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公开(公告)号：EP1451875A2
公开(公告)日：2004-09-01
申请号：EP02801106.2
申请日：2002-12-09
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14676 , H01L31/18
摘要： The invention concerns a method for producing an imaging device comprising at least a pixel matrix made of a photon-sensing semiconductor material (43) deposited on a substrate incorporating electronic devices and having metallic surfaces (42), wherein, prior to depositing the semiconductor material (43) on said substrate, a material designed to promote adherence of the semiconductor material is deposited solely on the metallic surfaces (42) of said substrate.
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2.发明公开PROCEDE DE FABRICATION DE SEMI-CONDUCTEURS EN COUCHES MINCES A BASE DE COMPOSES I-III-VI sb 2 /sb , POUR APPLICATIONS PHOTOVOLTAIQUES 有权用于生产薄膜半导体基于I-III-VI（2）的化合物，用于光伏应用
公开(公告)号：EP1500146A1
公开(公告)日：2005-01-26
申请号：EP03747464.0
申请日：2003-04-23
发明人： TAUNIER, Stéphane , KERREC, Olivier , MAHE, Michel , GUIMARD, Denis , BEN-FARAH, Mo[z , LINCOT, Daniel , GUILLEMOLES, Jean-François , GRAND, Pierre, Philippe , COWACHE, Pierre , VEDEL, Jacques
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/0322 , H01L31/1864 , H01L31/1872 , Y02E10/541 , Y02P70/521
摘要： The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.
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公开(公告)号：EP1451875B1
公开(公告)日：2006-10-25
申请号：EP02801106.2
申请日：2002-12-09
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14676 , H01L31/18
摘要： The invention concerns a method for producing an imaging device comprising at least a pixel matrix made of a photon-sensing semiconductor material (43) deposited on a substrate incorporating electronic devices and having metallic surfaces (42), wherein, prior to depositing the semiconductor material (43) on said substrate, a material designed to promote adherence of the semiconductor material is deposited solely on the metallic surfaces (42) of said substrate.
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