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    Multi-electron beam exposure method and apparatus
    5.
    发明公开
    Multi-electron beam exposure method and apparatus 审中-公开
    Verfahren und Apparat zur Mehrfach-Elektronenstrahlbelichtung

    公开(公告)号：EP1387389A2

    公开(公告)日：2004-02-04

    申请号：EP03016314.1

    申请日：2003-07-18

    申请人： Hitachi, Ltd. ,  CANON KABUSHIKI KAISHA ,  Advantest Corporation

    发明人： Yoda, Haruo ,  Souda, Yasunari, Hitachi, Ltd. ,  Ohta, Hiroya, Hitachi, Ltd. ,  Yui, Yoshikiyo ,  Hashimoto, Shinichi

    IPC分类号： H01J37/317

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/31764 ,  H01J2237/31767

    摘要： The dimension of the main field as a unit region for exposure is set to an integral submultiple of the arrangement pitch of the LSI to be exposed, by the control computer 62, and the exposure data stored in the form associated with electron beams from a data generation circuit 64 is limited to one-chip data alone in units of a stripe. This data is repeatedly read out to write the stripe. Further, a storage circuit 66 is provided to store the exposure data by means of a double buffer memory unit for each electron beam. While LSI is written according to one of the buffers, the next exposure stripe data is prepared on the other buffer, thereby bringing about a substantial reduction in the required speed of the exposure data generation circuit.

    摘要翻译： 作为曝光的单位区域的主场的尺寸被控制计算机62设定为要暴露的LSI的排列间距的整数倍，并且以与数据相关联的形式存储的曝光数据 发生电路64仅以条形为单位限于单芯片数据。 该数据被重复读出以写入条带。 此外，提供存储电路66以通过用于每个电子束的双缓冲存储器单元来存储曝光数据。 当根据其中一个缓冲器写入LSI时，在另一个缓冲器上准备下一个曝光条纹数据，从而显着降低曝光数据产生电路的所需速度。

    Charged particle beam exposure apparatus and device manufacturing method using same
    7.
    发明公开
    Charged particle beam exposure apparatus and device manufacturing method using same 有权
    Ladungsträgerteilchenstrahl曝光装置和用于制造器件的方法及其应用

    公开(公告)号：EP1253619A3

    公开(公告)日：2007-11-14

    申请号：EP02252818.6

    申请日：2002-04-22

    申请人： CANON KABUSHIKI KAISHA ,  Hitachi Ltd. ,  ADVANTEST CORPORATION

    发明人： Muraki, Masato ,  Sohda, Yasunari, Hitachi, Ltd., I.P.G ,  Hashimoto, Shinichi

    IPC分类号： H01J37/04 ,  H01J37/317

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3177 ,  H01J2237/0437 ,  H01J2237/31774

    摘要： A high-precision multi-charged-particle-beam exposure apparatus is provided without increasing the performance of a reduction electron optical system. The multi-charged-particle-beam exposure apparatus includes a charged particle source (ES) for emitting a charged particle beam, an aperture array (AA) obtained by arranging a plurality of apertures that divide the charged particle beam from the charged particle source (ES) into a plurality of charged particle beams, a lens array (LA) obtained by arranging a plurality of electron lens for forming a plurality of intermediate images of the charged particle source (ES) on substantially one plane with the plurality of charged particle beams from the aperture array (AA), a blanker array (BA) located on the plane where the plurality of intermediate images are to be formed and having a plurality of blankers, and a reduction electron optical system for reducing and projecting the images of the charged particle source (ES) onto a substrate.

    Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus
    10.
    发明公开
    Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus 有权
    Deflektor，Verfahren zur Herstellung des Deflektors und Belichtungsvorrichtung mit geladenem Teilchenstrahl

    公开(公告)号：EP2555219A1

    公开(公告)日：2013-02-06

    申请号：EP12190098.9

    申请日：2003-10-01

    申请人： Canon Kabushiki Kaisha ,  Hitachi, Ltd.

    发明人： Iwasaki, Yuichi ,  Muraki, Masato ,  Tamomori, Kenji ,  Asano, Kouji ,  Esashi, Masayoshi ,  Nakayama, Yoshinori ,  Hashimoto, Shinichi ,  Moro, Yoshiaki

    IPC分类号： H01J37/147 ,  H01J9/02 ,  H01J37/30 ,  H01J37/04 ,  H01J37/317

    CPC分类号： H01J37/045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/1477 ,  H01J37/3174 ,  H01J2237/0437 ,  H01J2237/31774

    摘要： A deflector which deflects a charged particle beam includes a substrate (1202) in which an opening (200), through which the charged particle beam should pass, is formed, a first deflection electrode (1204a) and second deflection electrode (1204b) which oppose each other in the opening to deflect the charged particle beam, and a first insulating layer (1208a) and second insulating layer (1208b) which are formed between said substrate and said first deflection electrode and between said substrate and said second deflection electrode, respectively. In a direction substantially perpendicular to a direction from the first deflection electrode to the second deflection electrode and an irradiation direction of the charged particle beam, a length of each of the first and second insulating layers is smaller than a length of each of the first and second deflection electrodes so as to shield the first and second insulating layers from the charged particle beam by the first and second deflection electrodes, respectively.

    摘要翻译： 使带电粒子束偏转的偏转器包括形成有带电粒子束通过的开口（200）的基板（1202），形成与第一偏转电极（1204a）和第二偏转电极（1204b）相对的第一偏转电极 在所述开口中彼此偏转所述带电粒子束;以及第一绝缘层（1208a）和第二绝缘层（1208b），其分别形成在所述基板和所述第一偏转电极之间以及所述基板和所述第二偏转电极之间。 在大致垂直于从第一偏转电极到第二偏转电极的方向以及带电粒子束的照射方向的方向上，第一和第二绝缘层的长度小于第一和第二偏转电极的长度， 第二偏转电极，以分别由第一和第二偏转电极屏蔽带电粒子束的第一和第二绝缘层。