摘要:
To provide an electrophotographic light-receiving member having a good initial-stage electrophotographic performance and also having a good durability especially in an environment of low humidity, the light-receiving member comprises a support 101, a photoconductive layer 103 formed on the support and formed of a non-monocrystalline material mainly composed of silicon atoms, and a surface layer 104 formed of a non-monocrystalline material constituted of silicon atoms, carbon atoms, nitrogen atoms and hydrogen atoms in which silicon atoms having at least one bond to a carbon atom are in a percentage of at least 50 atom% based on the whole silicon atoms in the surface layer.
摘要:
A method of treating a substrate for an electrophotographic photosensitive member by a process comprises the steps of;
a) cutting the surface of the substrate to remove the surface in the desired thickness; and b) bringing the cut surface of the substrate into contact with water having a temperature of from 5°C to 90°C, having a resistivity of not less than 11 MΩ·cm at 25°C, containing fine particles with a particle diameter of not smaller than 0.2 µm in a quantity of not more than 10,000 particles per milliliter, containing microorganisms in a total viable cell count of not more than 100 per milliliter and containing an organic matter in a quantity of not more than 10 mg per liter, for at least 10 seconds at a pressure of from 1 kg·f/cm² to 300 kg·f/cm².
摘要:
A method for continuously forming a functional deposited film with a large area according to a microwave plasma CVD process is described. The method comprises the steps of continuously traveling a band-shaped member containing a conductive member along its length during which a pillar-shaped film-forming space capable of being kept substantially in vacuum therein is established by the use of the traveling band-shaped member as a side wall for the film-forming space, charging starting gases for film formation through a gas feed means into the film-forming space, and simultaneously radiating a microwave through a microwave antenna in all directions vertical to the direction of movement of the microwave so that microwave power is supplied to the film-forming space to initiate a plasma in the space whereby the film is deposited on the surface of the continuously traveling band-shaped member which constitutes the side wall exposed to the plasma. An apparatus for carrying out the method is also described.
摘要:
A method for continuously forming a functional deposited film with a large area according to a microwave plasma CVD process is described. The method comprises the steps of continuously traveling a band-shaped member containing a conductive member along its length during which a pillar-shaped film-forming space capable of being kept substantially in vacuum therein is established by the use of the traveling band-shaped member as a side wall for the film-forming space, charging starting gases for film formation through a gas feed means into the film-forming space, and simultaneously radiating a microwave through a microwave antenna in all directions vertical to the direction of movement of the microwave so that microwave power is supplied to the film-forming space to initiate a plasma in the space whereby the film is deposited on the surface of the continuously traveling band-shaped member which constitutes the side wall exposed to the plasma. An apparatus for carrying out the method is also described.
摘要:
To provide an electrophotographic light-receiving member having a good initial-stage electrophotographic performance and also having a good durability especially in an environment of low humidity, the light-receiving member comprises a support 101, a photoconductive layer 103 formed on the support and formed of a non-monocrystalline material mainly composed of silicon atoms, and a surface layer 104 formed of a non-monocrystalline material constituted of silicon atoms, carbon atoms, nitrogen atoms and hydrogen atoms in which silicon atoms having at least one bond to a carbon atom are in a percentage of at least 50 atom% based on the whole silicon atoms in the surface layer.
摘要:
A light receiving member comprising a substrate and a light receiving layer disposed on said substrate, said light receiving layer having a stacked structure comprising a plurality of constituent layers each being composed of a non-single crystal material containing silicon atoms as a matrix and at least either hydrogen atoms or halogen atoms, characterized in that said light receiving layer has a region containing at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms at an enhanced concentration distribution in the thickness direction in the vicinity of at least one layer interface of the light receiving layer.