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公开(公告)号：EP2486588B1
公开(公告)日：2018-07-18
申请号：EP10770882.8
申请日：2010-09-29
IPC分类号： H01L27/146
CPC分类号： H01L27/14806 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/1463 , H04N5/335 , H04N5/359 , H04N5/37452
摘要： A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semiconductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.
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公开(公告)号：EP2486589B1
公开(公告)日：2014-12-31
申请号：EP10775917.7
申请日：2010-10-06
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14689
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公开(公告)号：EP2486590A1
公开(公告)日：2012-08-15
申请号：EP10775918.5
申请日：2010-10-06
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14609
摘要： A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.
摘要翻译： 在P型阱中形成光电转换部分，电荷保持部分，转移部分和感测节点。 电荷保持部分被配置为包括N型半导体区域，该N型半导体区域是在与光电转换部分不同的部分中保持电荷的第一半导体区域。 具有比P型阱更高浓度的P型半导体区域设置在N型半导体区域下方。
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公开(公告)号：EP2486588A1
公开(公告)日：2012-08-15
申请号：EP10770882.8
申请日：2010-09-29
IPC分类号： H01L27/146
CPC分类号： H01L27/14806 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/1463 , H04N5/335 , H04N5/359 , H04N5/37452
摘要： A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semiconductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.
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公开(公告)号：EP2486590B1
公开(公告)日：2013-12-11
申请号：EP10775918.5
申请日：2010-10-06
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14609
摘要： A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.
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6.发明公开
公开(公告)号：EP2486589A1
公开(公告)日：2012-08-15
申请号：EP10775917.7
申请日：2010-10-06
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14689
摘要： A solid-state image pickup device includes a photoelectric conversion portion, a charge holding portion configured to include a first-conductivity-type first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. The charge holding portion includes a control electrode. A second-conductivity-type second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A first-conductivity-type third semiconductor region is disposed under the second semiconductor region. The third semiconductor region is disposed at a deeper position than the first semiconductor region.
摘要翻译： 固态图像拾取装置包括光电转换部分，被配置为包括第一导电型第一半导体区域的电荷保持部分以及被配置为包括传输栅极电极的传输部分，传输栅极电极控制电荷保持部分 和一个感应节点。 电荷保持部分包括控制电极。 第二导电类型的第二半导体区域设置在控制电极和传输栅极电极之间的半导体区域的表面上。 第一导电类型的第三半导体区域设置在第二半导体区域下方。 第三半导体区域设置在比第一半导体区域更深的位置处。
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公开(公告)号：EP2277199A1
公开(公告)日：2011-01-26
申请号：EP09742779.3
申请日：2009-05-07
IPC分类号： H01L27/146 , H04N5/335
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14623 , H04N5/37452 , H04N5/37457
摘要： In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.
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公开(公告)号：EP2274775A1
公开(公告)日：2011-01-19
申请号：EP09729941.6
申请日：2009-04-03
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14643
摘要： A solid-state imaging apparatus includes the carrier holding portion and the amplifying portion in each pixel, wherein a first voltage supplied to a transfer electrode when the transfer portion for transferring carriers from the carrier holding portion to the amplifying portion is placed in a non-conducting state is opposite in polarity to a voltage supplied to the transfer electrode during the turning on period of the transfer portion, and a second voltage supplied to the control electrode of the carrier holding portion during a holding period in which the carriers are retained in the carrier holding portion is the same in polarity as the first voltage and is larger in absolute value than the first voltage.
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公开(公告)号：EP2195844A1
公开(公告)日：2010-06-16
申请号：EP08835419.6
申请日：2008-10-01
发明人： YAMASHITA, Yuichiro
IPC分类号： H01L27/14 , H01L31/0232 , H04N5/335
CPC分类号： H01L27/14629 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L31/02162 , H01L31/0232
摘要： A photoelectric conversion device comprises: a plurality of photoelectric conversion elements each having a photo-sensing surface; insulation films; a plurality of light-guiding portions arranged above the insulation films, each of the plurality of light-guiding portions guiding light on the photo-sensing surface of each of the plurality of photoelectric conversion elements; and boundary portions, each of the boundary portions defines a boundary between the adjacent light-guiding portions and is formed of a material lower in refractive index than a material that forms the plurality of light-guiding portions, wherein a width of each of the boundary portions is not more than half a shortest wavelength in a wavelength range of visible light, and a height from a lower surface to an upper surface of each of the plurality of light-guiding portions is not less than double a longest wavelength in the wavelength range of visible light.
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公开(公告)号：EP3145174B1
公开(公告)日：2019-02-20
申请号：EP16192567.2
申请日：2011-06-24
发明人： FUJIMURA, Masaru , KONO, Shoji , YAMASHITA, Yuichiro , KIKUCHI, Shin , SHIMIZU, Shinichiro , ARISHIMA, Yu
IPC分类号： H04N5/357 , H04N5/3745 , H04N5/32
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