Electrophotographic light-receiving member
    4.
    发明公开
    Electrophotographic light-receiving member 失效
    元素。

    公开(公告)号:EP0616260A2

    公开(公告)日:1994-09-21

    申请号:EP94103893.7

    申请日:1994-03-14

    IPC分类号: G03G5/082

    CPC分类号: G03G5/08214 G03G5/08221

    摘要: To provide an electrophotographic light-receiving member having a good initial-stage electrophotographic performance and also having a good durability especially in an environment of low humidity, the light-receiving member comprises a support 101, a photoconductive layer 103 formed on the support and formed of a non-monocrystalline material mainly composed of silicon atoms, and a surface layer 104 formed of a non-monocrystalline material constituted of silicon atoms, carbon atoms, nitrogen atoms and hydrogen atoms in which silicon atoms having at least one bond to a carbon atom are in a percentage of at least 50 atom% based on the whole silicon atoms in the surface layer.

    摘要翻译: 为了提供具有良好初始阶段电子照相性能并且还具有良好耐久性的电子成象受光部件,特别是在低湿度环境下,光接收部件包括支撑体101,形成在支撑体上并形成的光电导层103 主要由硅原子组成的非单晶材料和由硅原子,碳原子,氮原子和氢原子构成的非单晶材料形成的表面层104,其中硅原子与碳原子具有至少一个键 相对于表面层中的全部硅原子为至少50原子%的百分比。

    Electrophotographic light-receiving member
    9.
    发明公开
    Electrophotographic light-receiving member 失效
    电子光接收器。

    公开(公告)号:EP0616260A3

    公开(公告)日:1996-01-10

    申请号:EP94103893.7

    申请日:1994-03-14

    IPC分类号: G03G5/082

    CPC分类号: G03G5/08214 G03G5/08221

    摘要: To provide an electrophotographic light-receiving member having a good initial-stage electrophotographic performance and also having a good durability especially in an environment of low humidity, the light-receiving member comprises a support 101, a photoconductive layer 103 formed on the support and formed of a non-monocrystalline material mainly composed of silicon atoms, and a surface layer 104 formed of a non-monocrystalline material constituted of silicon atoms, carbon atoms, nitrogen atoms and hydrogen atoms in which silicon atoms having at least one bond to a carbon atom are in a percentage of at least 50 atom% based on the whole silicon atoms in the surface layer.