公开(公告)号：EP1378935A3

公开(公告)日：2010-12-22

申请号：EP03368066.1

申请日：2003-07-04

申请人： Chartered Semiconductor Manufacturing Pte Ltd.

发明人： Pradeep, Yelehanka Ramachandramurthy ,  Chu, Sanford ,  Ng, Chit Hwei ,  Zheng, Jia Zhen ,  Verma, Purakh

IPC分类号： H01L21/314 ,  H01L21/312

CPC分类号： H01L28/55 ,  H01L21/02109 ,  H01L21/3127 ,  H01L21/3144 ,  H01L21/31625 ,  H01L21/31629 ,  H01L27/0617 ,  H01L27/0629 ,  H01L27/1203 ,  H01L2924/0002 ,  Y10T428/12035 ,  H01L2924/00

摘要： A new method of provided for forming in one plane layers of insulating material having both high and low dielectric constants. Layers, having selected and preferably non-identical parameters of dielectric constants, are successively deposited interspersed with layers of etch stop material. The layers can be etched, creating openings there-through that can be filled with a layer of choice.

公开(公告)号：EP1378935A2

公开(公告)日：2004-01-07

申请号：EP03368066.1

申请日：2003-07-04

申请人： Chartered Semiconductor Manufacturing Pte Ltd.

发明人： Pradeep, Yelehanka Ramachandramurthy ,  Chu, Sanford ,  Ng, Chit Hwei ,  Zheng, Jia Zhen ,  Verma, Purakh

IPC分类号： H01L21/314 ,  H01L21/312

CPC分类号： H01L28/55 ,  H01L21/02109 ,  H01L21/3127 ,  H01L21/3144 ,  H01L21/31625 ,  H01L21/31629 ,  H01L27/0617 ,  H01L27/0629 ,  H01L27/1203 ,  H01L2924/0002 ,  Y10T428/12035 ,  H01L2924/00

摘要： A new method of provided for forming in one plane layers of insulating material having both high and low dielectric constants. Layers, having selected and preferably non-identical parameters of dielectric constants, are successively deposited interspersed with layers of etch stop material. The layers can be etched, creating openings there-through that can be filled with a layer of choice.

摘要翻译： 形成提供用于绝缘具有低介电常数高和材料在一个平面层的新方法。 层，在选择并介电常数优选不相同的参数，依次沉积蚀刻停止材料层交替。 所述层可以被蚀刻，形成开口有通确实可以充满所选择的层。