摘要:
In one aspect, the invention relates to a photovoltaic component (100) comprising at least one first set of photovoltaic nano-cells (101) each comprising one optical nano-antenna having an electromagnetic resonance in a first resonance spectral band, at least one lateral dimension of the optical nano-antenna being subwavelength in size, and comprising a spectral conversion layer (107) allowing at least part of the solar spectrum to be converted to said first resonance spectral band.
摘要:
The invention relates to a method for production of thin layers of semiconductor alloys of the I-III-VI2 type, including sulphur, for photovoltaic applications, whereby a heterostructure is firstly deposited on a substrate comprising a thin layer of precursor I-III-VI2 which is essentially amorphous and a thin layer, including at least some sulphur, the heterostructure is then annealed to promote the diffusion of the sulphur into the precursor layer and the at least partial crystallisation of the I-III-VI2 alloy of the precursor layer with a stoichiometry which hence includes sulphur. A layer of selenium may also be deposited to assist the recrystallisation processes or annealing.
摘要:
A thin-film photovoltaic cell structure with a mirror layer. The invention concerns a photovoltaic cell structure intended for applications in solar panels. The thin-film photovoltaic cell structure comprises at least one layer of I-III-VI2 alloy (CIGS) with photovoltaic properties, for converting an illuminating light into electricity. In particular, the structure comprises at least: - one mirror layer (MR) comprising a reflecting face (FR) for reflecting a portion of the illuminating light, the reflecting face (FR) being opposite a first face (F1) of the layer of I-III-VI2 alloy (CIGS), for receiving, on said first face, a reflected illuminating light, and - one or a plurality of first transparent layers (CA, ENC) transparent to said illuminating light, for receiving an illuminating light transmitted onto a second face (F2) of the layer of I-III-VI2 alloy (CIGS) opposite the first face (F1).
摘要:
One aspect of the invention relates to a photovoltaic component (10) comprising a set of layers suitable for the production of a photovoltaic device, of which at least a first layer (101) is made from a conductive material in order to form a rear electric contact, a second layer (102) is made from a material that is absorbent in the solar spectrum, and a third layer (106) is made from a transparent conductive material in order to form a front electric contact. The component also comprises an electrically insulating layer (103) disposed between the rear electric contact and the front electric contact, said layer being discontinuous such that the layers of the layer assembly can be stacked in one or more areas (100) in order to form a photovoltaic active zone in each of these areas. The component further comprises a layer (104) of conductive material, which is in electric contact with the aforementioned third layer of transparent conductive material and which is structured to form a peripheral electric contact for each of the photovoltaic micro-cells.
摘要:
The invention relates to a method for determining the maximum open circuit voltage (Vco) and the power that can be output by a photoconverter material subject to a measurement light intensity 10, the method including the following steps: measuring the photoluminescent intensity of the material, measuring the absorption rate of the photoconverter material at a second wavelength (λ2) substantially equal to the photoluminescent wavelength of the photoconverter material, determining the maximum open circuit voltage (Vco) of the photoconverter material with the measurement light intensity 10 by means of the absorption rate and the photoluminescent intensity measured at substantially the same wavelength; said invention being characterised in that the light source and the photoconverter material are arranged such that the angular distributions of the rays incident on and emitted by the lit surface of the material and collected by the detector are substantially identical.
摘要:
The invention relates to the regeneration of an electrolysis bath for the production of I-III-VIY compounds in thin layers, where y is approaching 2 and VI is an element including selenium, whereby selenium is regenerated in the form Se(IV) and/or with addition of oxygenated water to reoxidise the selenium in the bath to give the form Se(IV).