公开(公告)号：EP2559062B1

公开(公告)日：2015-11-04

申请号：EP11769730.0

申请日：2011-04-15

申请人： Intel Corporation

发明人： NALLA, Ravi, K. ,  AZIMI, Hamid, R. ,  GUZEK, John, S. ,  GONZALEZ, Javier Soto ,  DELANEY, Drew, W.

IPC分类号： H01L21/60 ,  H01L23/48

CPC分类号： H01L23/49822 ,  H01L21/02109 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76897 ,  H01L23/4824 ,  H01L23/498 ,  H01L23/49866 ,  H01L23/5226 ,  H01L23/552 ,  H01L23/645 ,  H01L24/19 ,  H01L24/20 ,  H01L25/16 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/73267 ,  H01L2224/83005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/1206 ,  H01L2924/14 ,  H01L2924/1436 ,  H01L2924/18162 ,  H01L2924/3511 ,  H05K1/185 ,  H05K3/4682 ,  H01L2924/00

公开(公告)号：EP2745309A1

公开(公告)日：2014-06-25

申请号：EP12750679.8

申请日：2012-08-15

申请人： King Abdullah University of Science and Technology

发明人： HUSSAIN, Muhammad M. ,  ROJAS, Jhonathan Prieto

IPC分类号： H01L21/02

CPC分类号： H01L21/30604 ,  H01L21/02005 ,  H01L21/02109 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

公开(公告)号：EP2559062A4

公开(公告)日：2013-10-16

申请号：EP11769730

申请日：2011-04-15

申请人： INTEL CORP

发明人： NALLA RAVI K ,  AZIMI HAMID R ,  GUZEK JOHN S ,  GONZALEZ JAVIER SOTO ,  DELANEY DREW W

IPC分类号： H01L21/60 ,  H01L23/48

CPC分类号： H01L23/49822 ,  H01L21/02109 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76897 ,  H01L23/4824 ,  H01L23/498 ,  H01L23/49866 ,  H01L23/5226 ,  H01L23/552 ,  H01L23/645 ,  H01L24/19 ,  H01L24/20 ,  H01L25/16 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/73267 ,  H01L2224/83005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/1206 ,  H01L2924/14 ,  H01L2924/1436 ,  H01L2924/18162 ,  H01L2924/3511 ,  H05K1/185 ,  H05K3/4682 ,  H01L2924/00

摘要： Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include attaching a die to a carrier material, wherein the carrier material comprises a top layer and a bottom layer separated by an etch stop layer; forming a dielectric material adjacent the die, forming a coreless substrate by building up layers on the dielectric material, and then removing the top layer carrier material and etch stop layer from the bottom layer carrier material.

摘要翻译： 一种结构，包括：嵌入在无芯基板中的管芯，与管芯相邻的电介质材料，设置在管芯的管芯焊盘区域中的管芯焊盘互连结构以及设置在无芯基板内的至少一个功能化载体结构， 所述至少一个官能化载体结构与所述无芯基板的顶表面共面。

公开(公告)号：EP2638565B1

公开(公告)日：2018-05-16

申请号：EP11791014.1

申请日：2011-11-08

申请人： Comptek Solutions Oy

发明人： LANG, Jouko ,  PUNKKINEN, Marko ,  TUOMINEN, Marjukka ,  TUOMINEN, Veikko ,  DAHL, Johnny ,  VÄYRYNEN, Juhani ,  LAUKKANEN, Pekka

IPC分类号： H01L21/316 ,  H01L21/02 ,  H01L21/28 ,  H01L29/20

CPC分类号： H01L29/02 ,  H01L21/02046 ,  H01L21/02109 ,  H01L21/02172 ,  H01L21/02241 ,  H01L21/28264 ,  H01L21/31666 ,  H01L21/3245 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205

摘要： A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

公开(公告)号：EP2638565A1

公开(公告)日：2013-09-18

申请号：EP11791014.1

申请日：2011-11-08

申请人： Turun yliopisto

发明人： LANG, Jouko ,  PUNKKINEN, Marko ,  TUOMINEN, Marjukka ,  TUOMINEN, Veikko ,  DAHL, Johnny ,  VÄYRYNEN, Juhani ,  LAUKKANEN, Pekka

