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公开(公告)号：EP2980851B1
公开(公告)日：2020-02-26
申请号：EP15176841.3
申请日：2015-07-15
IPC分类号： H01L27/146 , H04N5/217 , H04N5/3745
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公开(公告)号：EP2980851A3
公开(公告)日：2016-08-17
申请号：EP15176841.3
申请日：2015-07-15
IPC分类号： H01L27/146 , H04N5/217 , H04N5/3745
CPC分类号： H04N5/3745 , H01L27/14667 , H04N5/2173
摘要： At least one solid-state image pickup element (1000) includes a plurality of pixels (100) that are arranged in a two-dimensional manner. Each of the plurality of pixels (100) includes a plurality of photoelectric conversion units (PC1, PC2) each including a pixel electrode (303), a photoelectric conversion layer (305) disposed on the pixel electrode (303), and a counter electrode (307) disposed such that the photoelectric conversion layer (305) is sandwiched between the pixel electrode (303) and the counter electrode (307). In one or more embodiments, each of the plurality of pixels also includes a microlens (309) disposed on the plurality of photoelectric conversion units (PC1, PC2).
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公开(公告)号：EP2980852B1
公开(公告)日：2019-11-27
申请号：EP15176842.1
申请日：2015-07-15
IPC分类号： H01L27/146 , H04N5/369
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4.发明授权SOLID STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID STATE IMAGING DEVICE, AND IMAGING SYSTEM 有权固态成像装置，固态成像装置的制造方法以及成像系统
公开(公告)号：EP3096355B1
公开(公告)日：2018-03-14
申请号：EP16170126.3
申请日：2016-05-18
IPC分类号： H01L27/146
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H04N5/378
摘要： A manufacturing method of a solid state imaging device according to one embodiment includes the steps of forming, on a substrate, a gate electrode of a first transistor and a gate electrode of a second transistor adjacent to the first transistor; forming an insulator film covering the gate electrode of the first transistor and the gate electrode of the second transistor such that a void is formed between the gate electrode of the first transistor and the gate electrode of the second transistor; forming a film on the insulator film; and forming a light shielding member by removing a part of the film by an etching.
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5.发明公开SOLID STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID STATE IMAGING DEVICE, AND IMAGING SYSTEM 有权FESTZUSTANDSBILDGEBUNGSVORRICHTUNG，HERSTELLUNGSVERFAHRENFÜREINE FESTZUSTANDSBILDGEBUNGSVORRICHTUNG UND BILDGEBUNGSSYSTEM
公开(公告)号：EP3096355A1
公开(公告)日：2016-11-23
申请号：EP16170126.3
申请日：2016-05-18
IPC分类号： H01L27/146
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H04N5/378
摘要： A manufacturing method of a solid state imaging device according to one embodiment includes the steps of forming, on a substrate, a gate electrode of a first transistor and a gate electrode of a second transistor adjacent to the first transistor; forming an insulator film covering the gate electrode of the first transistor and the gate electrode of the second transistor such that a void is formed between the gate electrode of the first transistor and the gate electrode of the second transistor; forming a film on the insulator film; and forming a light shielding member by removing a part of the film by an etching.
摘要翻译： 根据一个实施例的固态成像装置的制造方法包括以下步骤：在衬底上形成与第一晶体管相邻的第一晶体管的栅电极和第二晶体管的栅电极; 形成覆盖第一晶体管的栅电极和第二晶体管的栅电极的绝缘膜，使得在第一晶体管的栅电极和第二晶体管的栅电极之间形成空隙; 在绝缘膜上形成膜; 以及通过蚀刻去除一部分膜而形成遮光构件。
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6.发明公开SOLID-STATE IMAGE SENSING ELEMENT AND IMAGING SYSTEM 审中-公开FESTKÖRPERBILDGEBUNGSELEMENTUND BILDGEBUNGSSYSTEM
公开(公告)号：EP2980852A1
公开(公告)日：2016-02-03
申请号：EP15176842.1
申请日：2015-07-15
IPC分类号： H01L27/146
摘要： Each of a plurality of pixels (100) arranged in two dimensions includes a photoelectric conversion unit including a pixel electrode (303), a photoelectric conversion layer (305) provided above the pixel electrode, and a counter electrode (307) provided so as to sandwich the photoelectric conversion layer between the counter electrode and the pixel electrode, and a microlens (309) arranged above the photoelectric conversion unit. The plurality of pixels includes a first pixel (IP) and a plurality of second pixels (AP). At least either the pixel electrodes of the plurality of second pixels are smaller than the pixel electrode of the first pixel or the counter electrodes of the plurality of second pixels are smaller than the counter electrode of the first pixel, and a configuration between the counter electrode and the microlens of the first pixel is the same as a configuration between the counter electrode and the microlens of each second pixel.
摘要翻译： 以二维布置的多个像素（100）中的每一个包括：光电转换单元，包括像素电极（303），设置在像素电极上方的光电转换层（305）和相对电极（307） 在对电极和像素电极之间夹着光电转换层，以及布置在光电转换单元上方的微透镜（309）。 多个像素包括第一像素（IP）和多个第二像素（AP）。 多个第二像素的像素电极中的至少任一个小于第一像素的像素电极，或者多个第二像素的对置电极小于第一像素的对电极，并且对置电极 并且第一像素的微透镜与每个第二像素的对电极和微透镜之间的配置相同。
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公开(公告)号：EP2980851A2
公开(公告)日：2016-02-03
申请号：EP15176841.3
申请日：2015-07-15
IPC分类号： H01L27/146
CPC分类号： H04N5/3745 , H01L27/14667 , H04N5/2173
摘要： At least one solid-state image pickup element (1000) includes a plurality of pixels (100) that are arranged in a two-dimensional manner. Each of the plurality of pixels (100) includes a plurality of photoelectric conversion units (PC1, PC2) each including a pixel electrode (303), a photoelectric conversion layer (305) disposed on the pixel electrode (303), and a counter electrode (307) disposed such that the photoelectric conversion layer (305) is sandwiched between the pixel electrode (303) and the counter electrode (307). In one or more embodiments, each of the plurality of pixels also includes a microlens (309) disposed on the plurality of photoelectric conversion units (PC1, PC2).
摘要翻译： 至少一个固态图像拾取元件（1000）包括以二维方式布置的多个像素（100）。 多个像素（100）中的每一个包括多个光电转换单元（PC1，PC2），每个光电转换单元包括像素电极（303），设置在像素电极（303）上的光电转换层（305） （307），其设置成使得光电转换层（305）夹在像素电极（303）和对电极（307）之间。 在一个或多个实施例中，多个像素中的每一个还包括设置在多个光电转换单元（PC1，PC2）上的微透镜（309）。
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