公开(公告)号：EP3493261A2

公开(公告)日：2019-06-05

申请号：EP18209505.9

申请日：2018-11-30

申请人： Brillnics Inc.

发明人： Tanaka, Shunsuke ,  Otaka, Toshinori ,  Akutsu, Takahiro

IPC分类号： H01L27/146

CPC分类号： H04N5/332 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14649 ,  H04N5/37457 ,  H04N9/0451 ,  H04N9/04553

摘要： One object is to provide a solid-state imaging device (10) that can capture visible light images such as RGB images and infrared images such as NIR images and maintain a high light-receiving sensitivity for infrared light, a method of driving such a solid-state imaging device (10), and an electronic apparatus (100). The solid-state imaging device (10) includes: a pixel part (20) having unit pixel groups (200) arranged therein, the unit pixel groups (200) each including a plurality of pixels (PXL11, PXL12, PXL21, PXL22) at least for visible light that perform photoelectric conversion; and a reading part (70) for reading pixel signals from the pixel part (20), wherein the plurality of pixels for visible light have a light-receiving sensitivity for infrared light, and in an infrared reading mode, the reading part (70) is capable of adding together signals for infrared light read from the plurality of pixels for visible light.

公开(公告)号：EP3139592B1

公开(公告)日：2018-09-19

申请号：EP16194589.4

申请日：2013-11-12

申请人： Consejo Superior de Investigaciones Científicas (CSIC)

发明人： SERRANO GOTARREDONA, Teresa ,  LINARES BARRANCO, Bernabé

IPC分类号： H04N5/243 ,  H04N5/335 ,  H04N5/3745

CPC分类号： H04N5/243 ,  H04N5/3355 ,  H04N5/3745 ,  H04N5/37455 ,  H04N5/37457

摘要： The invention relates to a method and a device for detecting the temporal variation of the light intensity in a matrix of photosensors, comprising a matrix of pixels, a block for the automatic adjustment of the amplification of the photocurrent, and an arbitrating and event-encoding block. Each pixel comprises a photosensor that generates a photocurrent, an adjustable gain current mirror connected to the outlet of the photosensor, a transimpedance amplifier arranged at the outlet of the current mirror, optionally at least one amplification circuit arranged at the outlet of the transimpedance amplifier, and capacitors and detectors of thresholds for determining whether the output voltage exceeds a higher threshold or drops below a lower threshold in order to generate an event in the pixel.

公开(公告)号：EP2595191B1

公开(公告)日：2018-09-05

申请号：EP13000767.7

申请日：2009-10-19

申请人： Sony Corporation

发明人： Yanagita, Takeshi ,  Mabuchi, Keiji ,  Ishiwata, Hiroaki

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/353 ,  H04N5/369 ,  H04N5/359 ,  H04N5/374 ,  H04N5/3745

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/3532 ,  H04N5/3591 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/378

摘要： A solid state image sensor includes a pixel array, as well as charge-to-voltage converters (FD1,FD2), reset gates (23), and amplifiers (24) each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply (selecting power supply SELVdd) is set higher than the voltage level of the amplifier power supply (fixed power supply Vdd). Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters (FD1,FD2). The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors (21-1,21-2,21-3,21-4) of the pixels sharing a charge-to-voltage converter (FD1,FD2) with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

公开(公告)号：EP3365916A1

公开(公告)日：2018-08-29

申请号：EP16857900.1

申请日：2016-10-21

申请人： Heptagon Micro Optics Pte. Ltd.

发明人： KÖKLÜ, Gözen ,  BÜTTGEN, Bernhard

IPC分类号： H01L27/14 ,  H04N5/335 ,  G01S7/00 ,  G01C3/00

CPC分类号： G01C3/00 ,  G01S7/4914 ,  H01L27/14 ,  H04N5/37457

摘要： Pixel devices and arrays of pixel devices are operable to demodulate modulated light incident on a photo-detection region of the pixel devices. The pixel devices can include floating diffusion implant layers and transfer gates. The floating diffusion implant layers and transfer gates are disposed such that photo-generated charge carriers can be conducted to the floating diffusion implant layers over minimal charge-carrier transport paths.