IPC分类号： H01L21/316 ,  H01L21/02

CPC分类号： H01L29/02 ,  H01L21/02046 ,  H01L21/02109 ,  H01L21/02172 ,  H01L21/02241 ,  H01L21/28264 ,  H01L21/31666 ,  H01L21/3245 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205

摘要： A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

公开(公告)号：EP2559062A2

公开(公告)日：2013-02-20

申请号：EP11769730.0

申请日：2011-04-15

申请人： Intel Corporation

发明人： NALLA, Ravi, K. ,  AZIMI, Hamid, R. ,  GUZEK, John, S. ,  GONZALEZ, Javier Soto ,  DELANEY, Drew, W.

IPC分类号： H01L21/60 ,  H01L23/48

CPC分类号： H01L23/49822 ,  H01L21/02109 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76897 ,  H01L23/4824 ,  H01L23/498 ,  H01L23/49866 ,  H01L23/5226 ,  H01L23/552 ,  H01L23/645 ,  H01L24/19 ,  H01L24/20 ,  H01L25/16 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/73267 ,  H01L2224/83005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/1206 ,  H01L2924/14 ,  H01L2924/1436 ,  H01L2924/18162 ,  H01L2924/3511 ,  H05K1/185 ,  H05K3/4682 ,  H01L2924/00

摘要： Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include attaching a die to a carrier material, wherein the carrier material comprises a top layer and a bottom layer separated by an etch stop layer; forming a dielectric material adjacent the die, forming a coreless substrate by building up layers on the dielectric material, and then removing the top layer carrier material and etch stop layer from the bottom layer carrier material.

公开(公告)号：EP1378935A3

公开(公告)日：2010-12-22

申请号：EP03368066.1

申请日：2003-07-04

申请人： Chartered Semiconductor Manufacturing Pte Ltd.

发明人： Pradeep, Yelehanka Ramachandramurthy ,  Chu, Sanford ,  Ng, Chit Hwei ,  Zheng, Jia Zhen ,  Verma, Purakh

IPC分类号： H01L21/314 ,  H01L21/312

CPC分类号： H01L28/55 ,  H01L21/02109 ,  H01L21/3127 ,  H01L21/3144 ,  H01L21/31625 ,  H01L21/31629 ,  H01L27/0617 ,  H01L27/0629 ,  H01L27/1203 ,  H01L2924/0002 ,  Y10T428/12035 ,  H01L2924/00

摘要： A new method of provided for forming in one plane layers of insulating material having both high and low dielectric constants. Layers, having selected and preferably non-identical parameters of dielectric constants, are successively deposited interspersed with layers of etch stop material. The layers can be etched, creating openings there-through that can be filled with a layer of choice.

公开(公告)号：EP1378935A2

公开(公告)日：2004-01-07

申请号：EP03368066.1

申请日：2003-07-04

申请人： Chartered Semiconductor Manufacturing Pte Ltd.

发明人： Pradeep, Yelehanka Ramachandramurthy ,  Chu, Sanford ,  Ng, Chit Hwei ,  Zheng, Jia Zhen ,  Verma, Purakh

IPC分类号： H01L21/314 ,  H01L21/312

CPC分类号： H01L28/55 ,  H01L21/02109 ,  H01L21/3127 ,  H01L21/3144 ,  H01L21/31625 ,  H01L21/31629 ,  H01L27/0617 ,  H01L27/0629 ,  H01L27/1203 ,  H01L2924/0002 ,  Y10T428/12035 ,  H01L2924/00

摘要： A new method of provided for forming in one plane layers of insulating material having both high and low dielectric constants. Layers, having selected and preferably non-identical parameters of dielectric constants, are successively deposited interspersed with layers of etch stop material. The layers can be etched, creating openings there-through that can be filled with a layer of choice.

摘要翻译： 形成提供用于绝缘具有低介电常数高和材料在一个平面层的新方法。 层，在选择并介电常数优选不相同的参数，依次沉积蚀刻停止材料层交替。 所述层可以被蚀刻，形成开口有通确实可以充满所选择的层。