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    LASERS WITH INGAAS(P) QUANTUM WELLS WITH INDIUM INGAP BARRIER LAYERS WITH REDUCED DECOMPOSITION
    1.
    发明公开
    LASERS WITH INGAAS(P) QUANTUM WELLS WITH INDIUM INGAP BARRIER LAYERS WITH REDUCED DECOMPOSITION 审中-公开
    LASER MIT INGAAS-（P-）QUANTENTÖPFENMIT INDIUM-INGAP-SPERRSCHICHTEN MIT REDUZIERTER ZERSETZUNG

    公开(公告)号：EP2686925A4

    公开(公告)日：2015-04-01

    申请号：EP12757701

    申请日：2012-03-19

    Applicant: FINISAR CORP

    Inventor： JOHNSON RALPH H ,  WADE JEROME K

    IPC: H01S5/34 ,  H01S5/183

    CPC classification number: H01S5/3407 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/18311 ,  H01S5/34313 ,  H01S5/3436 ,  H01S5/34366 ,  H01S5/34373

    Abstract: A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1-xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99.

    Abstract translation: 制备VCSEL的方法可以使用MBE来：在第一镜像区域上生长第一导电区域; 在与第一反射镜区域相反的第一传导区域上生长有源区，包括：（a）生长具有In1-xGaxP（As）的量子阱势垒; （b）生长具有GaP，GaAsP或GaAs中的一种或多种的过渡层; （c）生长具有In1-zGazAsyP1-y的量子阱层; （d）生长另一个过渡层具有GaP，GaAsP或GaAs中的一种或多种; （e）在多个循环中重复过程（a）至（d）; 和（f）生长具有In1-xGaxP（As）的量子阱屏障; 在与第一导电区域相反的有源区上生长第二导电区域，其中：x为0.77至0.50; y范围从0.7到1; z范围为0.7〜0.99。

    Vertical cavity surface emitting laser (vcsel), vcsel array device, optical scanning apparatus, and image forming apparatus
    3.
    发明公开
    Vertical cavity surface emitting laser (vcsel), vcsel array device, optical scanning apparatus, and image forming apparatus 有权
    Vertikalresonator-Oberflächenemissionslaser（VCSEL），VCSEL-Arrayvorrichtung，optischesAbtastgerätund Bilderzeugungsvorrichtung

    公开(公告)号：EP2131458A3

    公开(公告)日：2011-02-09

    申请号：EP09251433.0

    申请日：2009-05-29

    Applicant: Ricoh Company, Ltd.

    Inventor： Kei, Hara ,  Morimasa, Kaminishi

    IPC: H01S5/183 ,  H01S5/343 ,  H01S5/42 ,  H01S5/34 ,  H01S5/32

    CPC classification number: H01S5/18355 ,  B82Y20/00 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/3202 ,  H01S5/3218 ,  H01S5/3404 ,  H01S5/34306 ,  H01S5/3436 ,  H01S5/423

    Abstract: A vertical cavity surface emitting laser (VCSEL) includes a semiconductor substrate, a lower reflecting mirror formed thereon, an active layer formed on the lower reflecting mirror, a selective oxidization layer including a current confined structure, and an upper reflecting mirror. A mesa structure is formed in at least the active layer, selective oxidization layer, and the upper reflecting mirror. The VCSEL emits laser light perpendicularly to the plane of the semiconductor substrate when an electric current flows between an upper electrode and a lower electrode. The semiconductor substrate is inclined with respect to (100) plane, and the active layer includes a quantum well layer having a compressive strain with respect to the substrate, and a spacer layer. The spacer layer has either a compressive strain or a tensile strain with respect to the semiconductor substrate.

    Abstract translation: 垂直腔面发射激光器（VCSEL）包括半导体衬底，形成在其上的下反射镜，形成在下反射镜上的有源层，包括电流限制结构的选择性氧化层和上反射镜。 至少在有源层，选择性氧化层和上反射镜中形成台面结构。 当电流在上电极和下电极之间流动时，VCSEL发射垂直于半导体衬底的平面的激光。 半导体衬底相对于（100）平面倾斜，并且有源层包括相对于衬底具有压缩应变的量子阱层和间隔层。 间隔层相对于半导体衬底具有压缩应变或拉伸应变。

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