公开(公告)号：EP3342155A1

公开(公告)日：2018-07-04

申请号：EP16866625.3

申请日：2016-11-15

申请人： Samsung Electronics Co., Ltd.

发明人： SHIMOKAWA, Shuichi ,  LEE, Sangmin

IPC分类号： H04N5/30 ,  H04N5/33 ,  H04N5/232 ,  H04N5/369

CPC分类号： G02B7/28 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14641 ,  H04N5/232122 ,  H04N5/347 ,  H04N5/37457

摘要： An image sensor according to an embodiment may include a plurality of pixels. Each pixel of the plurality of pixels may include first, second, third and fourth photodiodes configured to convert light into an electric signal, and an electric circuit configured to add at least two of the electrical signals converted respectively by the first, second, third and fourth photodiodes and then output the added signals. An electronic device according to an embodiment may include the image sensor. The image sensor and the electronic device may offer an auto focusing function by controlling signals converted by and outputted from the plurality of photodiodes. Other various embodiments are possible.

公开(公告)号：EP2706911B1

公开(公告)日：2018-07-04

申请号：EP12782104.9

申请日：2012-05-14

申请人： Depuy Synthes Products, Inc.

发明人： BLANQUART, Laurent

IPC分类号： H04N5/335 ,  H01L27/146

CPC分类号： A61B1/051 ,  A61B1/00009 ,  A61B1/0676 ,  H01L24/17 ,  H01L25/0657 ,  H01L27/124 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1469 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L2924/0002 ,  H01L2924/381 ,  H04N5/2256 ,  H04N5/3742 ,  H04N5/37455 ,  H04N5/37457 ,  H04N5/378 ,  H04N5/379 ,  H04N2005/2255 ,  H01L2924/00

摘要： Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed. Embodiments of the above may include systems, methods and processes for staggering ADC or column circuit bumps in a column or sub-column hybrid image sensor using vertical interconnects are also disclosed.

公开(公告)号：EP3275177A4

公开(公告)日：2018-04-18

申请号：EP15897490

申请日：2015-07-09

申请人： HUAWEI TECH CO LTD

发明人： KOBAYASHI ATSUSHI ,  LI JUAN

IPC分类号： H04N5/341 ,  H01L27/146 ,  H04N5/345 ,  H04N5/3745

CPC分类号： H01L27/14625 ,  H01L27/14621 ,  H04N5/332 ,  H04N5/3456 ,  H04N5/37457

摘要： An imaging method, an image sensor and an imaging device (100) are disclosed. The image sensor (110) includes: a filter array (210), a reading circuit (230), a controller (220), a converter (240) and an image output interface (250), the controller (220) is coupled to the reading circuit (230), the converter (240) and the image output interface (250), wherein the filter array (210) comprises a plurality of color filter array patterns, each color filter array pattern comprises multiple-color filters (111) and at least one infrared (IR) filter (112); the multiple-color filters (111) are configured to capture visible rays; the IR filters (112) are configured to capture IR rays; the reading circuit (230) is configured to read out IR signals from the IR filters (112) only or read out IR signals from the IR filters (112) and multiple-color signals from a part of the multiple-color filters (111) under control of the controller (220); the converter (240) is configured to convert the IR signals into IR digital signals under the control of the controller (220); the image output interface (250) is configured to output the IR digital signals under the control of the controller (220).

公开(公告)号：EP3275177A1

公开(公告)日：2018-01-31

申请号：EP15897490.7

申请日：2015-07-09

申请人： Huawei Technologies Co., Ltd.

