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1.发明公开HIGH-GAIN WIDE BANDGAP DARLINGTON TRANSISTORS AND RELATED METHODS OF FABRICATION 审中-公开高增益宽带隙和相关方法达林顿晶体管
公开(公告)号：EP2454751A1
公开(公告)日：2012-05-23
申请号：EP10742052.3
申请日：2010-07-15
申请人： Cree, Inc.
发明人： ZHANG, Qingchun , AGARWAL, Anant K.
IPC分类号： H01L21/82 , H01L27/082 , H01L29/73
摘要： A packaged power electronic device includes a wide bandgap bipolar driver transistor having a base, a collector, and an emitter terminal, and a wide bandgap bipolar output transistor having a base, a collector, and an emitter terminal. The collector terminal of the output transistor is coupled to the collector terminal of the driver transistor, and the base terminal of the output transistor is coupled to the emitter terminal of the driver transistor to provide a Darlington pair. An area of the output transistor is at least 3 times greater than an area of the driver transistor in plan view. For example, an area ratio of the output transistor to the driver transistor may be between about 3:1 to about 5:1. Related devices and methods of fabrication are also discussed.
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2.发明授权POWER SEMICONDUCTOR DEVICES WITH MESA STRUCTURES AND BUFFER LAYERS INCLUDING MESA STEPS 有权与台面结构层和缓冲层MESA标准水平功率半导体装置
公开(公告)号：EP2208230B1
公开(公告)日：2015-10-21
申请号：EP08846287.4
申请日：2008-09-08
申请人： Cree, Inc.
发明人： ZHANG, Qingchun , AGARWAL, Anant K.
CPC分类号： H01L29/73 , H01L29/0661 , H01L29/0804 , H01L29/1608 , H01L29/66068 , H01L29/732
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3.发明授权SILICON CARBIDE BIPOLAR JUNCTION TRANSISTORS HAVING EPITAXIAL BASE REGIONS AND MULTILAYER EMITTERS AND METHODS OF FABRICATING THE SAME 有权具有产生外延基区和多层发射极AND PROCESS碳化硅双极结型晶体管
公开(公告)号：EP1938384B1
公开(公告)日：2014-08-20
申请号：EP06787147.5
申请日：2006-07-11
申请人： Cree, Inc.
IPC分类号： H01L29/732 , H01L21/04
CPC分类号： H01L29/66068 , H01L29/0804 , H01L29/1004 , H01L29/1608 , H01L29/732
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公开(公告)号：EP2454751B1
公开(公告)日：2020-04-08
申请号：EP10742052.3
申请日：2010-07-15
申请人： Cree, Inc.
发明人： ZHANG, Qingchun , AGARWAL, Anant K.
IPC分类号： H01L21/82 , H01L27/082 , H01L29/73 , H01L29/16
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5.发明公开
公开(公告)号：EP1974387A1
公开(公告)日：2008-10-01
申请号：EP07718354.9
申请日：2007-01-08
申请人： CREE, INC.
发明人： RYU, Sei-Hyung , AGARWAL, Anant K. , WARD, Allan
IPC分类号： H01L29/06
CPC分类号： H01L29/0619 , H01L21/0445 , H01L23/3192 , H01L29/0615 , H01L29/063 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/872 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings (34) in a silicon carbide layer that at least partially surround a silicon carbide-based junction, an insulating layer on the floating guard rings, and a silicon carbide surface charge compensation region (38) between the floating guard rings and adjacent the surface of the silicon carbide layer. A silicon nitride layer (56) is on the silicon carbide layer, and an organic protective layer (66) is on the silicon nitride layer. An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer. Methods of forming edge termination structures are also disclosed.
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公开(公告)号：EP1883972A1
公开(公告)日：2008-02-06
申请号：EP06738330.7
申请日：2006-03-15
申请人： CREE, INC.
