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1.发明公开Method and apparatus for vacuum processing, semiconductor device manufacturing method and semiconductor device 审中-公开用于真空处理，制造半导体装置及半导体装置的方法的方法和装置
公开(公告)号：EP1215710A3
公开(公告)日：2014-10-15
申请号：EP01129556.5
申请日：2001-12-11
发明人： Aoki, Makoto , Shirasuna, Toshiyasu , Niino, Hiroaki , Akiyama, Kazuyoshi , Murayama, Hitoshi , Tsuchida, Shinji , Tazawa, Daisuke , Abe, Yukihiro
CPC分类号： H01J37/32174 , G03G5/08278 , H01J37/32082 , H01J37/32165 , H01J37/32183 , H01J37/32568
摘要： A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy the required relationship. Also, disclosed are a semiconductor device manufacturing method, a semiconductor device and a vacuum processing apparatus.
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2.发明授权
公开(公告)号：EP2148245B1
公开(公告)日：2013-11-06
申请号：EP09166177.7
申请日：2009-07-23
CPC分类号： G03G13/22 , G03G5/08235 , G03G5/144 , G03G5/14704
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3.发明授权
公开(公告)号：EP2322993B1
公开(公告)日：2017-01-11
申请号：EP10191359.8
申请日：2010-11-16
CPC分类号： G03G5/08235 , G03G5/0433 , G03G5/144 , G03G5/14704
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4.发明公开Method and apparatus for vacuum processing, semiconductor device manufacturing method and semiconductor device 审中-公开用于真空处理，制造半导体装置及半导体装置的方法的方法和装置
公开(公告)号：EP1215710A2
公开(公告)日：2002-06-19
申请号：EP01129556.5
申请日：2001-12-11
发明人： Aoki, Makoto , Shirasuna, Toshiyasu , Niino, Hiroaki , Akiyama, Kazuyoshi , Murayama, Hitoshi , Tsuchida, Shinji , Tazawa, Daisuke , Abe, Yukihiro
IPC分类号： H01J37/32
CPC分类号： H01J37/32174 , G03G5/08278 , H01J37/32082 , H01J37/32165 , H01J37/32183 , H01J37/32568
摘要： A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy the required relationship. Also, disclosed are a semiconductor device manufacturing method, a semiconductor device and a vacuum processing apparatus.
摘要翻译： 在反应容器中待处理的真空处理方法，包括物品的放置和同时供给具有不同频率，以相同的高频电极通过引入高频功率，以产生在反应容器等离子体至少两个高频功率 从高频电极的反应容器中。 的频率和提供所述至少两个高频功率的功率值满足所需的关系。 所以，光盘游离缺失是一个半导体器件的制造方法，半导体装置和一个真空处理装置。
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5.发明公开
公开(公告)号：EP2322993A3
公开(公告)日：2012-10-24
申请号：EP10191359.8
申请日：2010-11-16
CPC分类号： G03G5/08235 , G03G5/0433 , G03G5/144 , G03G5/14704
摘要： The present invention provides: an electrophotographic photosensitive member which has a photoconductive layer, an intermediate layer and a surface layer, wherein when the Si+C atom density in the surface layer is represented by D S × 10 22 atoms /cm 3 , the D S is 6.60 or more, and when the maximal value of H/(Si+H) in a distribution of hydrogen quantity in the photoconductive layer in a layer thickness direction is represented by H Pmax , the average value of the H/(Si+H) in the second photoconductive region is represented by H P2 , the D S and the H P2 satisfy the following expression (1) and the D S and the H Pmax satisfy the following expression (2); and an electrophotographic apparatus having the electrophotographic photosensitive member. H P 2 ≥ 0.07 × D S - 0.38 H Pmax ≤ - 0.04 × D S + 0.60
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公开(公告)号：EP2328031A1
公开(公告)日：2011-06-01
申请号：EP10192337.3
申请日：2010-11-24
CPC分类号： G03G5/0433 , G03G5/0507 , G03G5/08242 , G03G5/14704
摘要： The present invention provides an electrophotographic photosensitive member including a photoconductive layer, an intermediate layer made of hydrogenated amorphous silicon carbide on the photoconductive layer, and a surface layer made of hydrogenated amorphous silicon carbide on the intermediate layer, wherein a ratio (C/(Si+C); C2) in the surface layer is 0.61 to 0.75, and a sum of atom density of silicon and carbon is 6.60 × 10 22 atoms/cm 3 or more, a ratio (C/(Si+C); C1) and a sum (D1) of atom density of silicon and carbon in the intermediate layer increase continuously from the photoconductive layer toward the surface layer without exceeding C2 and D2, and the intermediate layer has a continuous region in which C1 is 0.25 to C2 while D1 is 5.50 × 10 22 to 6.45 × 10 22 atoms/cm 3 , the region being 150 nm or larger in a layer thickness direction, and an electrophotographic apparatus equipped therewith.