发明人： KOBAYASHI, Atsushi ,  LI, Juan

IPC分类号： H04N5/341 ,  H01L27/146

CPC分类号： H04N5/332 ,  H01L27/14621 ,  H01L27/14625 ,  H04N5/3456 ,  H04N5/37457 ,  H04N5/378

摘要： An image sensor includes: a filter array, a reading circuit, a controller, a converter and an image output interface, wherein: the controller is coupled to the reading circuit, the converter and the image output interface; the filter array comprises a plurality of color filter array patterns; each color filter array pattern comprises color filters and at least one infrared (IR) filter; the color filters are configured to capture visible rays; the IR filters are configured to capture IR rays; the reading circuit is configured to read out IR signals from the IR filters only or read out IR signals from the IR filters and color signals from a part of the color filters under control of the controller; the converter is configured to convert the IR signals into IR digital signals; the image output interface is configured to output the IR digital signals.

公开(公告)号：EP2800355B1

公开(公告)日：2017-12-20

申请号：EP12863577.8

申请日：2012-12-27

申请人： Fujifilm Corporation

发明人： KURAHASHI, Hidekazu ,  HAYASHI, Kenkichi ,  TANAKA, Seiji ,  KAWAI, Tomoyuki ,  KAWAMURA, Noriko

IPC分类号： H04N5/345 ,  H04N9/07

CPC分类号： H04N9/077 ,  H04N3/1512 ,  H04N5/3458 ,  H04N5/3532 ,  H04N5/37457 ,  H04N9/045 ,  H04N9/083 ,  H04N9/648 ,  H04N2209/045

摘要： A large difference in exposure timing is prevented from arising in cases in which plural pixels have a common amplifier, even when image data is read by thinning. An imaging apparatus (10) includes: an image pickup device (14) including plural photoelectric conversion elements arrayed in first and second directions; an amplification means that treats (K × L) pixels as respective common pixels and amplifies an image capture signal for each of the common pixels; a color filter that is provided with a repeatedly disposed basic array pattern or first and second filters placed in a predetermined pattern of (N × M) pixels; and an image processing section (20) and a drive section (22) that perform charge sweeping by applying sequential shutter pulses to the image pickup device (14) in turn to each pixel, or to each scan line, or to each of plural pixels on a scan line, that read pixel signals of the plural pixels at a set cycle, that, from the read pixel signals, generate line image data of pixels that are arrayed running along the second direction at a cycle of from K pixels to N pixels in the first direction, and that generate image data based on the line image data.

公开(公告)号：EP3228076A1

公开(公告)日：2017-10-11

申请号：EP15801024.9

申请日：2015-11-06

申请人： Qualcomm Incorporated

发明人： HSEIH, Biay-Cheng ,  LUO, Jiafu ,  GOMA, Sergiu, Radu

IPC分类号： H04N5/355 ,  H04N5/3745

CPC分类号： H04N5/363 ,  H04N5/35572 ,  H04N5/35581 ,  H04N5/3559 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/3765 ,  H04N5/378

摘要： Certain aspects relate to systems and techniques for full well capacity extension. For example, a storage capacitor included in the pixel readout architecture can enable multiple charge dumps from a pixel in the analog domain, extending the full well capacity of the pixel. Further, multiple reads can be integrated in the digital domain using a memory, for example DRAM, in communication with the pixel readout architecture. This also can effectively multiply a small pixel's full well capacity. In some examples, multiple reads in the digital domain can be used to reduce, eliminate, or compensate for kTC noise in the pixel readout architecture.

摘要翻译： 某些方面涉及全井扩容的系统和技术。 例如，像素读出架构中包含的存储电容器可以启用来自模拟域中的像素的多个电荷转储，从而扩展像素的全阱容量。 此外，可以使用与像素读出结构通信的存储器（例如DRAM）在数字域中集成多个读取。 这也可以有效地乘以小像素的全部容量。 在一些示例中，可以使用数字域中的多个读取来减少，消除或补偿像素读出体系结构中的kTC噪声。