发明人： RYU, Sei-Hyung , JENNY, Jason R. , DAS, Mrinal K. , HOBGOOD, Hudson McDonald , AGARWAL, Anant K. , PALMOUR, John W.
CPC分类号： H01L29/74 , H01L29/0661 , H01L29/1608
摘要： High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer. The second region of SiC has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface, opposite the first surface, of the voltage blocking SiC substrate. First, second and third contacts are provided on the first region of SiC, the second region of SiC and the second SiC layer, respectively. Related methods of fabricating high voltage SiC devices are also provided.
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7.发明公开SILICON CARBIDE BIPOLAR JUNCTION TRANSISTORS HAVING EPITAXIAL BASE REGIONS AND MULTILAYER EMITTERS AND METHODS OF FABRICATING THE SAME 有权具有产生外延基区和多层发射极AND PROCESS碳化硅双极结型晶体管
公开(公告)号：EP1938384A1
公开(公告)日：2008-07-02
申请号：EP06787147.5
申请日：2006-07-11
申请人： CREE, INC.
IPC分类号： H01L29/732 , H01L21/04 , H01L29/24
CPC分类号： H01L29/66068 , H01L29/0804 , H01L29/1004 , H01L29/1608 , H01L29/732
摘要： Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the SiC substrate. The epitaxial SiC base region has a first conductivity type. An epitaxial SiC emitter region is also provided on the SiC substrate. The epitaxial SiC emitter region has a second conductivity type, different from the first conductivity type. The epitaxial SiC emitter region has first and second portions. The first portion is provided on the SiC substrate and the second portion is provided on the first portion. The second portion has a higher carrier concentration than the first portion. Related methods of fabricating BJTs are also provided herein.
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8.发明公开
公开(公告)号：EP1882273A2
公开(公告)日：2008-01-30
申请号：EP06750425.8
申请日：2006-04-18
申请人： CREE, INC.
发明人： RYU, Sei-Hyung , JENNY, Jason R. , DAS, Mrinal K. , HOBGOOD, Hudson McDonald , AGARWAL, Anant K. , PALMOUR, John W.
IPC分类号： H01L29/739 , H01L29/06 , H01L29/24 , H01L21/04
CPC分类号： H01L29/7395 , H01L29/1608 , H01L29/66068 , H01L29/66333
摘要： Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided.
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9.发明公开OPTICALLY TRIGGERED WIDE BANDGAP BIPOLAR POWER SWITCHING DEVICES AND CIRCUITS 有权光引发双极性切换功率元件与BIG BAND和距离CIRCUITS
公开(公告)号：EP1880470A1
公开(公告)日：2008-01-23
申请号：EP06759484.6
申请日：2006-05-10
申请人： Cree Inc.
IPC分类号： H03K17/79 , H01L27/144
CPC分类号： H01L29/66068 , H01L21/8213 , H01L27/0825 , H01L29/1608 , H01L31/028 , H01L31/0304 , H01L31/11 , H01L31/1113 , H01L31/167 , H03K17/615 , H03K17/79 , H03K17/7955 , Y10T307/773
摘要： An electronic circuit includes a primarly wide bandgap bipolar power switching device configured to supply a load current in response to a control signal applied to a control terminal thereof, and a driver device configured to generate the control signal. At least one of the primary switching device or the driver device may include an optically triggered switching device. A discrete wide bandgap semiconductor device includes a primary bipolar device stage configured to switch between a conducting state and a nonconducting state upon application of a control current, and a bipolar driver stage configured to generate the control current and to supply the control current to the primary bipolar device stage. At least one of the primary bipolar device stage and the bipolar driver stage may include an optically triggered wide bandgap switching device.
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公开(公告)号：EP2438618B1
公开(公告)日：2020-07-29
申请号：EP10720331.7
申请日：2010-05-21
申请人： Cree, Inc.
IPC分类号： H01L29/739 , H01L27/07 , H01L27/088 , H01L29/78 , H01L29/73 , H01L29/16 , H01L21/82 , H01L25/07
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