摘要:
A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy the required relationship. Also, disclosed are a semiconductor device manufacturing method, a semiconductor device and a vacuum processing apparatus.
摘要:
The present invention provides: an electrophotographic photosensitive member which has a photoconductive layer, an intermediate layer and a surface layer, wherein when the Si+C atom density in the surface layer is represented by D S × 10 22 atoms /cm 3 , the D S is 6.60 or more, and when the maximal value of H/(Si+H) in a distribution of hydrogen quantity in the photoconductive layer in a layer thickness direction is represented by H Pmax , the average value of the H/(Si+H) in the second photoconductive region is represented by H P2 , the D S and the H P2 satisfy the following expression (1) and the D S and the H Pmax satisfy the following expression (2); and an electrophotographic apparatus having the electrophotographic photosensitive member. H P 2 ≥ 0.07 × D S - 0.38 H Pmax ≤ - 0.04 × D S + 0.60
摘要翻译:本发明提供:具有光电导层,中间层和表面层的电子照相感光构件,其中当表面层中的Si + C原子密度以DS×10 22原子/ cm 3表示时,DS为 6.60以上,并且当层厚方向的光导电层中的氢量分布中的H /(Si + H)的最大值由H Pmax表示时,H /(Si + H) 在第二光电导区域由H P2表示,DS和H P2满足以下表达式(1),并且DS和H Pmax满足以下表达式(2); 以及具有电子照相感光构件的电子照相设备。 H P ¢2‰¥0.07×D S - 0.38 H Pmax‰¤-0.04×D S + 0.60
摘要:
A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy the required relationship. Also, disclosed are a semiconductor device manufacturing method, a semiconductor device and a vacuum processing apparatus.
摘要:
The present invention provides an electrophotographic apparatus which suppresses the unevenness of image density, even though the electrophotographic apparatus has no heater for an electrophotographic photosensitive member. For this purpose, the electrophotographic photosensitive member is arranged in the electrophotographic apparatus so that when the electrophotographic photosensitive member is equally divided into two regions in a cylindrical shaft direction, absolute values of a temperature dependence of photosensitive-member characteristics in the two regions are not the same, and when a region out of the two regions which has a smaller absolute value of the temperature dependence of the photosensitive-member characteristics is defined as a first region, and a region which has a larger absolute value of the temperature dependence of the photosensitive-member characteristics is defined as a second region, the change of a surface temperature of the first region becomes larger than the change of a surface temperature of the second region when an image is formed by the electrophotographic apparatus.
摘要:
The present invention provides an electrophotographic apparatus which suppresses the unevenness of image density, even though the electrophotographic apparatus has no heater for an electrophotographic photosensitive member. For this purpose, the electrophotographic photosensitive member is arranged in the electrophotographic apparatus so that when the electrophotographic photosensitive member is equally divided into two regions in a cylindrical shaft direction, absolute values of a temperature dependence of photosensitive-member characteristics in the two regions are not the same, and when a region out of the two regions which has a smaller absolute value of the temperature dependence of the photosensitive-member characteristics is defined as a first region, and a region which has a larger absolute value of the temperature dependence of the photosensitive-member characteristics is defined as a second region, the change of a surface temperature of the first region becomes larger than the change of a surface temperature of the second region when an image is formed by the electrophotographic apparatus.
摘要:
The present invention provides an electrophotographic apparatus which suppresses the unevenness of image density, even though the electrophotographic apparatus has no heater for an electrophotographic photosensitive member. For this purpose, the electrophotographic photosensitive member is arranged in the electrophotographic apparatus so that when the electrophotographic photosensitive member is equally divided into two regions in a cylindrical shaft direction, absolute values of a temperature dependence of photosensitive-member characteristics in the two regions are not the same, and when a region out of the two regions which has a smaller absolute value of the temperature dependence of the photosensitive-member characteristics is defined as a first region, and a region which has a larger absolute value of the temperature dependence of the photosensitive-member characteristics is defined as a second region, the change of a surface temperature of the first region becomes larger than the change of a surface temperature of the second region when an image is formed by the electrophotographic apparatus.
摘要:
The present invention provides: an electrophotographic photosensitive member which has a photoconductive layer, an intermediate layer and a surface layer, wherein when the Si+C atom density in the surface layer is represented by D S × 10 22 atoms /cm 3 , the D S is 6.60 or more, and when the maximal value of H/(Si+H) in a distribution of hydrogen quantity in the photoconductive layer in a layer thickness direction is represented by H Pmax , the average value of the H/(Si+H) in the second photoconductive region is represented by H P2 , the D S and the H P2 satisfy the following expression (1) and the D S and the H Pmax satisfy the following expression (2); and an electrophotographic apparatus having the electrophotographic photosensitive member. H P 2 ≥ 0.07 × D S - 0.38 H Pmax ≤ - 0.04 × D S + 0.60