light for a long term.
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4.发明授权Method and apparatus for continuously forming functional deposited films with a large area by microwave plasma CVD 失效用于通过微波等离子体CVD法，连续生产大表面的实用淀积薄膜的方法和装置。
公开(公告)号：EP0411317B1
公开(公告)日：1995-09-27
申请号：EP90112245.7
申请日：1990-06-27
发明人： Echizen, Hiroshi, c/o Canon Kabushiki Kaisha , Fujioka, Yasushi, c/o Canon Kabushiki Kaisha , Nakagawa, Katsumi, c/o Canon Kabushiki Kaisha , Kanai, Masahiro, c/o Canon Kabushiki Kaisha , Kariya, Toshimitsu, c/o Canon Kabushiki Kaisha , Matsuyama, Jinsho, c/o Canon Kabushiki Kaisha , Takei, Tetsuya, c/o Canon Kabushiki Kaisha
CPC分类号： H01J37/3222 , C23C16/50 , H01J37/32192 , H01J37/3277 , H01J2237/3325 , H01L31/202 , H01L31/206 , Y02E10/50 , Y02P70/521
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公开(公告)号：EP0559141A3
公开(公告)日：1993-10-06
申请号：EP93103291.6
申请日：1993-03-02
发明人： Ishikawa, Nobuyuki, c/o Canon Kabushiki Kaisha , Saito, Keishi, c/o Canon Kabushiki Kaisha , Kawakami, Soichiro, c/o Canon Kabushiki Kaisha , Matsuyama, Jinsho, c/o Canon Kabushiki Kaisha , Kariya, Toshimitsu, c/o Canon Kabushiki Kaisha , Kohda, Yuzo, c/o Canon Kabushiki Kaisha , Okada, Naoto, c/o Canon Kabushiki Kaisha
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/075 , H01L31/052
CPC分类号： H01L31/02167 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/0236 , H01L31/0543 , H01L31/0547 , H01L31/056 , Y02E10/52 , Y02E10/543
摘要： A photovoltaic device having a semiconductor layer; electrodes; and a surface protection layer adjacent to the light incident side, wherein granules of a material different from those of the surface protection layer are disposed in the surface protection layer.
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公开(公告)号：EP0559141B1
公开(公告)日：1998-06-10
申请号：EP93103291.6
申请日：1993-03-02
发明人： Ishikawa, Nobuyuki, c/o Canon Kabushiki Kaisha , Saito, Keishi, c/o Canon Kabushiki Kaisha , Kawakami, Soichiro, c/o Canon Kabushiki Kaisha , Matsuyama, Jinsho, c/o Canon Kabushiki Kaisha , Kariya, Toshimitsu, c/o Canon Kabushiki Kaisha , Kohda, Yuzo, c/o Canon Kabushiki Kaisha , Okada, Naoto, c/o Canon Kabushiki Kaisha
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/075 , H01L31/052
CPC分类号： H01L31/02167 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/0236 , H01L31/0543 , H01L31/0547 , H01L31/056 , Y02E10/52 , Y02E10/543
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7.发明公开Method and apparatus for continuously forming functional deposited films with a large area by microwave plasma CVD 失效通过微波等离子体CVD连续形成具有大面积的功能性沉积膜的方法和装置
公开(公告)号：EP0411317A3
公开(公告)日：1991-05-29
申请号：EP90112245.7
申请日：1990-06-27
发明人： Echizen, Hiroshi, c/o Canon Kabushiki Kaisha , Fujioka, Yasushi, c/o Canon Kabushiki Kaisha , Nakagawa, Katsumi, c/o Canon Kabushiki Kaisha , Kanai, Masahiro, c/o Canon Kabushiki Kaisha , Kariya, Toshimitsu, c/o Canon Kabushiki Kaisha , Matsuyama, Jinsho, c/o Canon Kabushiki Kaisha , Takei, Tetsuya, c/o Canon Kabushiki Kaisha
CPC分类号： H01J37/3222 , C23C16/50 , H01J37/32192 , H01J37/3277 , H01J2237/3325 , H01L31/202 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： A method for continuously forming a functional deposited film with a large area according to a microwave plasma CVD process is described. The method comprises the steps of continuously traveling a band-shaped member containing a conductive member along its length during which a pillar-shaped film-forming space capable of being kept substantially in vacuum therein is established by the use of the traveling band-shaped member as a side wall for the film-forming space, charging starting gases for film formation through a gas feed means into the film-forming space, and simultaneously radiating a microwave through a microwave antenna in all directions vertical to the direction of movement of the microwave so that microwave power is supplied to the film-forming space to initiate a plasma in the space whereby the film is deposited on the surface of the continuously traveling band-shaped member which constitutes the side wall exposed to the plasma. An apparatus for carrying out the method is also described.
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8.发明公开Method and apparatus for continuously forming functional deposited films with a large area by microwave plasma CVD 失效用于通过微波等离子体CVD法，连续生产大表面的实用淀积薄膜的方法和装置。
公开(公告)号：EP0411317A2
公开(公告)日：1991-02-06
申请号：EP90112245.7
申请日：1990-06-27
发明人： Echizen, Hiroshi, c/o Canon Kabushiki Kaisha , Fujioka, Yasushi, c/o Canon Kabushiki Kaisha , Nakagawa, Katsumi, c/o Canon Kabushiki Kaisha , Kanai, Masahiro, c/o Canon Kabushiki Kaisha , Kariya, Toshimitsu, c/o Canon Kabushiki Kaisha , Matsuyama, Jinsho, c/o Canon Kabushiki Kaisha , Takei, Tetsuya, c/o Canon Kabushiki Kaisha
CPC分类号： H01J37/3222 , C23C16/50 , H01J37/32192 , H01J37/3277 , H01J2237/3325 , H01L31/202 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： A method for continuously forming a functional deposited film with a large area according to a microwave plasma CVD process is described. The method comprises the steps of continuously traveling a band-shaped member containing a conductive member along its length during which a pillar-shaped film-forming space capable of being kept substantially in vacuum therein is established by the use of the traveling band-shaped member as a side wall for the film-forming space, charging starting gases for film formation through a gas feed means into the film-forming space, and simultaneously radiating a microwave through a microwave antenna in all directions vertical to the direction of movement of the microwave so that microwave power is supplied to the film-forming space to initiate a plasma in the space whereby the film is deposited on the surface of the continuously traveling band-shaped member which constitutes the side wall exposed to the plasma. An apparatus for carrying out the method is also described.
摘要翻译： 描述了一种用于形成功能连续沉积电影具有大面积gemäß到微波等离子体CVD的工艺方法。 该方法包括的连续移动的带状构件包含沿其能够在真空中。其中通过使用行进带状部件的建立基本上保持柱状电影成型空间中它的长度的导电性部件的步骤 如侧壁的膜形成空间，通过气体输送充电膜形成原料气体装置引入到膜形成空间，并且同时通过微波天线在所有方向上垂直于微波运动的方向上辐射微波 所以没有微波功率被提供到膜形成空间以发起等离子体中的空间，由此该膜是构成暴露于等离子体的侧壁的连续移动的带状部件的表面上的沉积。 因此描述了用于执行该方法的装置。
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