-
1.发明授权Red surface emitting laser element, image forming device, and image display apparatus 有权激光元件的表面发射在红色，图像形成装置和图像显示装置
公开(公告)号：EP1959529B1
公开(公告)日：2012-05-16
申请号：EP08002642.0
申请日：2008-02-13
Applicant: Canon Kabushiki Kaisha
Inventor： Takeuchi, Tetsuya , Uchida, Mamoru , Miyamoto, Tomoyuki , Koyama, Fumio
CPC classification number: H01S5/34326 , B82Y20/00 , H01S5/021 , H01S5/1039 , H01S5/18313 , H01S5/18358 , H01S5/2009 , H01S5/2013 , H01S5/2201 , H01S5/3072 , H01S5/3213 , H01S5/3436
-
2.发明公开Red surface emitting laser element, image forming device, and image display apparatus 有权Laserelement mitOberflächenemissionim Roten，Bilderzeugungsvorrichtung und Bildanzeigevorrichtung
公开(公告)号：EP1959529A2
公开(公告)日：2008-08-20
申请号：EP08002642.0
申请日：2008-02-13
Applicant: Canon Kabushiki Kaisha
Inventor： Takeuchi, Tetsuya , Uchida, Mamoru , Miyamoto, Tomoyuki , Koyama, Fumio
CPC classification number: H01S5/34326 , B82Y20/00 , H01S5/021 , H01S5/1039 , H01S5/18313 , H01S5/18358 , H01S5/2009 , H01S5/2013 , H01S5/2201 , H01S5/3072 , H01S5/3213 , H01S5/3436
Abstract: A red surface emitting laser element (3000) includes a first reflector (302), a second reflector (308) including a p-type semiconductor multilayer film, an active layer (305) between the first reflector (302) and the second reflector (308), and a p-type semiconductor spacer layer (307) between the active layer (305) and the second reflector (308), the p-type semiconductor spacer layer (307) having a thickness of 100 nm or more and 350 nm or less.
Abstract translation: 红色表面发射激光元件（3000）包括第一反射器（302），包括p型半导体多层膜的第二反射器（308），在第一反射器（302）和第二反射器（302）之间的有源层（305） 308）和在有源层（305）和第二反射器（308）之间的p型半导体间隔层（307），厚度为100nm以上且350nm的p型半导体间隔层（307） 或更少。
-
3.发明公开Red surface emitting laser element, image forming device, and image display apparatus 有权对于红色发光的表面，图像形成装置和图像显示装置，激光元件
公开(公告)号：EP1959529A3
公开(公告)日：2009-10-07
申请号：EP08002642.0
申请日：2008-02-13
Applicant: Canon Kabushiki Kaisha
Inventor： Takeuchi, Tetsuya , Uchida, Mamoru , Miyamoto, Tomoyuki , Koyama, Fumio
CPC classification number: H01S5/34326 , B82Y20/00 , H01S5/021 , H01S5/1039 , H01S5/18313 , H01S5/18358 , H01S5/2009 , H01S5/2013 , H01S5/2201 , H01S5/3072 , H01S5/3213 , H01S5/3436
Abstract: A red surface emitting laser element (3000) includes a first reflector (302), a second reflector (308) including a p-type semiconductor multilayer film, an active layer (305) between the first reflector (302) and the second reflector (308), and a p-type semiconductor spacer layer (307) between the active layer (305) and the second reflector (308), the p-type semiconductor spacer layer (307) having a thickness of 100 nm or more and 350 nm or less.
-
-
Search Results
3
records
(took 0.013 seconds)
