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    PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT
    1.
    发明公开
    PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT 审中-公开

    公开(公告)号：EP3525239A1

    公开(公告)日：2019-08-14

    申请号：EP19155367.6

    申请日：2019-02-04

    申请人： CANON KABUSHIKI KAISHA

    发明人： OGAWA, Toshiyuki ,  SATO, Nabuhiko ,  KURIHARA, Masaki ,  WADA, Yoichi

    IPC分类号： H01L27/146

    摘要： A photoelectric conversion apparatus includes a semiconductor layer having a front surface and a back surface and in which a plurality of photoelectric conversion portions is provided between the front surface and the back surface, a wiring structure arranged on the front surface side of the semiconductor layer, a separation portion arranged between the plurality of photoelectric conversion portions and formed by a trench continuing from the back surface, a first light shielding portion arranged above the semiconductor layer on the back surface side so as to overlap the separation portion, and a second light shielding portion arranged above the semiconductor layer on the back surface side so as to face the first light shielding portion via a region located above at least one photoelectric conversion portion among the plurality of photoelectric conversion portions.

    PHOTOELECTRIC CONVERSION DEVICE, RANGING APPARATUS, AND INFORMATION PROCESSING SYSTEM
    3.
    发明公开
    PHOTOELECTRIC CONVERSION DEVICE, RANGING APPARATUS, AND INFORMATION PROCESSING SYSTEM 审中-公开
    光电子公司UMWANDLUNGSVORRICHTUNG，ENTFERNUNGSMESSVORRICHTUNG UND INFORMATIONSVERARBEITUNGSSYSTEM

    公开(公告)号：EP3128342A1

    公开(公告)日：2017-02-08

    申请号：EP16180518.9

    申请日：2016-07-21

    申请人： Canon Kabushiki Kaisha

    发明人： IKEDA, Hajime ,  GODEN, Tatsuhito ,  WADA, Yoichi ,  OTA, Keisuke ,  HASEGAWA, Toshinori

    IPC分类号： G01S7/491 ,  G01S17/89 ,  H01L27/146

    CPC分类号： H01L27/14605 ,  G01S7/4876 ,  G01S7/4914 ,  G01S17/10 ,  G01S17/89 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14641 ,  H01L31/162

    摘要： A photoelectric conversion device (11) includes a first photoelectric conversion portion (301) configured to generate electrons; a second photoelectric conversion portion (302) configured to generate holes; a charge-to-voltage conversion portion (307, 310) including an n-type first semiconductor region (507) configured to collect the generated electrons and a p-type second semiconductor region (510) configured to collect the generated holes, the charge-to-voltage conversion portion being configured to convert a charge that is based on the electrons and the holes to a voltage; and a signal generation portion (315) configured to generate a signal corresponding to the voltage, the signal generation portion including an amplification transistor.

    摘要翻译： 光电转换装置（11）包括被配置为产生电子的第一光电转换部（301） 被配置为产生孔的第二光电转换部分（302） 包括被配置为收集所产生的电子的n型第一半导体区域（507）的电荷 - 电压转换部分（307,310）和被配置为收集所产生的空穴的p型第二半导体区域（510），所述电荷 电压转换部，被配置为将基于电子和空穴的电荷转换为电压; 以及信号生成部（315），被配置为产生与电压对应的信号，所述信号生成部包括放大晶体管。