摘要翻译： 本发明提供一种电子照相感光构件，其包含光导电层，在光电导层上由氢化非晶碳化硅制成的中间层，以及在中间层上由氢化非晶碳化硅制成的表面层，其中（C /（Si + C）; C2）为0.61〜0.75，硅与碳的原子密度之和为6.60×10 22原子/ cm 3以上，（C /（Si + C）：C1） 并且中间层中的硅和碳的原子密度之和（D1）不再超过C2和D2而从光电导层向表面层连续增加，并且中间层具有C1为0.25至C2的连续区域，而D1 是5.50×10 22至6.45×10 22原子/ cm 3，该区域在层厚度方向上为150nm或更大，以及配备有该电子照相设备。
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7.发明授权
公开(公告)号：EP2328031B1
公开(公告)日：2016-09-14
申请号：EP10192337.3
申请日：2010-11-24
CPC分类号： G03G5/0433 , G03G5/0507 , G03G5/08242 , G03G5/14704
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公开(公告)号：EP2322993A2
公开(公告)日：2011-05-18
申请号：EP10191359.8
申请日：2010-11-16
CPC分类号： G03G5/08235 , G03G5/0433 , G03G5/144 , G03G5/14704
摘要： The present invention provides: an electrophotographic photosensitive member which has a photoconductive layer, an intermediate layer and a surface layer, wherein when the Si+C atom density in the surface layer is represented by D S × 10 22 atoms /cm 3 , the D S is 6.60 or more, and when the maximal value of H/(Si+H) in a distribution of hydrogen quantity in the photoconductive layer in a layer thickness direction is represented by H Pmax , the average value of the H/(Si+H) in the second photoconductive region is represented by H P2 , the D S and the H P2 satisfy the following expression (1) and the D S and the H Pmax satisfy the following expression (2); and an electrophotographic apparatus having the electrophotographic photosensitive member. H P 2 ≥ 0.07 × D S - 0.38 H Pmax ≤ - 0.04 × D S + 0.60
摘要翻译： 本发明提供：具有光电导层，中间层和表面层的电子照相感光构件，其中当表面层中的Si + C原子密度以DS×10 22原子/ cm 3表示时，DS为 6.60以上，并且当层厚方向的光导电层中的氢量分布中的H /（Si + H）的最大值由H Pmax表示时，H /（Si + H） 在第二光电导区域由H P2表示，DS和H P2满足以下表达式（1），并且DS和H Pmax满足以下表达式（2）; 以及具有电子照相感光构件的电子照相设备。 H P ¢2‰¥0.07×D S - 0.38 H Pmax‰¤-0.04×D S + 0.60
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公开(公告)号：EP2148245A1
公开(公告)日：2010-01-27
申请号：EP09166177.7
申请日：2009-07-23
CPC分类号： G03G13/22 , G03G5/08235 , G03G5/144 , G03G5/14704
摘要： In an electrophotographic photosensitive member having a photoconductive layer and, provided on the photoconductive layer, a surface layer constituted of a hydrogenated amorphous silicon carbide, the ratio of the number of atoms of carbon atoms (C) to the sum of the number of atoms of silicon atoms (Si) and number of atoms of carbon atoms (C), C/(Si+C), in the surface layer is from 0.61 or more to 0.75 or less, and the sum of atom density of the silicon atoms and atom density of the carbon atoms in the surface layer is 6.60×10 22 atom/cm 3 or more.
摘要翻译： 在具有光电导层并且在光电导层上设置由氢化非晶碳化硅构成的表面层的电子照相感光构件中，碳原子数（C）与原子数之和的比例 表面层中的硅原子（Si）和碳原子数（C），C /（Si + C）的含量为0.61以上至0.75以下，硅原子和原子的原子密度之和 表面层中的碳原子的密度为6.60×10 22原子/ cm 3以上。
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